AGERE C8 C1 Search Results

tns capacitors

Abstract: capacitor F3 037 02 100B120FW500X
Contextual Info: Preliminary Data Sheet June 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor

AGR045010

Abstract: AGRA10E AGRA10EU JESD22-C101A RF MOSFET CLASS AB
Contextual Info: Preliminary Data Sheet February 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor

ATC100B101JW500X

Abstract: 08055C103KATMA AGRA10XM cdm 316 JESD22-C101A ATC100B1R0BW500
Contextual Info: Preliminary Data Sheet August 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Device Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for personal cellular band IS-95 865 MHz to

AGRA10E

Abstract: AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors
Contextual Info: Preliminary Data Sheet January 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable

MOSFET J162

Abstract: j162 MOSFET J147
Contextual Info: Preliminary Data Sheet August 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz

0203S

Abstract: AGRA10XM JESD22-C101A J162 j507 MOSFET J147
Contextual Info: Preliminary Data Sheet April 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz

ATC100B101JW500X

Abstract: ATC100B1R0BW500X C1206104K5RAC GRM43-2X7R10 AGRA10GM JESD22-C101A c.d.m. technology avx 2743019446 AVX Manufacture Label MA4853
Contextual Info: Preliminary Data Sheet September 2004 AGRA10GM Plastic Overmold 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Device Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS plastic overmold RF power

TRANSISTOR J477

Abstract: krc 118 048 J477 mosfet krc 118 056 J493 TRANSISTOR J477 71 302 zl TRANSISTOR J477 48 Fair-Rite ATC J56-1
Contextual Info: Preliminary Data Sheet April 2003 AGR21010E 10 W, 2000 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21010E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular, personal communications system (PCS), digital communication system (DCS), and

MOSFET J162

Abstract: J473 MOSFET J147
Contextual Info: Preliminary Data Sheet March 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz

140-A525-SMD

Abstract: Z1 SMD agere c8 c1 atc600 AGRB03GM JESD22-C101A Sprague Electric SMD MOSFET N Z4 agere c8 vj1206y223kxa
Contextual Info: Preliminary Data Sheet November 2004 AGRB03GM 3 W, 100 MHz—2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRB03GM is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor

Z9 TRANSISTOR SMD

Abstract: AGR18045E JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8
Contextual Info: Preliminary Data Sheet November 2004 AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

Contextual Info: Preliminary Data Sheet October 2003 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

TH 2190 HOT Transistor

Contextual Info: Preliminary Data Sheet November 2003 AGR21180E 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

"RF Power Amplifier"

Abstract: 100B100JCA500X AGR18060E AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-C101A 100B8R2JCA500X
Contextual Info: Preliminary Data Sheet April 2004 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

J307 FET

Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386
Contextual Info: Preliminary Data Sheet April 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

AGR09090EF

Abstract: JESD22-C101A ZX18 grm40x7r103k100al
Contextual Info: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution

100B120JW500X

Abstract: grm40x7r103k100al 100B470JW500X 100B100JW500X
Contextual Info: Preliminary Data Sheet December 2003 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution

Contextual Info: Preliminary Data Sheet December 2003 AGR09090EF 90 W, 921 MHz—960 MHz, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution

Contextual Info: Preliminary Data Sheet November 2003 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Contextual Info: Preliminary Data Sheet July 2003 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19090E is a 90 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

transistor 7350

Abstract: 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A transistor z14 L
Contextual Info: Preliminary Data Sheet March 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

transistor 7350

Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496
Contextual Info: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

AGR26180EF

Abstract: J500 JESD22-C101A j78 transistor j78 transistor equivalent
Contextual Info: Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,

AGR09085EF

Abstract: AGR09085E AGR09085EU JESD22-C101A j122 mosfet
Contextual Info: Preliminary Data Sheet April 2004 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple