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    100B470JW500X Search Results

    100B470JW500X Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    100B470JW500XT
    		American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 47PF 500V P90 1111 Original PDF 908.54KB
    100B470JW500XT1K
    		American Technical Ceramics Ceramic Capacitor 47PF 500V P90 1111 Original PDF 875.17KB
    SF Impression Pixel

    100B470JW500X Price and Stock

    Kyocera AVX Components

    Kyocera AVX Components 100B470JW500XT

    CAP CER 47PF 500V P90 1111
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () 100B470JW500XT Digi-Reel 943 1
    • 1 $6.21
    • 10 $4.56
    • 100 $3.70
    • 1000 $3.70
    • 10000 $3.70
    		Buy Now
    100B470JW500XT Cut Tape 943 1
    • 1 $6.21
    • 10 $4.56
    • 100 $3.70
    • 1000 $3.70
    • 10000 $3.70
    		Buy Now
    100B470JW500XT Reel 500 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.04
    • 10000 $3.02
    		Buy Now
    Avnet Americas 100B470JW500XT Tape w/Leader 16 Weeks 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.28
    • 10000 $3.04
    		Buy Now
    Mouser Electronics 100B470JW500XT 1,431
    • 1 $6.06
    • 10 $3.94
    • 100 $3.27
    • 1000 $2.97
    • 10000 $2.80
    		Buy Now
    TTI 100B470JW500XT Reel 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.94
    • 10000 $2.77
    		Buy Now
    Richardson RFPD 100B470JW500XT 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.42
    • 10000 $2.14
    		Buy Now

    Kyocera AVX Components 100B470JW500XT1K

    CAP CER 47PF 500V P90 1111
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () 100B470JW500XT1K Digi-Reel 797 1
    • 1 $6.46
    • 10 $4.75
    • 100 $3.86
    • 1000 $3.70
    • 10000 $3.70
    		Buy Now
    100B470JW500XT1K Cut Tape 797 1
    • 1 $6.46
    • 10 $4.75
    • 100 $3.86
    • 1000 $3.70
    • 10000 $3.70
    		Buy Now
    100B470JW500XT1K Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.39
    • 10000 $3.26
    		Buy Now
    Avnet Americas 100B470JW500XT1K Tape w/Leader 12 Weeks 1
    • 1 $6.33
    • 10 $4.63
    • 100 $3.71
    • 1000 $3.71
    • 10000 $3.71
    		Buy Now
    Richardson RFPD 100B470JW500XT1K 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.42
    • 10000 $2.14
    		Buy Now

    Kyocera AVX Components 100B470JW500XTV

    MLC A/B/R - Custom Tape W/Leader (Alt: 100B470JW500XTV)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 100B470JW500XTV Tape w/Leader 12 Weeks 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.88
    • 10000 $3.60
    		Buy Now
    Mouser Electronics 100B470JW500XTV
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.45
    • 10000 $3.45
    		Get Quote

    Kyocera AVX Components 100B470JW500XTV1K

    MLC A/B/R - Custom Tape W/Leader (Alt: 100B470JW500XTV1K)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 100B470JW500XTV1K Tape w/Leader 12 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.91
    • 10000 $3.60
    		Buy Now
    Mouser Electronics 100B470JW500XTV1K
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.03
    • 10000 $3.03
    		Get Quote

    Kyocera AVX Components 100B470JW500XC100

    MLC A/B/R - Waffle Pack (Alt: 100B470JW500XC100)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 100B470JW500XC100 Waffle Pack 12 Weeks 100
    • 1 -
    • 10 -
    • 100 $3.67
    • 1000 $3.04
    • 10000 $3.04
    		Buy Now
    Mouser Electronics 100B470JW500XC100
    • 1 $6.50
    • 10 $4.80
    • 100 $3.74
    • 1000 $3.14
    • 10000 $3.04
    		Get Quote
    Richardson RFPD 100B470JW500XC100 250 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.42
    • 10000 $2.14
    		Buy Now
    Find more 100B470JW500X price and stock on Findchips.com

    100B470JW500X Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    mosfet 1412

    Contextual Info: Draft Copy Only Preliminary Data Sheet September 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR09090EF Hz--960 DS03-202RFPP mosfet 1412 PDF

    Contextual Info: Preliminary Data Sheet October 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR09070EF Hz--960 AGR09070EF DS04-007RFPP DS03-059RFPP) PDF

    100B100JW500X

    Abstract: AGR09090EF JESD22-C101A
    Contextual Info: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR09090EF Hz--960 AGR09090EF DS04-058RFPP DS04-029RFPP) 100B100JW500X JESD22-C101A PDF

    C20 CT

    Abstract: 100B220 sprague CT series
    Contextual Info: AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR09070EF Hz--960 AGR09070EF DS04-057RFPP DS04-027RFPP) C20 CT 100B220 sprague CT series PDF

    Contextual Info: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		AGR09090EF Hz--960 DS04-134RFPP DS04-068RFPP) PDF

    Johanson Technology

    Contextual Info: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR09090EF Hz--960 DS04-029RFPP DS04-005RFPP) Johanson Technology PDF

    926 sprague

    Contextual Info: Preliminary Data Sheet November 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR09070EF Hz--960 AGR09070EF DS04-057RFPP DS04-027RFPP) 926 sprague PDF

    Contextual Info: Preliminary Data Sheet November 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR09070EF Hz--960 AGR09070EF DS04-027RFPP DS04-007RFPP) PDF

    Contextual Info: Preliminary Data Sheet July 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR09070EF Hz--960 AGR09070EF DS03-059RFPP DS03-011RFPP) PDF

    J083

    Contextual Info: Preliminary Data Sheet January 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR09070EF Hz--960 AGR09070EF DS03-011RFPP DS02-221RFPP) J083 PDF

    TB185

    Contextual Info: February 1, 2012 TB185 Frequency=290-320MHz Pout=200W Gain=16dB Vds=28Vdc Idq=1.2A LR301 PH : 805 484-4210 FAX :( 805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com February 1, 2012 TB185 Gain/Efficiency vs Frequency: Vds=28Vdc, Idq=1.2A, Pout=250W


    Original     		TB185 290-320MHz 28Vdc LR301 TB185 28Vdc, 300Mhz 100B130JW500X PDF

    100B100JW500X

    Abstract: AGR09070EF JESD22-C101A 100B100JW500
    Contextual Info: Preliminary Data Sheet April 2004 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR09070EF Hz--960 AGR09070EF DS04-151RFPP DS04-057RFPP) 100B100JW500X JESD22-C101A 100B100JW500 PDF

    AGR09090EF

    Abstract: JESD22-C101A ZX18 grm40x7r103k100al
    Contextual Info: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		AGR09090EF Hz--960 AGR09090EF DS04-153RFPP DS04-134RFPP) JESD22-C101A ZX18 grm40x7r103k100al PDF

    100B100JW500X

    Contextual Info: AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		AGR09090EF Hz--960 Hz--895 DS04-134RFPP DS04-068RFPP) 100B100JW500X PDF

    Contextual Info: Preliminary Data Sheet December 2003 AGR09090EF 90 W, 921 MHz—960 MHz, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		AGR09090EF Hz--960 Hz--895 Therma10-12, DS04-064RFPP DS04-058RFPP) PDF

    j0947

    Abstract: AGR09090EF JESD22-C101A ZX18 ZO 109 wa 100B100JW500X
    Contextual Info: AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		AGR09090EF Hz--960 AGR09090EF Typic14 Hz--895 j0947 JESD22-C101A ZX18 ZO 109 wa 100B100JW500X PDF

    100B100JW500X

    Abstract: AGR09070EF JESD22-C101A grm40x7r103k100al
    Contextual Info: AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR09070EF Hz--960 AGR09070EF perform26 100B100JW500X JESD22-C101A grm40x7r103k100al PDF

    Contextual Info: Preliminary Data Sheet October 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR09090EF Hz--960 T210-12, DS04-005RFPP DS03-202RFPP) PDF