AFM04P2 Search Results

ka band gaas fet Package

Abstract: ka band power fet gaas fet micro-X Package GHZ micro-X Package power amplifier 4 ghz power amplifier power amplifier 5 ghz
Contextual Info: GaAs FETs and PHEMTs 3 9 Q. & Specifications Applications Package Part Number 21 dB Pi dB @ 18 GHz Medium Power Amplifier Chip Via AFM04P2-000 Low Noise/Medium Power MESFET 20 dB Pi dB @ 18 GHz Medium Power Amplifier Chip (Non-Via) AFM04P3-000 Low Noise/Medium

kaba

Abstract: 149-188
Contextual Info: Ka-Band Power GaAs MESFET 61Alpha AFM04P2-000 Features • 21 dBm Output Power at 18 GHz ■ High Associated Gain, 9 dB at 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, D C -4 0 GHz ■ 0 .25 jj.m Ti/Pt/Au Gates ■ Passivated Surface

PT 8830

Contextual Info: Ka-Band Power GaAs MESFET AFM04P2-00 Features Chip Layout • 21 dBm Output Power at 18 G H z ■ High Associated Gain, 9 dB at 18 G H z ■ High Power Added Efficiency, 25% ■ Broadband Operation, D C -4 0 G H z ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface

AFM04P2

Abstract: 43171 69318
Contextual Info: Ka Band Power GaAs MESFET Chip AFM04P2-000 Features • 21 dBm Output Power @ 18 GHz Drain 0.110 mm Gate 0.110 mm 0.395 mm ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, DC–40 GHz ■ 0.25 µm Ti/Pd/Au Gates

AFM04P2-000

Abstract: AFP02N3-000 afp02n3-213
Contextual Info: Section 1 GaAs FETs and PHEMTs Numerical Index Part Number Page AFM02N6-000 1-7 AFM02N6-032 1-3 AFM02N6-212 1-11 AFM02N6-213 1-11 AFM04P2-000 1-26 AFM04P3-104 1-28 AFM04P3-213 1-31 AFM04P3-214 1-31 AFM06P2-000 1-34 AFM08P2-000 1-36 AFP02N3-000 1-15 AFP02N3-104

4232 gm

Abstract: AFM04P2-000
Contextual Info: Ka Band Power GaAs MESFET Chip AFM04P2-000 Features • 21 dBm Output Power @ 18 GHz Drain 0.110 mm Gate 0.110 mm 0.395 mm ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, DC–40 GHz ■ 0.25 µm Ti/Pd/Au Gates

Contextual Info: Ka-Band Power GaAs MESFET AFM04P2-00 Chip Layout Features • 21 dBm Output Power at 18 GHz ■ High Associated Gain, 9 dB at 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, DC-^0 GHz ■ 0.25 xm Ti/Pt/Au Gates ■ Passivated Surface

PJ 0349

Abstract: PJ 0459 jc 817 k MESFET S parameter pj 936 AFM04P2-000 S-12 ka 3525 ka 3525 a 149-188
Contextual Info: ESAlpha Ka Band Power GaAs MESFET Chip AFM04P2-000 Features • 21 dBm Output Power @ 18 GHz ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, D C -40 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface

AFP02N2

Contextual Info: Section 3 GaAs FETs and High Frequency GaAs MMICs Numerical Index Part Number Page Part Number Page AA022N1-00 3-18 AFM06P2-00 3-42 AA022N1-65 3-19 AFM08P2-00 3-44 AA022P1-00 3-13 AFP02N2-00 3-58 AA022P1-65 3-16 AFP02N2-55 3-62 AA028N1-00 3-29 AFP02N2-56 3-62

siliconix vmp4

Abstract: irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet
Contextual Info: Class-E RF Power Amplifiers Come learn about this highly efficient and widespread class of amplifiers. Here are principles of operation, improved design equations, optimization principles and experimental results. By Nathan O. Sokal, WA1HQC of Design Automation, Inc