pt 8799
Contextual Info: , - ., 5 Low Noise Packaged PHEMT S3A lpha AFP02N2-55, AFP02N2-56 Drain Features • Low Noise Figure, 0.75 dB at 12 GHz ■ High Associated Gain, 9.5 dB at 12 GHz ■ High MAG, > 10.0 dB at 12 GHz ■ 0.25 urn Ti/Pt/Au gates ■ Passivated Surface ■ Low Cost Metal Ceramic Package
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AFP02N2-55
Abstract: AFP02N2 pt 8799 AFP02N2-56 AD004T2-00 AD004T2-11 AK006R2-01 AS006M1-01
Contextual Info: EfiAlph Low Noise Packaged PHEMT AFP02N2-55, AFP02N2-56 Drain Features • Low Noise Figure, 0.75 dB at 12 GHz ■ High Associated Gain, 9.5 dB at 12 GHz ■ High MAG, > 10.0 dB at 12 GHz ■ 0.25 urn Ti/Pt/Au gates ■ Passivated Surface ■ Low Cost Metal Ceramic Package
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afp02n2-55afp02n2-56as004l2-11at001d3+12ak004m2-11as004m1-08at001d4-31ak004r2-11as004m1-11at001d6-31afp02n2pt 8799ad004t2-00ad004t2-11ak006r2-01as006m1-01
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617 730 057
Abstract: h 9740 transistor 9740
Contextual Info: 3/MIÉ& Low Noise PHEMT Chip AFP02N2-00 Dimensions in Microns Thickness = 100 Features • Low Noise Figure, 0.70 dB at 12 GHz ■ High Associated Gain, 10.0 dB at 12 GHz ■ High MAG, > 12.5 dB at 12 GHz ■ 0.25 nm Ti/Pt/Au Gates ■ Passivated Surface Description
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afp02n2-00afp02n3-00617 730 057h 9740+1transistor 9740
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AFP02N2-00
Abstract: 40690 AD004T2-00 AD004T2-11 AE002M2-29 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10 103420
Contextual Info: ESAlpini Low Noise PHEMT Chip AFP02N2-00 Dimensions in Microns Thickness = 100 Features Low Noise Figure, 0 .7 0 dB at 12 G H z High Associated G ain, 1 0 .0 dB a t 12 G H z High M A G , > 1 2 .5 dB a t 12 G H z 0 .2 5 [xm Ti/Pt/A u G ates P assivated Surface
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afp02n2-00afp02n3-00as004l2-11at001d3+15ak004m2-11as004m1-08at001d4-31ak004r2-11as004m1-11at001d6-3140690ad004t2-00ad004t2-11ae002m2-29ak006r2-01ak006r2-10as006m1-01as006m1-10103420
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AFP02N2
Contextual Info: Section 3 GaAs FETs and High Frequency GaAs MMICs Numerical Index Part Number Page Part Number Page AA022N1-00 3-18 AFM06P2-00 3-42 AA022N1-65 3-19 AFM08P2-00 3-44 AA022P1-00 3-13 AFP02N2-00 3-58 AA022P1-65 3-16 AFP02N2-55 3-62 AA028N1-00 3-29 AFP02N2-56 3-62
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aa022n1-00aa022n1-65aa022p1-00aa022p1-65+7aa028n1-00aa028p1-00aa028p2-00aa028p3-00aa035p2-00aa035p3-00afp02n2
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AFM02N8-32
Abstract: 02N5 02N50 AF035P1-00
Contextual Info: MMICs GaAs FETs S p i ?' Low Noise and General Purpose FETs Ta = +25°C Fmin Bias Power Bias Vds Ids (V) (mA) P1 dB (dBm) Thermal Resistance (C/W) Max Dissipated Power (mW) Package Style 30 13.0 260 400 Chip 2 30 11.5 260 400 Chip 15.0 4 30 14.5 260 400
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02n5-00afp02n2-00afp02n8-00afm02n5-55/56+8afp02n2-55/56afp02n8-55/56afm02n8-32-55z-56af035p1-00afm06p2-0002n502n50
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SMP1301-01
Abstract: SC9103-10 SMS3994 SMP1301-05 SMP1300 at002d8-25 A60030P535 spd 3465-18 SMP1312-12 SMV1400-109
Contextual Info: Part Number Index A lphan um erical Index for G a A s MMIC and F E T P ro d u cts PART NUMBER PAGE ADC02D2-12 5 ADH01D2-24 5 ADHD1D2-24 5 AF002C1-32 4 AF002C1-39 4 AF002C4-39 4 AF002N2-32 6 7 AF035P1-00 7 AFM02N5-00 AFM02N5-55/56 7 AFM02N8-32 7 7 AFM06P2-00
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adc02d2-12adh01d2-24adhd1d2-24af002c1-32+16af002c1-39af002c4-39af002n2-32af035p1-00afm02n5-00afm02n5-55/56smp1301-01sc9103-10sms3994smp1301-05smp1300at002d8-25a60030p535spd 3465-18smp1312-12smv1400-109
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