AD 162 TRANSISTOR Search Results

HXTR-3685

Abstract: HXTR-3686 HXTR3685 HXTR 3685
Contextual Info: Whpì HEWLETT ll'/ U PACKARD Low Cost General Purpose Transistors Technical Data HXTR-3685 HXTR-3686 F eatures HXTR-3685 HXTR-3686 HXTR-3685 « Low Noise Figure: 1.8 dB Typical at 1 GHz • High Gain: 16.4 typ ical at 1 GHz at Noise Figure Bias • Low Cost Plastic Package

VP271

Abstract: BC163 VP1167 VP250 bc136 vp230 General Electric CR104 BC150 BC101 DATASHEET vp251
Contextual Info: MITSUBISHI MICROCOMPUTERS M37280MFH–XXXSP, M37280MKH–XXXSP M37280EKSP SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M37280MFH–XXXSP and M37280MKH-XXXSP are single-chip microcomputers designed with CMOS silicon gate technology. They

IR LFN

Abstract: 2SD1017 LFN ir 180W 2SB768 2SB810 2SB811 2SB812 T5L10 T8L10
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

BC106

Abstract: BC164 BC133 VP1165 BC102 VP1107 bc104 BC105 VP1117 21c16
Contextual Info: M37281MAH–XXXSP,M37281MFH–XXXSP,M37281MKH–XXXSP, REJ03B0049-0101Z M37281EKSP SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER Rev.1.01 with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M37281MAH–XXXSP, M37281MFH–XXXSP and M37281MKHXXXSP are single-chip microcomputers designed with CMOS silicon

BC136

Abstract: transistor bc102 transistor cr64 1933E BC55 VP143 RC6 philips decoder osd font osd character 1AB3
Contextual Info: Y NAR MI I L E . . tion change ifica pec bject to s l su fina ot a its are is n his ntic lim T : me ice Not e para Som PR MITSUBISHI MICROCOMPUTERS M37280MF–XXXSP, M37280MK–XXXSP M37280EKSP SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER

1933E

Abstract: caption 1AB3 25816 bc136 BC154 CR16 mitsubishi cr64 cr65 VP1160 vp251
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10136 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts power output. Nitride surface passivation and

2SC2340

Abstract: NE568 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857
Contextual Info: NEC/ □427414 0001323 4 1SE D CALIFORNIA r-3 3 -c s NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 SER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H fs : 4.2 GHz The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers

FR4 epoxy dielectric constant 4.4

Abstract: e/AT-33225-BLK
Contextual Info: Whnl H E W L E T T mL'EM P A C K A R D 4.8 V NPN Common Em itter Output Power Transistor for AMPS, ETACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package O u tlin e 25 • 70% C ollector Efficiency

transistor vergleichsliste

Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N

Contextual Info: SD57045 RF POWER TRANSISTORS The Ldm oS T FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs . . EXCELLENTTHERM AL STABILITY COMMON SOURCE CONFIGURATION • Pout = 45 W PEP with 13 dB gain @ 945 MHz . B eO FR EE PACKAGE DESCRIPTION The SD57045 is a common source N-Channel

Contextual Info: 32E D m Ô23b320 OGlb^flS S WÊ SIP NPN Silicon RF Transistor SIEMENS/ SP C Li SEMICONDS BFR35AP _ • For broadband amplifiers up to 2 GHz and fast non­ saturated switches at collector currents from 0.5 to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!

581 transistor motorola

Abstract: 581 transistor motorola device data TO-236-AA MMBR4957 MMBR4957LT1 MMBR4957L
Contextual Info: MOTOROLA Order this document by MMBR4957LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line PNP Silicon MMBR4957LT1, T3 High-Frequency Transistor . . . designed for high–gain, low–noise amplifier oscillator and mixer applications. Specifically packaged for thick and thin–film circuits using surface mount

Contextual Info: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA M JW 16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The M JF 162 06 and the M JW 162 06 are s ta te - o f- th e - a r t S W IT C H M O D E b ipo lar

Contextual Info: MOTOROLA Order this document by MMBR911LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors MMBR911LT1 MPS911 . . . designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package, as well as

ICS844S42BKIL

Abstract: ICS844S42I ICS844S ICS844S42BKI MO-220 844s42 844S42BKI
Contextual Info: Dual Output RF Frequency Synthesizer ICS844S42I DATA SHEET General Description Features The ICS844S42I is a 3.3V compatible, PLL based clock synthesizer targeted for clock generation in HiPerClockS high-performance instrumentation, networking and computing applications. Using either the serial I2C or

Contextual Info: LM317 LINEAR INTEGRATED CIRCUIT 3-TERMINAL POSITIVE ADJUSTABLE REGULATOR The LM317 is a 3-terminal adjustable positive voltage regulator capable o f sup plying In excess o f 1.5A over an o u tp u t voltage range o f 1.2V to 37V. This voltage re gulator is e x c e p tio n a lly easy to use and requires

FZH 161

Abstract: FZH 111 FZH 181 transistor I 17-13 0773 CBC 184 transistor FZH 175 S3230 FZH 165 FZH 165 b fzh 171
Contextual Info: What HEWLETT wHHM P A C K A R D 4.8 V NPN Common Em itter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% C ollector Efficiency

HXTR-2001

Abstract: HXTR-5001 HXTR-5002 HXTR-6001 transistor PT 4500 chip die npn transistor equivalent transistor PT 3500 HXTR5
Contextual Info: KOP Features HXTR-6001 I 0.013 TYP. • EMITTER PAD CIRCUITS M r COM PONENTS LOW NOISE TRANSISTOR CHIP ■- LOW NOISE FIGURE 1.7 dB Typical at 2 GHz 2.7 dB Typical at 4 GHz HIGH GAIN AT NOISE FIGURE BIAS 13.0 dB Typical at 2 GHz 9.0 dB Typical at 4 GHz 330 (0.013)

MP21E

Abstract: sowjetische transistoren MP21D UdSSR KT904 ASZ16 KT315 OC1072 Transistoren DDR asz1015
Contextual Info: electronic Sowjetische Transistoren I n h a l t s v e r z e i c h n i s V o rw o rt K u rz c h a ra lc te rls tlk - G e rm a n iu n tra n s is to re n - S illz lu m tra n s ito re n S t a a t l i c h e r S ta n d a r d d e s S y ste m s f ü r d i e B e z e ic h n u n g d e r H a l b l e i t e r b a u e l e u e n t e d e r UdSSR

HXTR-3101

Contextual Info: HEWLETT-PACKARDi CNPNTS SOE D B M447SÔ4 0005523 7 El w m h ewlett mi.E3 PA C K A R D T 'H -O Ì G eneral Purpose Transistors HXTR-3001 Chip Technical Data HXTR-3101, TX and TXV 2N6838 HXTR-3103, TX and TXV HSMX-3131 HSMX-3151 Features D escription • H ig h G ain

3D24N

Abstract: 618 diode gd 4016 transistor kp 455-A6 radio fernsehen elektronik service-mitteilungen ZF-filter robotron 1PK0
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N .SKPTTCMRRP I radio - television | 1981 9 SEITE 1-4 Auf Wunsch zahlreicher Servicewerkstätten veröffentlichen wir nach­ folgend nochmals die von uns anzuwendenden

Contextual Info: MN34041PL 1.1 Product Summary • Outline This is a MOS-type sensor of 1/3 type offering 2.1 mega pixels. This product consists of embedded photodiode, pixel block by MOS transistor, column AD converter, built-in timing generator TG , high speed serial output I/F and functional

r460 FET

Abstract: tt 6222-1 2SK786 tt 6222 TC-6222 transistor GR 346 L0623 IR 8115 N0245 3e tRANSISTOR
Contextual Info: MOS y<T7 — N MOS Field Effect P ow er Transistor FET I i f f l > YJP ^ - M O S F E T 2SK786 Ü, N T * > & & & f g < , x 4 -y f - > ¿ X T is ' , i S i f J i f c x 4 D C - D C 3 > '< - ? l z M M T t o # i t O V d s s = 900 V , Id do = 3 O fg jtX ^ 7 ? t o