AC 128 TRANSISTOR Search Results

AN AD7195

Abstract: transistor 2440 50 hz Oscillator FS19 REJ60 FS12 0con-200 Registers MIC4427 Application Notes amplifier strain gage discrete transistor
Contextual Info: 4.8 kHz, Ultralow Noise, 24-Bit Sigma-Delta ADC with PGA and AC Excitation AD7195 FEATURES Chromatography PLC/DCS analog input modules Data acquisition Medical and scientific instrumentation AC or DC sensor excitation RMS noise: 8.5 nV at 4.7 Hz gain = 128

1307 TRANSISTOR

Abstract: H15B1 4N38-4N38A "Photo Interrupter" dual transistor 4N38 4N38A IC VS 1307 H11AA1 H11AA2 H11B2
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% AC INPUT COUPLER H11AA1 H11AA2 1289 128? I I 20% 10% 1500 1500 ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100

photo interrupter module

Abstract: GE SCR 1000 GE SCR 1000 AMP H11C H13B1 4N38 4N38A H11A10 H11AA1 H11AA2
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER R A TIO MIN. MIN. 1500 1 10% AC INPUT COUPLER H11AA1 H11AA2 1289 128? 1500 1500 I I 20% 10% ID nA MAX. BV c e o (VOLTS) MIN. 50 30 100 200 30 30 100 100

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 3, 6/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies

ATC100B1R0CT500XT

Abstract: Variable Gain Amplifiers freescale MRF6VP121KHR6 LDMOS push pull
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 0, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed

r2561

Abstract: MRF6V12500H A114 A115 AN1955 C101 JESD22 MRF6V12500HR3 MRF6V12500HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies

GRM31CR72A105K

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 1, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies

MRF6V12250HSR3

Abstract: MRF6V12250H
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V12250H Rev. 0, 5/2009 RF Power Field Effect Transistors MRF6V12250HR3 MRF6V12250HSR3 N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies

wiring diagram OMRON CPM1A-30CDR

Abstract: CPM1A-30CDR-A omron CPM1-CIF01 rs 232 manual cpm1a cable OMRON CPM1A-30CDR manual CPM1-CIF01 CPM1A-40CDR-A CPM1A-20EDR CPM1A-TS101-DA TS101DA
Contextual Info: R Micro Programmable Controller CPM1A The CPM1A series micro controllers solve both basic and semi-complex applications. The brick style models include AC inputs/relay outputs, DC inputs/transistor or relay outputs to meet your design requirements. The base I/O for the

G2225X7R225KT3AB

Abstract: MRF6V12250HSR3 AN1955 MRF6V12250HR3 J162 250GX-0300-55-22
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V12250H Rev. 2, 4/2010 RF Power Field Effect Transistors MRF6V12250HR3 MRF6V12250HSR3 N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies

G2225X7R225KT3AB

Abstract: ATC100B330 ATC100B9R1CT500XT ATC100B102 96012 ad255 960-1215mhz A115 AN1955 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V12250H Rev. 1, 7/2009 RF Power Field Effect Transistors MRF6V12250HR3 MRF6V12250HSR3 N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V12250H Rev. 2, 4/2010 RF Power Field Effect Transistors MRF6V12250HR3 MRF6V12250HSR3 N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies

r2561

Abstract: MRF6V12500HR3 ATC100B330JT500XT AN1955 MRF6V12500H MRF6V12500HSR3 G2225
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 2, 9/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies

250GX-0300-55-22

Abstract: MCGPR63V477M13X26-RH ATC100B360JT500XT ATC100B1R0CT500X MRF6VP121KH ATC100B1R0CT500XT ATC100B3R6CT500XT ATC100B100JT500X JESD22-A114 MRF6VP121KHR6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 2, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed

CPM1A-MAD01 manual

Abstract: CPM1-CIF01 cpm1-cif11 omron cpm1a-40cdr-a-v1 CPM1A-MAD01 C200H Pro27 OMRON Operation Manual CPM1A-MAD11 c200h-cn320-eu CPM1A-MAD11 manual OMRON CPM1A-30CDR-A-V1 programming manual
Contextual Info: Micro Programmable Controller CPM1A The CPM1A series micro controllers solve both basic and semi-complex applications. The brick style models include DC inputs/transistor or relay outputs to meet your design requirements. The base I/O for the CPUs ranges from 10, 20, 30, and 40 I/O points with

Contextual Info: STVM100 I2C LCD/e-paper VCOM calibrator Datasheet - production data Applications • TFT-LCD panels • e-paper and e-book displays TDFN8 3 mm x 3 mm (DC) Description The STVM100 is a programmable VCOM adjustment solution for thin-film transistor (TFT) liquid-crystal displays (LCDs) to remove “flickers”.

Contextual Info: 1 mLttM PACKARD W h ü H E W L E T T NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38043 Surface Mount Package • Operates Over a Wide Range SOT-343 SC-70 Features • • • • of Voltages and Frequencies +25.0 dBm PldB and 60 % Collector Efficiency @

MP21E

Abstract: sowjetische transistoren MP21D UdSSR KT904 ASZ16 KT315 OC1072 Transistoren DDR asz1015
Contextual Info: electronic Sowjetische Transistoren I n h a l t s v e r z e i c h n i s V o rw o rt K u rz c h a ra lc te rls tlk - G e rm a n iu n tra n s is to re n - S illz lu m tra n s ito re n S t a a t l i c h e r S ta n d a r d d e s S y ste m s f ü r d i e B e z e ic h n u n g d e r H a l b l e i t e r b a u e l e u e n t e d e r UdSSR

MGCF21

Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount

AC187

Abstract: AC187 188 AC188 GERMANIUM AC132 AC188K AC188 ac187 AC125 AC181 GERMANIUM SMALL SIGNAL TRANSISTORS AC187K
Contextual Info: GERMANIUM SMALL SIGNAL TRANSISTORS PRO ELECTRON TYPES Type Polar­ ity yC3o ^£•0 Vc, V Max y Max Max V h" /c B O @ y ca V Cob Pf Max yA Max Min Max mA 8 18 3550-140 40- 300' 20 150 212 30-60 50-100 75-150 125-250 100 100 100 100 40 40 40 40 Pack Outline

transistor vergleichsliste

Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N

LM310M

Contextual Info: LM110/LM210/LM310 National Sem iconductor LM110/LM210/LM310 Voltage Follower General Description The LM110 series are monolithic operational amplifiers in­ ternally connected as unity-gain non-inverting amplifiers. They use super-gain transistors in the input stage to get low

Contextual Info: N AMER PHILIPS/DISCRETE bTE D bbS3R31 0D3DMSD T7R * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device is intended for use in Switched Mode Power Supplies

TEMIC ecl

Abstract: microcontroller radiation tolerance microcontroller radiation hard CLCC 84 CMOS NAND2
Contextual Info: Temic Full Custom: MF Semiconductors 0.8-fxm BiCMOS Gate Array Description MF is a high speed gate array combining 10-GHz n-p-n and integration close to that of CMOS LSIs, keeping low bipolar transistors, with CMOS 0.8-nm, two metal layer power competitiveness.