H11C Search Results

h11cx

Abstract: GK transistor in5060 SC146D H11C H11C3 gk 02 a 041 H11C1 IN5060 diode GK 74 transistor
Contextual Info: PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 PACKAGE H11C5 SCHEMATIC ANODE 1 6 H11C6 6 GATE 6 CATHODE 2 5 ANODE 1 N/C 3 1 4 CATHODE 6 1 DESCRIPTION The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled

H11C1

Abstract: H11C1X H11C2 H11C2X H11C3 H11C3X H11C4 H11C4X H11C5 H11C5X
Contextual Info: H11C1X, H11C2X, H11C3X, H11C4X, H11C5X, H11C6X H11C1, H11C2, H11C3, H11C4, H11C5, H11C6 PHOTON COUPLED ISOLATOR Ga As INFRARED EMITTING DIODE & LIGHT ACTIVATED SCR APPROVALS l UL recognised, File No. E91231 Dimensions in mm 2.54 7.0 6.0 'X' SPECIFICATION APPROVALS

scr optoisolator

Abstract: H11C1 SCR PIN CONFIGURATION VDE0113 VDE0160 VDE0832 VDE0833 VDE0883 H11C3
Contextual Info: MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA H11C1 H 11C2 H 11C 3 6 -P in D IP O p t o is o la t o r s SCR Output T h e se d e v ic e s c o n sist of g a lliu m -a rse n id e infrared em itting d io d e s op tica lly c o u p le d to p h o to se n sitiv e silic on co ntrolled rectifiers SC R . T h e y are d e s ig n e d for a p p lica tion s

H11C6-XXX9

Abstract: Infrared Temperature Sensor dip-6 H11C6 PHOTO SCR OPTOCOUPLER H11C4 H11C5
Contextual Info: H11C4/ H11C5/ H11C6 VISHAY Vishay Semiconductors Optocoupler, PhotoSCR Output, 400 V VRM, 5 A surge current Features • • • • Turn on current IFT , 5.0 mA typical Gate trigger current (IGT), 20 mA typical Surge anode current, 5.0 A Blocking voltage, 400 V gate trigger voltage (VGT),

Contextual Info: SIEMENS H11C4/H11C5/H11C6 PHOTO SCR OPTOCOUPLER Advance Data Sheot FEATURES • • • • • • • • • Package Dimensions in Inches mm r?i r?i ñ Turn On Current Oft)» 5 0 mA Typical Gate Trigger Current (lGT), 20 mA Typical Surge A node Current, 5.0 A

H11C2-H11C3

Abstract: Opto-isolator 50V-RGK
Contextual Info: Optoisofator Spécifications H11C1, H11C2, H11C3 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR T he HI 1C1, HI 1C2 and H11C3 are gallium arsenide, infrared em itting diodes coupled with light activated silicon controlled rectifiers in a dual in-line package. T hese devices are also

GK 243

Abstract: MPEH
Contextual Info: Optotsolator Specifications H11C4, H11C5, H11C6 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR INCHES MILLIMETERS MIN WAX MIN MAX T h e H 1 1 C 4 , H 1 1 C 5 a n d H 1 1 C 6 a re g a lliu m a rs e n id e , in f r a r e d e m ittin g d io d e s c o u p le d w ith lig h t a ctiv ate d silic o n

PHOTO SCR OPTOCOUPLER

Abstract: OPTOCOUPLER MARKING CODE the light activated scr opto-coupler scr
Contextual Info: Central H11C4M PHOTO SCR OPTOCOUPLER TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor H11C4M is a galliumarsenide infrared emitting Diode optically coupled with a light activated silicon controlled rectifier in a DIP-6 dual-in-line package. This device is designed

PHOTO SCR OPTOCOUPLER

Abstract: H11C6 H11C4 H11C5 opto-coupler scr
Contextual Info: H11C4/H11C5/H11C6 Photo SCR Optocoupler Dimensions in Inches mm FEATURES • Turn On Current (IFT), 5.0 mA Typical • Gate Trigger Current (IGT), 20 mA Typical • Surge Anode Current, 5.0 A • Blocking Voltage, 400 V Gate Trigger Voltage (VGT), 0.6 V Typical

H11C2 equivalent

Abstract: H1106 B11C2 H11C2-H11C3 HIIC4 t9h7 ST2047
Contextual Info: EO PHOTO SCR OPT0 COUPLERS im m c im it s H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 The H11C series consists of a gailium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a duaMn-iine package. 7.62 MAX 0.41

H11C6

Contextual Info: Optoisotator Specifications H11C4, H11C5, H11C6 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR INCHES MILLIMETERS MIN MAX MIN '"M A X 8 89 62 REF 8 6J T h e H 1 1 C 4 , H 1 1 C 5 a n d H 1 1 C 6 a re g alliu m a rs e n id e , in fr a r e d e m ittin g d io d e s c o u p le d with lig h t activ ated silico n

GE SCR 1000

Abstract: H11C1 10KC2 10KI1 10KO H11C2 H11C3 JK30 H11C1 GE
Contextual Info: G E SOLI» STÄTE 01 D E | 3 fl 7 5 0 f l l □ D I T 714 1 optoelectronic Specifications . T - 4 / - S “7 Photon Coupled Isolator H11C1,H11C2,H11C3 Ga As Infrared Emitting Diode & Light Activated SCR - M ILLIM ETERS seatino MIN. A T he G E Solid State H 11C 1, H11C2 and H 1 1C3 are gallium arsenide,

photo 3-pin IR sensor

Abstract: PHOTO SCR OPTOCOUPLER H11C4 H11C5 H11C6
Contextual Info: g y, , H11C4/H11C5/H11C6 Photo SCR Optocoupler Dimensions in Inches mm FEATURES • Turn On Current (IFT), 5.0 mA Typical • Gate Trigger Current (IGT), 20 mA Typical • Surge Anode Current, 5.0 A • Blocking Voltage, 400 V Gate Trigger Voltage (VGT), 0.6 V Typical

Contextual Info: SIEMENS H11C4/M11C5/H11C6 Photo SC R Optocoupler FEATU RES • Tlim O n Current FT , 54) mA Typical • Gate TH ggerCutl»ot(IG T),aO m A Typical • Surge Anode CWvent,SJO A • Blocking Voltage, 400 V G ata Trigger Voltage (VGT), 0.6 VTyp^cql • Isolation Vbltag#, 5300 VAC r m s

PHOTO SCR OPTOCOUPLER

Abstract: H11C4 H11C5 H11C6 H11C5-H11C6 SCR optocoupler
Contextual Info: H11C4/H11C5/H11C6 Photo SCR Optocoupler Dimensions in Inches mm FEATURES • Turn On Current (IFT), 5.0 mA Typical • Gate Trigger Current (IGT), 20 mA Typical • Surge Anode Current, 5.0 A • Blocking Voltage, 400 V Gate Trigger Voltage (VGT), 0.6 V Typical

Contextual Info: H11C4/H11C5/H11C6 Photo SCR Optocoupler Dimensions In Inches mm FEATURES Turn On Current (/ ft ), 5.0 m A Typical G ate Trigger Current (/ gt ), 20 mA Typical Surge Anode Current, 5.0 A Blocking Voltage, 400 V G ate Trigger Voltage (Fg t ), 0.6 V Typical

PHOTO SCR OPTOCOUPLER

Abstract: ac opto triac H11C6 Photo SCR scr 114 H11C4 H11C5
Contextual Info: H11C4/H11C5/H11C6 Photo SCR Optocoupler Dimensions in Inches mm FEATURES • Turn On Current (IFT), 5.0 mA Typical • Gate Trigger Current (IGT), 20 mA Typical • Surge Anode Current, 5.0 A • Blocking Voltage, 400 V Gate Trigger Voltage (VGT), 0.6 V Typical

h11cx

Abstract: GK transistor PHOTO SCR definition IN5060 diode SC146D DATA SHEET Photo SCR H11C3 H11C5 H11C4 scr pins
Contextual Info: PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 PACKAGE H11C5 SCHEMATIC ANODE 1 6 H11C6 6 GATE 6 CATHODE 2 5 ANODE 1 N/C 3 1 4 CATHODE 6 1 DESCRIPTION The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled

Contextual Info: 3875081 G E SO LID STATE 01E 19718 Optoelectronic Specifications- • 37E D HARRIS SEtllCOND SECTOR 4305271 0027100 3 M HAS Photon Coupled Isolator H11C4 »H11C5, H11C6 V /' 1 IN C H ES M IL L IM E T E R S *• SY M 30L' M IN . M A X . • M IN.

IL074

Abstract: VDE-0806 VDE0660 Deutsche Post IEC435 VDE0804 SFH611 IL300G IEC380 VDE0806
Contextual Info: SS D 5-31 4N25/26/27/28 H or J X 4N32/33 H or J X 4N35/36/37 H or J X 6N135/136 H X X 6N138/139 H X X BRT11/12/13 H or J X BKT21/22/23 H or J X CNY17/CNY17F H or J X H11A1/2/3/4/5 H or J X H11AA1 H X H11B1/2/3 H or J X H11C4/5/6 Hor J X H11D1/2/3 H or J X

H11C6-XXX9

Contextual Info: H11C4/ H11C5/ H11C6 VISHAY Vishay Semiconductors Optocoupler, PhotoSCR Output, 400 V Vrm, 5 A surge current Features • • • • Turn on current IFT , 5.0 mA typical Gate trigger current (IGT), 20 mA typical Surge anode current, 5.0 A Blocking voltage, 400 V gate trigger voltage (VGT),

h11c4

Abstract: H11C3
Contextual Info: PHOTO SCR OPTOCOUPLERS OPTOELECTRONICS H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 a DESCRIPTION The H11C series consists of a gallium -arsenide infrared em itting diode optically coupled with a light activated silicon controlled rectifier in a dual-in-line package.

H11C4

Abstract: H11C4-X006 H11C5 H11C6 H11C6-X009
Contextual Info: H11C4/ H11C5/ H11C6 VISHAY Vishay Semiconductors Optocoupler, PhotoSCR Output, 400 V VRM, 5 A surge current Features • • • • Turn on current IFT , 5.0 mA typical Gate trigger current (IGT), 20 mA typical Surge anode current, 5.0 A Blocking voltage, 400 V gate trigger voltage (VGT),

11C6

Contextual Info: MOTOROLA •1 SEMICONDUCTOR TECHNICAL DATA H11C4 H11C5 H11C6 6-Pin DIP Optoisolators S C R Output T h e se d e vices c o n sist of gailiu m -arse n id e infrared em itting d io d e s optically c o u p le d to p ho to se n sitiv e silicon controlled rectifiers SCR}. T h e y are d e sig n e d for applications