96012 Search Results

S21ME8

Abstract: 9601-2
Contextual Info: SPE . NO. ED-96012 s~ Is#flpk.2 1996 PAW: i ‘[$p,g!>/ . ‘~ ,! .2 J REPRESENTAT~\~ ,fi + ,/, >. .> OPTO-ELECTRO’MC DEVICES DIV. ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION / \ DEVICE SPECIFICATION FOR PHOTOTRLAC COUPLER MODEL No, S21ME8

Contextual Info: PD - 96012A IRF6100PbF HEXFET Power MOSFET l l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel Lead-Free VDSS RDS(on) max ID -20V

Contextual Info: P1/11 IC-SP-96012 R2 ＥＣＮ３０２１／３０２２ アプリケーションノート １．概要 ＥＣＮ３０２１ＥＣＮ３０２２は、ＩＧＢＴ Insulated Gate Bipolar Transistor を ６個内蔵したワンチップ三相ブリッジＩＣです。

mosfet p channel irf

Abstract: 4.5v to 100v input regulator
Contextual Info: PD - 96012B IRF6100PbF HEXFET Power MOSFET l l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel Lead-Free VDSS RDS(on) max ID -20V

IRF P-Channel FET 100v

Abstract: 4.5v to 100v input regulator
Contextual Info: PD - 96012 IRF6100PbF HEXFET Power MOSFET l l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel Lead-Free VDSS RDS(on) max ID -20V

TRW mmic

Contextual Info: TLH124C HEMT Image Rejection Downconverter GaAs Telecom Products Features RF frequency: 37 to 40 GHz Noise figure: 4.0 dB Conversion gain: 7.0 dB Self bias: 5V/95 mA Built-in LO drive amplifier Description and Applications The TLH124C is a monolithic HEMT low-noise image rejection downconverter designed for

TAN15

Contextual Info: TAN15 15 Watts, 40 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The TAN15 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor

AJT150

Abstract: ASI10548
Contextual Info: AJT150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AJT150 is a common base RF power transistor primarily designed for pulsed avionics applications such as, mode-s TCAS and JTIDS. A 4x .062 x 45° 2xB C F E D G 2xR FEATURES:

AJT006

Abstract: ASI10544 transistor j852
Contextual Info: AJT006 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° .040 x 45° C 2xB The ASI AJT006 is Designed for 9 – 1215 MHz, JTIDS Applications. ØE D F G H I FEATURES: M • Internal Input/Output Matching Network • PG = 9.3 dB at 6.0 W/1215 MHz

TAN300

Contextual Info: TAN 300 300 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The TAN 300 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven

375-500

Contextual Info: Standard Bandwidth Models SPECIFICATIONS MODEL I-332.5/85 I-437.5/125 Frequency MHz I-575/150 1-750/200 I-975/250 I-1090/260 I-1425/350 I-2050/700 290-375 375-500 500-650 650-850 850-1100 960-1220 1250-1600 1700-2400 Impedance: (Ohms) 50 50 50 50 50 50 50

Contextual Info: High Power Bi-Directional Coupler 50Ω 24dB Coupling Maximum Ratings DC Pass SYBD-24-142HP+ 960 to 1400 MHz Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C DC Current 2A Permanent damage may occur if any of these limits are exceeded.

HVV0912-800

Abstract: SEMICONDUCTORS INC
Contextual Info: HVV0912-800 Preliminary Datasheet L-Band High Power Pulsed Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications DESCRIPTION PACKAGE The high power HVV0912-800 device is a high voltage silicon enhancement mode RF transistor

MSH 11

Abstract: 37.5 GHz SCHOTTKY DIODE
Contextual Info: MSH108C HEMT Schottky Diode Mixer GaAs Telecom Products Features • RF frequency: 35 to 40 GHz • Conversion loss: 6 dB • Functions as upconverter and downconverter • Singly balanced mixer topology Description and Applications The MSH108C is a monolithic HEMi scnottKy diode, smgiy-Daianced mixer designed tor use in com­

35 W 960 MHz RF POWER TRANSISTOR NPN

Abstract: 40w electronic ballast diode gp 421 Electronic ballast 40W MAPRST0912-350 transistor j08
Contextual Info: AVIONICS PULSED POWER TRANSISTOR 350 WATTS, 960-1215 MHz, 10us PULSE, 10% DUTY 01 Nov 2006 Outline Drawing Features • • • • • • • • • MAPRST0912-350 NPN Silicon Microwave Power Transistors Common Base Configuration Broadband Class C Operation

CB410

Abstract: stu 407 2804lSL CB-50 CB303 1090 TACAN CB-303 CB-408 SD1543-2
Contextual Info: 960. 1215 MHz class C pulse for DME/IFF/TACAN transistors pour applications DME/IFF/TACAN puisées, classe C TYPE PAC K AG E CONFIG. Vcc V SD 1528 .280 4L STUD (A) SD 1528-1 .280 4LSL (A) SD 1528-8 .250 2LFL HERM SD 1530 .280 4L STUD (A) SD 1530-1 .280 4LSL (A)

Contextual Info: Datasheet No.108 KLHC3609W 9W 815-980Lm KLHC3613W 13W 960-1220Lm Packaging Dimensions Related Parts CCT Lumens Typ Imax KLHC3609W Sq 13.5 mm 5700 815-980 Lm 240 mA KLHC3613W Sq 13.5 mm 5700 960-1220 Lm 360 mA Electrical/Optical Characteristics at Ta = 25°C

M171

Abstract: AM0912-080 TACAN SD1550 M198 AM0912-300 S042 SD1512 SD8250
Contextual Info: S IL IC O N P O W E R T R A N S IS T O R S .400 .400 2LFL S036 .400 X .500 2LFL (SO38) .400 x .400 2NLFL (S042) X .310 x .310 2LFL (S064) 960-1215 MHz CLASS C, COM MON BASE, PULSED, TACAN A P PLIC A TIO N S Vcc (V) SD1550 960-1215 15 1.5 10.0 40 40 3.3 20

MAPRST0912-50

Contextual Info: AVIONICS PULSED POWER TRANSISTOR 50 WATTS, 960-1215 MHz, 10us PULSE, 10% DUTY 01 Nov 2006 Outline Drawing Features • • • • • • • • • MAPRST0912-50 NPN Silicon Microwave Power Transistors Common Base Configuration Broadband Class C Operation

FW206

Contextual Info: FW206 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features • High density mounting is possible because of the complex type which holds two chips of a low on-resistance, Very-high speed switching and 4-volt-drive, N channel MOSFET in one package.

TACAN transistor

Contextual Info: MS2209 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATION Features • · · · · REFRACTORY/GOLD METALIZATION LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY EMITTER SITE BALLASTED DESCRIPTION: THE MS2209 AVIONICS POWER TRANSISTOR IS A BROADBAND,

MS2209

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2209 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • 225 MHz BANDWIDTH COMMON BASE GOLD METALLIZATION CLASS C OPERATION POUT = 90 W MIN. WITH 13 dB GAIN

JTDB75

Contextual Info: JTDB 75 75 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The JTDB 75 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven

Contextual Info: Order this data sheet MOTOROLA by M R F10120H/D SEMICONDUCTOR TECHNICAL DATA MRF10120H* MHz Microwave Power Transistor 120 Watts NPN 960-1215 MHz .ill! CPT0 Designed for long pulsed common base amplifiers. Guaranteed Performance at 1215 MHz - Output Power = 120 Watts Peak