ABB GTO Search Results

3AFY 61201998 R0125 REV A

Abstract: plc wiring diagram for dg synchronisation schematic diagram igbt inverter welding machine ELEVATOR LOGIC CONTROL PLC 3 phase sinus inverters circuit diagram igbt abb variable frequency drive wiring diagram MTBF fit IGBT 1200 3AFE64514482 Motor Control Center wiring diagram abb wiring diagram dol motor starter
Contextual Info: ABB drives Technical guide book 2 Technical guide book ABB drives Technical guide book 3AFE64514482 REV E EFFECTIVE: 26.10.2010 Copyright 2010 ABB. All rights reserved. Technical guide book 3 4 Technical guide book Contents 1. Direct Torque Control explains what DTC is; why and how

abb traction motor

Abstract: diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12
Contextual Info: IGBT and Diode dies ABB Semiconductors ABB IGBT and Diode dies from stateof-the-art SPT planar technology platform. Fig.1 Un-sawn wafer, sawn wafer die on frame and pick-and-place dies in waffle-packs ABB Semiconductor has a well established reputation in the

schematic diagram igbt inverter welding machine

Abstract: wind energy simulink matlab wind SOLAR simulink matlab UNITROL 1000 rc helicopter circuit diagram abb acs800 bridge circuit diagram igct abb ABB Thyristor YST PROJECT REPORT ON 220 kv substation thyristor aeg
Contextual Info: ABB Review The corporate technical journal of the ABB Group www.abb.com/abbreview 3 / 2008 Pioneering spirits Power electronics revolution in high dc current IGBT: aA tiny chip with a huge impact page 19 measurement page 6 Team-mates: MultiMove functionality

GTO thyristor Curve properties

Abstract: ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1
Contextual Info: ABB Semiconductors AG Section 3 SECTION 3 DATA SHEET USER’S GUIDE BY ANTON SCHWEIZER S 3-1 ABB Semiconductors AG Section 3 DATA SHEET USER’S GUIDE 3.1 GTOs Introduction This section is a detailed guide to proper understanding of a GTO data sheet. Parameters and ratings will be defined, and illustrated by

5SDD71B0200

Abstract: stud type diodes ABB GTO R2501 08F4500 71B0200
Contextual Info: Fast Recovery Diodes ABB Semiconductors AG I Optimized fast and soft turn-off. Small reverse recovery charge. High di/dt capability at turn-off. Range optimally suited for GTO applications. Type and ordering number Optimiertes schnelles und weiches Ausschaltverhalten.

05D2500

Abstract: GTO ABB GTO gate drive unit ABB GTO gate unit ABB GTO 30L2501 25H2501 05D250 5SDF GTO 6.5 KV
Contextual Info: Asymmetrie GTO Thyristors ABB Semiconductors AG I - P atentierter freier Druckkontakt. - Alle G TO s werden unter A usschalt­ G renzw erten getestet. - Ausgezeichnete O ptim ierung zw ischen Durchlass- und Schaltverlusten. - G arantierte R ückw ärts-AvalancheBelastbarkeit.

R2501

Abstract: 01R25 71B0200 ABB GTO ci d 4800 r2503 5SDF01R2502 08F4500 b0200 5SDF
Contextual Info: Fast Recovery Diodes ABB Semiconductors AG I O ptim ized fast and soft turn-off. Sm all reverse recovery charge. High di/dt capability at turn-off. Range optim ally suited for GTO applications. > T yp e and ordering num ber O ptim iertes schnelles und weiches

thyristor Q 720

Abstract: thyristor N 600 ch 14 GTO hvdc thyristor 5STP03D6500 ABB thyristors abb phase control thyristors 13N65 field controlled thyristor 5stp 5STP25M5200
Contextual Info: Phase Control and Bi-directionally Controlled Thyristors ABB Switzerland Ltd, Semiconductors The work-horse of power conversion remains vital and is ready to conquer new applications and setting new power records. Since its introduction in the 1960s, the phase control thyristor

ABB 5SGA

Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502
Contextual Info: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s

ABB GTO

Abstract: stud type diodes fjs 500
Contextual Info: Fast Recovery Diodes ABB Semiconductors AG I - O ptim ized for fast and soft turn-off. Sm all reverse recovery charge. High d i/d t capability at turn-off. Range optim ally suited for G TO applications. O ptim iertes schnelles und weiches Ausschaltverhalten.

GTO hvdc thyristor

Abstract: 5STP 57U4200 abb thyristors 5STP03D6500 6" thyristor for HVDC field controlled thyristor ABB Thyristor Field measurements on High Power Press Pack Semiconductors 5STP20N8500 GTO thyristor ABB
Contextual Info: Phase Control and Bi-directionally Controlled Thyristors ABB Semiconductors The work-horse of power conversion Since its introduction almost 50 years ago, the Phase Control Thyristor has been the back-bone of the high power electronics industry. Its field of application ranges from kW DC-drives

Contextual Info: A S E A BROUN/ABB D • ñ3 SEMICON 004Ö3GÖ 0QQD503 ñ T - Z 5 -O Í Modules with reverse conducting Module mit rückwärtsleitenden Thyristoren Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor

5SDF06D2504

Abstract: abb 800
Contextual Info: 5SDF 06D2504 5SDF 06D2504 Old part no. DM 827-620-25 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 2 500 I FAVm = 615 I FSM = 10 000 V TO = 1.196

5SDF 08F4505

Abstract: abb S 08f45
Contextual Info: 5SDF 08F4505 5SDF 08F4505 Old part no. DM 818-800-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 767 I FSM = 15 000 V TO = 1.807

5SDF12T3005

Contextual Info: 5SDF 12T3005 5SDF 12T3005 Old part no. DM 818C-1200-30 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 3 000 I FAVm = 1 256 I FSM = 19 000 V TO = 1.195

Contextual Info: 5SDF 04T4504 5SDF 04T4504 Old part no. DM 827C-360-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500

06T2504

Abstract: 5SDF06T2504
Contextual Info: 5SDF 06T2504 5SDF 06T2504 Old part no. DM 827C-620-25 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 2 500 I FAVm = 615 I FSM = 10 000 V TO = 1.196

5SDF 08T4505

Contextual Info: 5SDF 08T4505 5SDF 08T4505 Old part no. DM 818C-800-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 767 I FSM = 15 000 V TO = 1.807

5SDF 12T2505

Abstract: 5sDF12t2505
Contextual Info: 5SDF 12T2505  5SDF 12T2505 Old part no. DM 818C-1200-25 Fast Recovery Diode Properties • Optimized recovery characteristics • Industry standard housing Applications  suited for GTO applications  Snubber diode  Freewheeling diode Key Parameters

5SDF 12F2505

Abstract: 12F2505 dm265
Contextual Info: 5SDF 12F2505  5SDF 12F2505 Old part no. DM 818-1200-25 Fast Recovery Diode Properties • Optimized recovery characteristics • Industry standard housing Applications  suited for GTO applications  Snubber diode  Freewheeling diode Key Parameters

Contextual Info: 5SDF 04D4504 5SDF 04D4504 Old part no. DM 827-360-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 361 I FSM = 6 000 V TO = 1.858 rT

Contextual Info: 5SDF 04T4504 5SDF 04T4504 Old part no. DM 827C-360-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 361 I FSM = 6 000 V TO = 1.858

Contextual Info: 5SDF 08T4505 5SDF 08T4505 Old part no. DM 818C-800-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500

Contextual Info: 5SDF 12T3005 5SDF 12T3005 Old part no. DM 818C-1200-30 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 3 000