KA DIODE
Abstract: 5SPR 08F4500 08F45
Contextual Info: VDRM VRRM IPULSE VDcmax = 4.5 kV = 0V = 12 kA = 2.8 kV High Current High di/dt Switch for Pulsed Power Applications 5SPR 08F4500 Doc. No. 5SYA 14PP-01 Oct. 01 • • • • • • • • • Features Reverse Conducting Design For single or repetitive pulse applications
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08f450014pp-01ch-5600ka diode+25spr 08f450008f45
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5SPR 08F4500
Abstract: 08F4500 08F45
Contextual Info: VDRM VRRM IPULSE VDcmax = 4.5 kV = 0 V = 12 kA = 2.8 kV High Current High di/dt Switch for Pulsed Power Applications 5SPR 08F4500 • • • • • • • • • Features Reverse Conducting Design For single or repetitive pulse applications Very high di/dt capability
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08F45
Abstract: 5SPY 08F4500 GATE DRIVER ABB
Contextual Info: VDRM VRRM IPULSE VDcmax = 4.5 kV = 18 V = 30 kA = 2.8 kV High Current High di/dt Switch for Pulsed Power Applications 5SPY 08F4500 • • • • • • • • • Features Asymmetric Design For single or repetitive pulse applications Very high di/dt capability
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08f4500ch-560008f455spy+1gate driver abb
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ABB GTO
Abstract: stud type diodes fjs 500
Contextual Info: Fast Recovery Diodes ABB Semiconductors AG I - O ptim ized for fast and soft turn-off. Sm all reverse recovery charge. High d i/d t capability at turn-off. Range optim ally suited for G TO applications. O ptim iertes schnelles und weiches Ausschaltverhalten.
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05d250111f2s0145x100abb gto+2stud type diodesfjs 500
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R2501
Abstract: 01R25 71B0200 ABB GTO ci d 4800 r2503 5SDF01R2502 08F4500 b0200 5SDF
Contextual Info: Fast Recovery Diodes ABB Semiconductors AG I O ptim ized fast and soft turn-off. Sm all reverse recovery charge. High di/dt capability at turn-off. Range optim ally suited for GTO applications. > T yp e and ordering num ber O ptim iertes schnelles und weiches
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vrrm/100v01r25015sdf01r250214urer+113x10045x100r250101r2571b0200abb gtoci d 4800r250308f4500b02005sdf
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05D2500
Abstract: GTO ABB GTO gate drive unit ABB GTO gate unit ABB GTO 30L2501 25H2501 05D250 5SDF GTO 6.5 KV
Contextual Info: Asymmetrie GTO Thyristors ABB Semiconductors AG I - P atentierter freier Druckkontakt. - Alle G TO s werden unter A usschalt G renzw erten getestet. - Ausgezeichnete O ptim ierung zw ischen Durchlass- und Schaltverlusten. - G arantierte R ückw ärts-AvalancheBelastbarkeit.
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15f25025d25dq01r250120h2501+1305d250011f250001r25d125h25c1gto abbgto gate drive unitabb gto gate unitabb gto30l250125h250105d2505sdfgto 6.5 kv
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5SDD71B0200
Abstract: stud type diodes ABB GTO R2501 08F4500 71B0200
Contextual Info: Fast Recovery Diodes ABB Semiconductors AG I Optimized fast and soft turn-off. Small reverse recovery charge. High di/dt capability at turn-off. Range optimally suited for GTO applications. Type and ordering number Optimiertes schnelles und weiches Ausschaltverhalten.
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vrrm/100v01r250101r2502001bfi3fl+9fig-103x10045x1005sdd71b0200stud type diodesabb gtor250108f450071b0200
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