AB89 Search Results

YA28

Abstract: nortel demux nortel photodetector AB89 AC03 AC10 YA08 YA26 NORTEL photodiode AC10 post amplifier
Contextual Info: Preliminary AB89 2.5 Gb/s Transimpedance Amplifier, 3.3 Volt supply Data Sheet Features Single +3.3 V power supply operation Input noise current = 330 nA rms when used with a 0.5 pF detector Transimpedance gain = 2.5 kΩ differential On-chip automatic gain control gives input

AB89

Abstract: A0805735 QMV1155A-A nortel photodetector
Contextual Info: Preliminary Data Sheet AB89 2.5 Gb/s Transimpedance Amplifier, 3.3 Volt supply Features Applications Single +3.3 V power supply operation SONET/SDH-based transmission systems, test equipment and modules Input noise current = 330 nA rms when used with a 0.5 pF detector

Contextual Info: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR Table of Contents1. 2. 3. 4. 5. 6. 7. 8. GENERAL DESCRIPTION . 4 FEATURES . 4

A1833

Contextual Info: Advance‡ 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 banks MT46H256M16L2 – 32 Meg x 16 x 4 banks x 2 MT46H64M32LF – 16 Meg x 32 x 4 banks MT46H128M32L2 – 16 Meg x 32 x 4 banks x 2 MT46H256M32L4 – 16 Meg x 32 x 4 banks x 4

Contextual Info: July 2007 HYB18M256320CFX–7.5 HYE18M256320CFX–7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM Data S heet Rev.1.03 Data Sheet HY[B/E]18M256320CFX–7.5 256-Mbit DDR Mobile-RAM HYB18M256320CFX–7.5, HYE18M256320CFX–7.5 Revision History: Rev.1.03, 2007-07

MT46H64M16

Abstract: 6S55 MT46H64M16LF
Contextual Info: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 Banks MT46H32M32LF – 8 Meg x 32 x 4 Banks Features Options • Vdd/Vddq – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)

s11 stopping compound

Abstract: DEF01
Contextual Info: 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)

Contextual Info: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF– 8 Meg x 16 x 4 banks MT48H16M32LF – 4 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/mobile Table 1: Features

MT46H128M16

Abstract: MT46H128M16LF MT46H64M32LF MT46H128 MT46H128M32L2 MT46H256M32 MT46H64M32 MT46H128M MT46H128M16L 240-ball
Contextual Info: 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4

circuit diagram of ddr ram

Abstract: HYB18M1G320BF
Contextual Info: March 2007 HYB18M 1G 320 B F– 7 . 5 HYE18M 1G 320 B F– 7 . 5 DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM RoHS compliant Data S heet Rev.1.00 Data Sheet HY[B/E]18M1G320BF 1-Gbit DDR Mobile-RAM HYB18M1G320BF–7.5, HYE18M1G320BF–7.5, Revision History: 2007-03, Rev.1.00

AC10

Abstract: YA28 AB89 AC89 STM-16 YA18 8AC10 Post amplifier Nortel OC-48 amplifiers
Contextual Info: Data Sheet AC10 2.5 Gb/s Post Amplifier with Automatic Gain Control Features General description Single 3.3 V supply The Nortel Networks AC10 is an AGC amplifier aimed primarily at SONET OC-48 and SDH STM-16 systems. The device may be used in any Datacom application with input data rates up to

1 into 16 demultiplexer circuit diagram using 1 i

Abstract: 1 into 12 demultiplexer circuit diagram 1 into 16 demultiplexer circuit diagram ip 65 equipment qmv10 AB89 AC10 UT15 AC10 post amplifier YA18
Contextual Info: YA20 2.5 Gb/s 1:16 Demultiplexer Data Sheet Features Data and clock inputs accept differential CML signals at up to 2.5 Gb/s Internally generated divide-by-16 clock and deserialized data delivered via PECL 100 k outputs Fully differential internal logic for

ELPIDA lpddr

Abstract: 1GB-x16 samsung lpddr LPDDR2 SDRAM samsung MT46H64M16LF cross infineon power cycling
Contextual Info: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)

1 into 16 demultiplexer circuit diagram using 1 i

Abstract: 1 into 12 demultiplexer circuit diagram Nortel demux AB89 AC10 YA08 YA18 YA19 YA20 1 into 4 demultiplexer circuit diagram
Contextual Info: YA20 2.5 Gb/s 1:16 Demultiplexer Data Sheet Features Data and clock inputs accept differential CML signals at up to 2.5 Gb/s Internally generated divide-by-16 clock and deserialized data delivered via PECL 100 k outputs Fully differential internal logic for

8C710

Abstract: 7111-C
Contextual Info: 1 1 1 1 1 1 1 234562781 1 1 1 1 AEF8C812 58 9 9 9 ABCDE9759F7E9 9

Contextual Info: Preliminary‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)

a4503

Abstract: A8063C
Contextual Info: A-BASE The ANTENEX’ “A-Base”style antenna offers a durable mount­ ing chassis that supports a wide range of rod styles, frequencies, and gain choices. The “A-Base” features rugged ABS body and a triple-chrome plated ferrule. The base contact is a highly reliable

SE1031

Abstract: SE1031W
Contextual Info: SE1031W LightCharger 2.5 Gb/s Transimpedance Amplifier LP Final Applications § § § § § Product Description SONET/SDH-based transmission systems, test equipment and modules OC-48 fibre optic modules and line termination ATM over SONET/SDH Gigabit Ethernet

a4503

Abstract: AB8965CTS A8965CT AB-150 AB8063 A4903 AB4503CS A4303C
Contextual Info: A-BASE BROAD BANDS & COLLINEARS The ANTENEX “A-Base” style antenna offers a durable mounting chassis that supports a wide range of rod styles, frequencies, and gain choices. The “A-Base” features rugged ABS body and a triple-chrome plated ferrule. The base contact is a highly reliable

Contextual Info: 512Mb: x16, x32 Automotive LPDDR SDRAM Features Automotive LPDDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks MT46H16M32LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 32 Meg x 16 8 Meg x 16 x 4 banks

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T67M

Abstract: ELPIDA mobile dram LPDDR2
Contextual Info: 512Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks MT46H16M32LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 32 Meg x 16 8 Meg x 16 x 4 banks

Contextual Info: Advance‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)

Contextual Info: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks Features Options • • • • • VDD/VDDQ – 1.8V/1.8V – 1.8V/1.2V1 • Configuration – 32 Meg x 16 8 Meg x 16 x 4 banks