AA35B Search Results

A1012

Abstract: Siemens S35 BUZ83A C67078-A1012-A3
Contextual Info: aûD » • aa35bQ5 o o m a io 88D 14810 D « sieù 7 “ ' 3 i? V / . B UZ 8 3 A SIEMENS AKTIENfiESELLSCHAF-Main ratings N-Channel Draln-source voltage Voa Continuous drain current Io Draln-source on-reslstance ^DS on 800 V 3,4 A 3,0 n

Contextual Info: aûD » • aa35bQ5 o o m a i o 88 D 14810 « sieù D . BUZ83A SIEMENS AKTIENfiESELLSCHAF-Main ratings N-Channel Draln-source voltage Vos Continuous drain current Io Draln-source on-reslstance ^DS on 800 V 3,4 A 3,0 n Description SIPMOS, N-channel, enhancement mode

SAB 82258

Abstract: sab82257
Contextual Info: 4 7E D Device Specifications • fiSBSbGS SIEI1ENS DD330S1 1 « S IE G AKTI ENGESELLSCHAF Preliminary T - « 3 - 3 3 - l et SAB 82257 High-Performance DMA Controller for 16-Bit Microcomputer Systems SAB 82257 SAB 82257-6 8 MHz 6 MHz • • • • 16 Mbytes addressing range

SDA5241

Abstract: sda 5241 a5006 sda 5231-2 sync STT 3 SIEMENS
Contextual Info: SIE D • fl53SbG5 DD441S2 TT4 « S I E G S IE M E N S - c - - n ~ c > - t- i3 SIEMENS AKTIENGESELLSCHAF SD A 5231-2 Data Slicer for Teletext Bipolar IC Preliminary Data Features • Crystal-stable data clock regeneration for a bit rate of 6.9375 MHz • Separation and regeneration of teletext infor­

Contextual Info: SIEMENS Silicon Switching Diode Array SMBD 6100 • For high-speed switching applications • Common cathode Type Marking Ordering Code tape and reel SMBD 6100 s5B Q68000-A8438 Pin Configuration Package1) 3 SOT-23 K3 ° EKA0700» Maximum Ratings Parameter

Contextual Info: — SPD 08N05L I nf i ne on technologies im p f° v e d SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage VDS 55 • Enhancement mode Drain-Source on-state resistance ^DS on 0.1 Q • Avalanche rated Continuous drain current

Contextual Info: SIEMENS BTS 630 PWM Power Unit The device allows continuous power control for lamps,LEDs or inductive loads. • Highside switch • Overtemperatur protection • Short circuit / overload protection through pulse widt reduction and overload shutdown • Load dump protection

KDS 7c

Abstract: A3116 DIODE S45 C67078-A3116-A2 156* diode
Contextual Info: flêD D SIEMENS • fl23Sb05 0Q1SQ0& h M S I E G AKTIENGESELLSCHAF T ' ' 3 ^ ,* 7 3 Main ratings BUZ 348 N-Channel Drain-source voltage Continuous drain current Drain-source on-resistance Description Case _ K>s h ^DS on = 50 V - 39 A = 0,04: SIPMOS, N-channel, enhancement mode

Contextual Info: SIEMENS BYP100 Preliminary data FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type Vrrm BYP 100 1000V fcRMS 8A frr Package Ordering Code 55ns TO-218AD C67047-A2254-A2 Maximum Ratings Parameter Symbol Mean forward current Unit

d880

Contextual Info: flêD D • fl2 3 S b 0 5 0Q1SQ0& h M S I E G SIEMENS AKTIENGESELLSCHAF T ' ' 3 ^ ,* 7 3 Main ratings BUZ 348 N-Channel Drain-source voltage Continuous drain current Drain-source on-resistance Description Case _ K>s h ^D S o n = 50 V - 39 A = 0,04: SIPMOS, N-channel, enhancement mode

2f5 transistor

Abstract: Transistor BFT 99 TIC 122 Transistor 2SC 2090 Transistor BFT 44 U/25/20/TN26/15/850/BFT75
Contextual Info: a s c ì> • a23SbOS 0004?13 S » S I E G T - ti- n BFT 75 NPN Silicon RF Broadband Transistor - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 23 6 plastic package 23 A 3 DIN 41869 , intended fo r use in low-noise input and intermediate stages in RF

T60403-L4021

Abstract: function of lts 543 ic OB35 ltp250 T1605 vogt 543 VOGT B1 65495
Contextual Info: PEB 2084 Revision History: Current Version: Data Sheet 07.95 Previous R eleases: Preliminary Technical Manual 2 .9 4 Subjects major changes since last revision P age P age (in previous (in current Version) Version) 11 8 Figure 1, ID O = Output and Input

LT 450 mbr

Contextual Info: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30Hz and 15 kHz • Complementary types: BC 856 W, BC 857 W,

Contextual Info: SIEMENS ICs for Communications LNA/MIXER P M B 2332 Version 1.2 Preliminary Specification 06.96 T2332-XV12-P2-7600 053SbO S 0 C H flb 4 3 7bfc> E d itio n 06 .96 A u s g a b e 06 .9 6 P u b lis h e d b y S ie m e n s A G , B e re ic h H a lb le ite r, M a rk e tin g K o m m u n ik a tio n , B ala n s tra B e 73,

SIEMENS rwc 62

Abstract: Q67100-Q1029
Contextual Info: SIEM E N S 4M X 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 514100BJ/BJL -50/-60/-70 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 ”C operating temperature • Fast Page Mode Operation • Performance: -50 -60 ¿RAC

YD317

Abstract: YC133 ZB6-Y009 YC128 YC219 YC311 YD340 yc424 YC317 YD31
Contextual Info: Control and Signaling Diameter 16mm XB6 / ZB6 Catalog February 2004 Control and signalling units Ø 16 General Harmony style 6 Pushbuttons, switches and pilot lights with double insulated bezel Description The Ø 16 range of double insulated control and signalling units comprises:

BFT66

Abstract: BFT 66 S1 Q62702-F456 nf5102 6NF20 BA 758 BFT67 Q62702-F457 QQQM710
Contextual Info: asc » â23SbüS ÜGGM7Qâ 1 M S I E â BFT 66 BFT 67 Extremely Low Noise NPN Silicon Broadband Transistors r l_r SIEMENS AKTIENGESELLSCHAF BFT 6 6 and BFT 6 7 are epitaxial NPN silicon planar RF transistors in TO 7 2 case 1 8 A 4 DIN 4 1 8 7 6 ), intended for input stage applications in extremely low-noise broadband

ZO 607 MA 7A 523

Abstract: cmo 765 transistor zo 607 MA 7S ZO 607 MA 7A 524 CM 1241 siemens Ka2 transistor BFQ 270 ZO 607 transistor BFQ82 Q62702-F1189
Contextual Info: SIEMENS NPN Silicon RF Transistor B F Q 82 • For low-noise, high-gain amplifiers up to 2 GHz. • Linear broadband applications at collector currents up to 40 mA. • Hermetically sealed ceramic package. • /t = 8 GHz F = 1.1 dB at 800 MHz ESD : Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P.1dB = +19dB m at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f j = 24 GHz • Gold metalization for high reliability

1377B

Contextual Info: Consumer Electronics SAT Mixer-Oscillator-PLL TUA6110XS Data Sheet 16.6.99 V02 fl23Sb05 0137753 05=1 • Edition 16.02.98 Published by Infineon AG iGr, Marketing-Kommunikatlon, Balanstr. 73, 81541 Munich Infineon AG iGr 1999. All Rights Reserved. Attention please!

AF379

Abstract: transistor D 379 AF 379 Q62701-F72 5C p Germanium power CE013
Contextual Info: 2SC D • ÖS3SbD5 0QQ4QÔS 5 « S I E G T - 3t~ O f PNP Germanium RF Transistor AF 379 - SIEMENS AKTIENßESELLSCHAF -for large sig n a l a p p lica tio n s u p to 9 0 0 M H z A F 3 7 9 is a PN P germanium planar RF transistor in 5 0 B 3 DIN 4 1 8 6 7 plastic package

Contextual Info: SIEM ENS A udio R inging C odec Filter B asic Function A R C O FI-B A Version 1.1 1.3 PSB 2161 BICMOS Features • Applications in digital terminal equipment featuring voice functions • Digital signal processing performs all CODEC functions • Fully compatible to the ITU-T G. 712 and ETSI

ft66

Abstract: BFT66
Contextual Info: ZSC D • fl23SbüS ÜGGM7Qä 1 « S I E G Extremely Low Noise NPN Silicon Broadband Transistors , Kr n/. 8 D ~ T -it'/r BFT 66 BFT 67 SIEMENS AKTIENGESELLSCHAF BFT 66 and BFT 67 are epitaxial NPN silicon planar RF transistors in TO 7 2 case 18 A 4 DIN 4 1 8 7 6 , intended for input stage applications in extremely low-noise broadband

BC 247 b transistor

Abstract: C558B transistor BC 247 transistor BC 245 bc 558 equivalent bc560 bc556b equivalent BC 247 Transistor - BC 547, CL 100 transistor 557 b
Contextual Info: - 25C D • Ô235b05 O O O m ^ b □ H S I E 6 - Q PNPSiliconTransistors B C 5 5 6 -B C 5 6 0 ' SIEMENS AKTIENGESELLSCHAF- 2 % - 2 . 1 for AF input and driver stages BC 556, BC 557, BC 558, BC 559, and BC 560 are epitaxial PNP silicon Planartransistors in