A70 8 PIN IC Search Results

Contextual Info: P R E LIM IN A R Y DATA SH EE T_ MOS INTEGRATED CIRCUIT MC-45V16AD641 16M-WORD BY 64-BIT VIRTUAL CHANNEL SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-45V16AD641 is a 16,777,216 words by 64 bits virtual channel synchronous dynam ic RAM module on which

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-45V8AB641KS 8M-WORD BY 64-BIT VIRTUAL CHANNEL SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM D e scriptio n The M C -45V 8A B 641 KS is an 8 ,3 8 8 ,6 0 8 w o rd s by 64 bits virtu a l ch a n n e l syn ch ro n o u s d yn a m ic RAM m odule (sm all

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-45V8AD641KS 8M-WORD BY 64-BIT VIRTUAL CHANNEL SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM D e scriptio n The M C -45V 8A D 641 KS is a 8 ,3 8 8 ,6 0 8 w o rd s by 64 bits virtu a l ch a n n e l syn ch ro n o u s d yn a m ic RAM m odule (sm all

IC MARKING A60

Abstract: 7KD MARKING marking B44
Contextual Info: b42752S 00421flb 3fi7 M N E C E MOS INTEGRATED CIRCUIT /¿PD42 S 16400 L, 42 S 17400 L 16 M B IT D Y N A M IC RA M 3 .3 V F A S T P A G E M O D E PRELIM IN ARY IDESCRIPTIO N The NEC u PD42S16400L and u PD42S17400L are 4 194 304 words by 4 b its dynamic CMOS RAM

LA80P

Abstract: marking 80L
Contextual Info: b427525 0042407 Tbb « N E C E MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 8 0 L , 4 2 S 1 7 1 8 0 L , 4 2 S 1 8 1 8 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O DE & BYTE R E A D /W R IT E M O DE -PRELIMINARY-DESCRIPTION The NEC ^PD42S16180L, u PD42S17180L and n PD42S18170L are 1 048 576 words by 18 b its

PD42S

Contextual Info: b427525 GQ4HSbT TEI « N E C E MOS INTEGRATED CIRCUIT jtiP D 4 2 S 1 6 1 9 0 L , 4 2 S 1 7 1 9 0 L , 4 2 S 1 8 1 9 0 L 16 M B IT D Y N A M IC RA M 3 .3 V FA ST P A G E M O D E & B Y T E W R IT E M O D E P R E LIM IN A R Y -D E S C R IP T IO N The NEC n PD42S16190L. ^ PD42S17190L and // PD42S18190L a re 1 048 576 words by 18 b i t s

Contextual Info: FLASH MEMORY 8 M 1M x 8/512 K x 16 BIT CMOS MBM29 DL800TA-70 - /M B M29 DL800BA-70/-90 -12 90/-1 2 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Sim ultaneous operations Read-while-Erase or Read-while-Program

Contextual Info: 128K x 32 FLASH MODULE mosaic semiconductor, inc. PUMA 68F4006/A-70/90/15 11403 W est Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Issue 4.2 : November 1998 Fax No: (619) 674 2230 Description The PUMA 68F4006 is a 4Mbit CMOS 5V Only

Contextual Info: 512K x 32 FLASH MODULE PUMA 68F16006/A-70/90/12/15 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0 191 2930500 Fax. +44 (0) 191 2590997 Description The PUMA 68F16006 is a high density 16Mbit CMOS 5V Only FLASH memory module in a

Contextual Info: 512K x 32 FLASH MODULE PUMA 68F16006/A-70/90/12/15 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0 191 2930500 Fax. +44 (0) 191 2590997 Description The PUMA 68F16006 is a high density 16Mbit CMOS 5V Only FLASH memory module in a

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20860-3E FLASH MEMORY B lB 8 M 1 M X 8 /5 1 2 K X 1 6 B IT MBM29DL300TA-?om-i!/MBM29DL800BA-70/-90/-12

68F4006

Contextual Info: 128K x 32 FLASH MODULE PUMA 68F4006/A-70/90/15 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Description The PUMA 68F4006 is a 4Mbit CMOS 5V Only FLASH memory in a JEDEC 68 pin surface mount PLCC, with read access times of 70, 90, and

29DL800TA

Abstract: 29DL800BA 29dl800b fujitsu 29dl800 29DL800BA -90
Contextual Info: FLASH MEMORY 8M 1M x 8/512K x 16 BIT CMOS M BM29 DL800TA-70/-90/-12/M BM29 DL800BA-70/-90/-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Simultaneous operations Read-while-Erase or Read-while-Program

Contextual Info: November 1990 Edition 3.0 FUJITSU DATA SHEET : MB81C1001A-60/-70/-80/-10 CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM The Fujitsu M B81C 1001A is a CM OS, fully decoded dynam ic RAM organized as 1,048,576 w ords x 1 bit. The M B81C 1001A has been designed fo r mainfram e

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-45V8AD64S 8M-WORD BY 64-BIT VIRTUAL CHANNEL SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-45V8AD64S is a 8,388,608 words by 64 bits virtual channel synchronous dynamic RAM module (small

TH3064

Contextual Info: P R E LIM IN A R Y DATA SH EE T_ MOS INTEGRATED CIRCUIT MC-45V8AB641 8M-WORD BY 64-BIT VIRTUAL CHANNEL SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-45V8AB641 is a 8,388,608 words by 64 bits virtual channel synchronous dynamic RAM module on which 8

a70 8 pin ic

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-45V8AB64S 8M-WORD BY 64-BIT VIRTUAL CHANNEL SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-45V8AB64S is a 8,388,608 words by 64 bits virtual channel synchronous dynamic RAM module (small

Contextual Info: b427525 0042323 TbS » N E C E f MOS INTEGRATED C IR CU IT H / P D 4 2 S 1 6 1 6 L , 4 2 S 1 7 1 6 L , 4 2 S 1 8 1 6 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O D E & BYTE R E A D /W R IT E M O DE -P R E L IM IN A R Y -D ESCRIPTIO N

Contextual Info: L Q G IQ L F 3347 High-Speed Image Filter with Coefficient RAM D E V IC E S IN C O R P O R A T E D TI0N_ □ 80 M H z D ata In p u t an d C o m p u ta­ tion Rate □ Four 12 x 12-bit M ultipliers w ith Individual D ata and Coefficient Inputs □ Four 256 x 12-bit Coefficient Banks

29lv800ta

Abstract: 29DL800BA
Contextual Info: FLASH MEMORY CMOS 8 M 1M x 8/512 K x 16 BIT M B M29 D L800TA-70/-90/-12 /M B M29 D L800B A-70/-90/-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Simultaneous operations Read-while-Erase or Read-while-Program

MSM5117400

Abstract: MSM5117400A
Contextual Info: O K I Sem iconductor MSM5 1 1 7 4 0 0 A_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400A is a 4,194,304-word x 4-bit dynam ic R A M fabricated in O K I's C M O S silicon gate technology. The MSM5117400A achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM51V16160A 1,048,576-Word x 16-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E DESCRIPTION The MSM51V16160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16160A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16160A is

MSM5116800A

Contextual Info: O K I Sem iconductor MSM5 1 1 6 8 0 0 A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPT IO N The MSM5116800A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116800A achieves high integration, high-speed operation, and low-power

D4242

Abstract: IC 741 cn
Contextual Info: b 4 E 7 5 2 S DOMEMOS T 2 D B i N E C E MOS INTEGRATED C IR CU IT / ¡P D 4 2 S 1 6 1 7 0 L ,4 2 S 1 7 1 7 0 L ,4 2 S 1 8 1 7 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O D E & BYTE W R ITE M O DE P R E LIM IN A R Y -DESCRIPTIO N The NEC u PD42S16170L, u PD42S17170L and