MBM29 Search Results

FPT-48P-M19

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are

MBM29F040

Abstract: FPT-32P-M24 MBM29F040C R095
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20842-4E FLASH MEMORY CMOS 4M 512K x 8 BIT MBM29F040C-55/-70/-90 • FEATURES • • • • • • • • • • • • Single 5.0 V read, program and erase Minimizes system level power requirements Compatible with JEDEC-standard commands

FPT-48P-M19

Abstract: FPT-48P-M20 mbm28f800 MBM28F800TA 77ff
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20841-4E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

Contextual Info: FLASH MEMORY CMOS 16 M 2 M x 8 / 1 M x 16 BIT MBM29LV160T-90-12/MBM29LV16 OB-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs

Contextual Info: FLASH MEMORY CMOS 4M 512K x 8 BIT MBM29F040C 70/-90 - • FEATURES • • • • • • • • • • • • Single 5.0 V read, program and erase Minimizes system level power requirements Compatible with JED EC-standard commands Uses same software commands as E2PROMs

MBM29BS64LF

Abstract: MBM29BS64LF-18 MBM29BT64LF-18
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20916-1E BURST MODE FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29BS/BT64LF-18/25 • GENERAL DESCRIPTION The MBM29BS/BT64LF is a 64M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 4M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20843-3E FLASH MEMORY CMOS 16M 2M X 8 BIT MBM29F017A-70/-90/-12 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash

29F400TC

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20851-4E FLASH MEMORY B lB 4M 512K X 8/256K x 16 BIT MBM29F400TC-55/-70/-90/MBM29F400BC-55/-70A90

Contextual Info: FLASH MEMORY CMOS 4M 512K x 8 BIT MB M29LV004T-1 2-x/MBM29LV004B-i 2-x • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

BGA-48P-M13

Abstract: FPT-48P-M19 FPT-48P-M20 MBM29LV160B-12PBT
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-6E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • GENERAL DESCRIPTION The MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are

FPT-48P-M19

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20906-1E FLASH MEMORY CMOS 16 M 2M x 8/1M × 16 BIT MirrorFlashTM* MBM29LV160TM/BM 90 • DESCRIPTION The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-1E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in

29DL32BF

Abstract: MBM29DL32
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF 70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V

LCC-40P-M02

Abstract: FPT-48P-M19 FPT-48P-M20 MBM29F017A SA28 SA29 SA30
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20843-1E FLASH MEMORY CMOS 16M 2M x 8 BIT MBM29F017A-90/-12 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

MBM29LV004B

Abstract: diode MARKING A9 diode MARKING CODE A9 LCC-40P-M02 fujitsu part ordering guide 2M256 Fujitsu TOP SIDE MARKING MBM29LV002B
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20835-3E FLASH MEMORY CMOS 2 M 256 K x 8 BIT MBM29LV002T-12-X/MBM29LV002B-12-X • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

SA612

Abstract: LCC-40P-M02 MBM29LV002B
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20827-3E FLASH MEMORY CMOS 2M 256K x 8 BIT MBM29LV002T-10/-12/MBM29LV002B-10/-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

FPT-48P-M19

Abstract: FPT-48P-M20 SA10 SA11 SA12
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20848-1E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LL800T-15S/MBM29LL800B-15S • FEATURES • Voltage range (2.2 V to 2.7 V) for read, program and erase Minimizes system level power requirements

A039h

Abstract: 3A400
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.

Contextual Info: PRELIMINARY MARKETING REQUIREMENTS DOCUMENT AE0.1E FLASH MEMORY CMOS 16M 2M x 8 BIT MBM29F017E 70/90/12 • FEATURES • 0.23 µm Process Technology • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

Contextual Info: MBM29F400TC-90PFTN 1/2 IL08 4 M (524,288 x 8/262,144 x 16)-BIT FLASH MEMORY —TOP VIEW— 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 PIN NO. I/O SIGNAL 1 2 3 4 5

Contextual Info: MBM29LV400T-10PFTN 1/2 IL08 4 M (512 K x 8/256 K x 16)-BIT FLASH MEMORY —TOP VIEW— A15 IN 1 48 A16 IN1 A14 IN 2 47 A13 IN 3 46 GND A12 IN 4 45 DQ15/A-1 I/O A11 IN 5 44 DQ7 I/O A10 IN 6 43 DQ14 I/O A9 IN 7 42 DQ6 I/O A8 IN 8 41 DQ13 I/O BYTE IN NC 9 40 DQ5 I/O