PD42S17180L Search Results

LA80P

Abstract: marking 80L
Contextual Info: b427525 0042407 Tbb « N E C E MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 8 0 L , 4 2 S 1 7 1 8 0 L , 4 2 S 1 8 1 8 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O DE & BYTE R E A D /W R IT E M O DE -PRELIMINARY-DESCRIPTION The NEC ^PD42S16180L, u PD42S17180L and n PD42S18170L are 1 048 576 words by 18 b its

LE347

Abstract: toba Q 0265 R HS 8180 42S18180
Contextual Info: L427S2S DQ4 2 4 M4 b 70 • NECE MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 8 0 ,4 2 S 1 7 1 8 0 ,4 2 S 1 8 1 8 0 16 M BIT D Y N A M IC RAM FAST PAGE M O D E & BYTE R E A D /W R IT E M ODE - P R E LIM IN A R Y -D ESCRIPTIO N

6623A

Contextual Info: 4k / X V * fjPD421x180/L, 42S1x180/L x = 6, 7, 8 1,048,576 x 18-Bit Dynamic CMOS RAM [M IL V NEC Electronics Inc. Description Fo r th e 4 2 1 7/4 2 S 1 7, RAS o n ly refresh cy cles a n d n o rm al re a d or w r ite cy cles on th e 2 0 4 8 a d d re s s c o m b in a tio n s

Contextual Info: b427525 0042323 TbS » N E C E f MOS INTEGRATED C IR CU IT H / P D 4 2 S 1 6 1 6 L , 4 2 S 1 7 1 6 L , 4 2 S 1 8 1 6 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O D E & BYTE R E A D /W R IT E M O DE -P R E L IM IN A R Y -D ESCRIPTIO N

5M21

Contextual Info: 4 k /X V * Í \ £ W NEC Electronics Inc. íiPD421x180/L, 42S1X180/L x = 6, 7, 8 1,048,576 x 18-Bit Dynamic CMOS RAM Description The devices listed below are fast-page dynam ic RAMs organized as 1M words by 18 bits and designed to o perate from a single power supply. O ptional features