A7 VC 23 Search Results

EDH411MN-10

Abstract: EDH411MN-12 EDH411MN-15
Contextual Info: Electronic Designs ln< - ' . EDH411MN-10/12/15 . < ^ ^ \ s v • -» •» V \ ' »v • PINOUTS VC C RASO DOUT A3 A6 □ IN WE RÂS1 AO A7 A8 C AS RAS2 c C C c c c C 8 c 9 c 17 C 18 C vc c vss • C om m on D IN /D O U T lines w ith separate RAS co ntro l

suss Instruments

Abstract: D3501 SN74ALS2238 gba 2674
Contextual Info: SN74ALS2238 32 x 9 x 2 ASYNCHRONOUS BIDIRECTIONAL FIRST-IN FIRST-OUT MEMORY D3501, APRIL 1990 N PACKAGE TOP VIEW Independent Asychronous Inputs and Outputs Bidirectional 30 R lT B DBF BO B1 B2 GND B3 B4 B5 B6 GND VCC 12 29 Vc c A7 A8 LDCKA FULLA UNCKB EMPTYB

MCM68A364

Abstract: 68a308 a1718 MCM68A332 kbyte 68A316E
Contextual Info: Vßfl A ID CS 00 D1 D2 03 AO A1 A2 A3 v ss 4 1 - 2 - 3 - 4 5 - 6 7 - ß -i 5 10 w m M r M l "I 23 22 21 20 19 IB V 16 IS H 13 ¥cc A7 1 24 I VüD A6 / A9 A8 A? A5 A4 A3 A? 3 04 C5 r A? 23 Vc< Ac 22 A9 A5 21 A 12 A4 20 1 A3 19 - A 10 A2 1 p 18 - A11 AI 06 AO

Contextual Info: ADE-203-234B Z HM628128B Series 131,072-word x 8-bit High Speed CMOS Static RAM Rev. 2.0 March 20, 1995 HITACHI The Hitachi HM628128B is a CMOS static RAM organized 131,072-word x 8-bit. It realizes higher density, h igher perform ance and low pow er consum ption by em ploying 0.8 pm Hi-CMOS

k0247

Abstract: KS6078 811ks Solar power bank calculator chip 48QFP a616b6 RM 40 pin LCD 4 digit KS6129 KS6525
Contextual Info: APPLICATION GUIDE 8. CALCULATOR APPLICATION 8.1 KS6225: mirror type of KS6325 A. For use with a solar cell M Q |— —* ZS •_! C 1— I 3 .!_ ! .1 . U . 1— •• .L _ .1 I r b3 c3 a4 b4 C4 a5 b5 c5 a6 b6 c6 a7 24 23 22 21 20 19 18 17 16 15 14 13 12 25

63C159

Abstract: 74HC14T P14DB se216 4HC14 bt 338 29C322 ti122 TC1628 CA20B
Contextual Info: 3 CPU RST # HD#[0.63] VCCT R64 5 56 .2 _1% B PR I# RS#0 HD#0 HD#1 HD#2 HD#3 HD#4 HD#5 HD#6 HD#7 HD# 8 HD#9 HD#10 HD#11 HD#12 HD#13 HD#14 HD#15 HD#16 HD#17 HD#18 HD#19 HD#20 HD#21 HD#22 HD#23 HD#24 HD#25 HD#26 HD#27 HD#28 HD#29 HD#30 HD#31 HD#32 HD#33 HD#34

2364A

Contextual Info: D e | 7flllD73 □□llflfll 7 f~ ROCKWELL INTL/ SC PDTS 7811073 ROCKWELL INTL, SC 62C 1 1889 PDTS D T ' + 6 ' I 3 ’J 5 Ì R2364A Memory Producta « I * Rockwell R2364A 64K 8K X 8 STATIC ROM DESCRIPTION E/E The R 2364A 2, R 2364A 25 and R 2364A 3 are 65,536-bit static

Pin100

Abstract: SK-96380 6110R
Contextual Info: D C B A GND 1 C11 10n MCUVCC DVSS C9 10n DVCC DVSS C7 10n DVCC GND C5 10n MCUVCC 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 GND

Contextual Info: Very Low Power CMOS SRAM 256K X 8 bit BS62LV2006 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VC C operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 23mA Max. 2mA (Max.)

AMIS30663

Abstract: SK9633 sub-d 9 pin
Contextual Info: D C B A X20A 2x9 Header 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1 X20B 2 2x9 Header 3 4 5 6 7 8 9 MCUVCC 10 11 12 C5 13 10n 14 15 GND 16 17 18 1 2 MCUVCC 3 4 5 C11 6 10n 7 8 GND 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32

MP 130B

Abstract: MP 130B 00 TL 650 ht
Contextual Info: P r e l im in a r y P r o d u c t S p e c if ic a t io n Z86E30/E31/E40 Z8 4K OTP M ic r o c o n tr o ller FEA TU R ES Device ROM KB RAM* (Bytes) I/O Lines Speed (MHz) Z86E30 Z86E31 Z86E40 4 2 4 237 125 236 24 24 32 16 16 16 • Programmable OTP Options:

23c256

Abstract: A12C Hualon Microelectronics 23C256A 23C25
Contextual Info: HUALON MICROELECTRONICS EM E D • m MS^fiDMl 0000050 S 3~15' HM23C256/A 32K x 8 MASK ROM Features * * * * * * * * Three-state outputs. * 23C256 — Non power down version. _ — Two program m able c h ip selects CS . * 23C256A _ — Autom atic power down (CE).

Contextual Info: JHPD23C2000A 2,097,152-Bit Mask-Programmable CM OS ROM NEC NEC Electronics Inc. Description Pin Configuration Th e /¿PD 23C 2000A is a 2,097,152-bit ROM fabricated w ith C M O S siiicon-gate technology. This device is static in operation and can be organized as 131,072 w ords by

upD23C1001

Contextual Info: ¿/P D 23C 1001E 1 31 ,0 72 x 8 -B IT M A S K -P R O G R A M M A B LE c m o s ro m N E C Electronics Inc. Description Pin Configuration The /uPD23C1001E is a 131,072-word by 8-bit static ROM fabricated with CMOS silicon-gate technology. Designed to operate from a single -l-5-volt power

K4S5111632-U75

Abstract: TLE6250 MB91F46 lcd color monitor p15-1 RC39A GS 220P PIN160 TLE6250GV33 R38A-B r40b
Contextual Info: 2 3 4 5 6 7 Pin[1.176] 8 This part is not assembled ! J6A CON44 DB7 DB6 DB5 DB4 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 J4 14 13 12 11 10 9 8 7 6 5 4 3 2 1 MCUVCC5_1 Pin175

CD4016CN

Abstract: CD4016MW 10B3 CD4016C a7 P-CHANNEL cd4016cn datasheet CD4016CJ CD4016M CD4016MJ J14A
Contextual Info: CD4016M CD4016C Quad Bilateral Switch General Description The CD4016M CD4016C is a quad bilateral switch which utilizes P-channel and N-channel complementary MOS CMOS circuits to provide an extremely high ‘‘OFF’’ resistance and low ‘‘ON’’ resistance switch The switch will pass

Contextual Info: JUPD23C16000 16,777,216-Bit Mask-Programmable CMOS ROM NEC Electronics Inc. Pin Configuration Description T h e /JP D 23C 16000 is a w ith C M O S silic o n -g a te in o p e ra tio n an d has T T L -c o m p a tib le inputs 16,777,216-bit R O M fa b ric a te d

AHCT245

Abstract: SN54AHCT245 SN74AHCT245
Contextual Info: SN54AHCT245, SN74AHCT245 OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS S C LS 233E - O C TO BE R 1995 - R EVISED JU NE 1997 • EPIC Enhanced-Performance Implanted CMOS Process • High Latch-Up Immunity Exceeds 250 mA Per JESD 17 • • SN54AHC T245 . . . J OR W PACKAGE

54F776

Abstract: GDFP2-F28 GDIP1-T28
Contextual Info: Product specification Philips Semiconductors Military FAST Products Octal bidirectional latched pi-bus transceiver DESCRIPTION The 54F776 is an octal latched transceiver and is intended to provide the electrical interface to a high performance wired-OR bus. This bus has a loaded characteristic

RC39F

Abstract: MB91F469GB b20 p03 JP41 SW1S r40a Y20 100N MAX3232CSE T RC41E 512Kx32x4
Contextual Info: 1 2 3 4 5 6 7 8 J1A DB7 DB6 DB5 DB4 U1 J21 8 7 6 5 4 3 2 1 A 8 7 6 5 4 3 2 1 P00/D24-31 J3 8 8 7 7 6 6 5 5 4 4 3 3 2 2 1 1 P01/D16-23 J4 8 8 7 7 6 6 5 5 4 4 3 3 2 2 1 1 P02/D8-15 J5 8 8 7 7 6 6 5 5 4 4 3 3 2 2 1 1 MCU_Y13 MCU_Y12 MCU_Y11 MCU_W11 MCU_V11 MCU_U11

Contextual Info: pPD23C4000A 4,194,304-Bit Mask-Programmable CMOS ROM NEC NEC Electronics Inc. Description Pin Configuration T h e /JP D 23C 4000A is a 4,194,304-bit ROM fa b ric a te d w ith C M O S silic o n -g a te technology. T h e d e v ic e is s ta tic in o p e ra tio n an d has th re e -s ta te o u tp uts, fu lly T T L c o m p a tib le in puts an d outp uts, an d an o u tp u t e n ab le

N82S212

Abstract: 82S212 N82S212F S82S212 S82S212F
Contextual Info: BIPOLAR MEMORY DIVISION MAY 1982 2304-BIT BIPOLAR RAM 256 X 9 DESCRIPTION The organization of the 82S212 allows byte wide storage of data, including parity. Where parity is not required, the ninth bit can be used as a tag fo r each word stored. The 82S212 is ideal fo r scratch-pad, push­

74ABT651

Abstract: 74ABT651D 74ABT651N 74ABT651PW 74ABT652 74ABT652 Philips
Contextual Info: INTEGRATED CIRCUITS 74ABT651 Octal transceiver/register, inverting 3-State Product specification 1995 Feb 23 IC23 Data Handbook Philips Semiconductors PHILIPS PHILIPS 711002b 000700b 121 m \ This Material Copyrighted By Its Respective Manufacturer Product specification

93479ADC

Abstract: 93479ADMQB 93479ALMQB 93479DC 93479DMQB 93479LMQB E28A J22A 96755
Contextual Info: 93479 ZWÄ National ÉüA Semiconductor 93479 256 x 9-Bit Static Random Access Memory General Description Features The 93479 is a 2304-bit read/write Random Access Memo­ ry RAM , organized as 256 words by nine bits per word. It is ideally suited for scratchpad, small buffer and other applica­