2364A Search Results

4Kx8 rom ttl

Abstract: 2332 eprom 2332 rom 4k 2364A 4kx8 rom NCR Microelectronics Division 2332 rom accessing 4Kx8 rom 24 pin NCR2364A
Contextual Info: • • • • 2364A 64K BANK SELECTABLE ROM f 64K Mask Programmable ROM Organized as two-4Kx8 Banks Fully Static 5 Volt Operation Maximum Access Time . . . 450 ns • • • • JEDEC Standard Pin-Out Fully TTL Compatible Pin Compatible with 2332 Type ROMs

2364 eprom

Abstract: 2564 eprom eprom 2564 2364A 2364 prom EPROM 2364 2564 prom 2364 rom
Contextual Info: UM2364/A B K X 8 NUOS AOM ¡ 2 Features • ■ ■ • • ■ • UM 2364A —Autom atic power down CE ■ UM2364 — non power down version- programmable chip select- (CS) ■ Three-state outputs for w ire-O R expansion ■ EPRO M s accepted as program data input

2364A

Contextual Info: D e | 7flllD73 □□llflfll 7 f~ ROCKWELL INTL/ SC PDTS 7811073 ROCKWELL INTL, SC 62C 1 1889 PDTS D T ' + 6 ' I 3 ’J 5 Ì 2364A Memory Producta « I * Rockwell 2364A 64K 8K X 8 STATIC ROM DESCRIPTION E/E The R 2364A 2, R 2364A 25 and R 2364A 3 are 65,536-bit static

2564 eprom

Abstract: eprom 2564 UM2364 UM2364-1 UM2364-2 UM2364A UM2364A1 UM2364A-1 UM2364A-2 TI 2564 eprom
Contextual Info: UM2364/A 8 K X 8 NMOS ROM S E Features • U M 23 64A — A u to m a tic power do w n CE ■ U M 2364 — non pow er d o w n version’ — programmable chip select (CS) ■ Three-state o u tp u ts fo r w ire -O R expansion ■ 8192 x 8 B it organization

MK36000

Abstract: 2364A D2364AC d2364A
Contextual Info: o U < r tei NEC |2364A 8,192 X 8-BIT M ASK-PROGRAM MABLE NMOSROM NEC Electronics Inc. Revision 1 D e sc rip tio n Pin C o n fig u ratio n T h e n P D 2 3 6 4 A is a 6 5,536-bit R ead -o n ly M e m o ry utilizing N M O S silic o n gate technology. T h e d e v ice is static in oper­

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

2364A

Contextual Info: 2364A Memory Products 2364A 64K 8K X 8 STATIC ROM Rockwell DESCRIPTION E/E The 2364A2, 2364A25 and 2364A3 are 65,536-bit static Read-Only Memories (ROMs), organized as 8,192 eight-bit bytes, that offer maximum access times of 200, 250 and 300 nano­

Contextual Info: UNITED MICROELECTRONICS =¡2 9325812 U N I T E D M IC RO E L E C T R O N I C S UM2333 JT Ô Ë J T32SÛ12 Q0Q0S20 G 92D 00520 D y = ’^ ~ / 3 ~ / S ' 4Kx8 Read Only Memory FEATURES PIN CONFI GURAT IO N • Access Tim e 2 0 0 /3 0 0 /4 5 0 ns M ax. ■ Single + 5 V ± 5% Power Supply

SEM 5027A

Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES

X2816

Abstract: 6502 CPU architecture block diagram TF 6221 HEN LED display rm65 Seiki STP H 200 R6530 hall marking code A04 vacuum tube applications data book National Semiconductor Linear Data Book Futaba 9 bt 26
Contextual Info: $5.00 1984 DATA B O O K Second Edition Rockwell International Semiconductor Products Division Rockwell International Corporation 1984 All Rights Reserved Printed in U.S.A. Order No. 1 March, 1984 Rockwell Semiconductor Products Division is headquartered in Newport Beach,