A63 TRANSISTOR Search Results

TRANSISTOR A63

Contextual Info: WJ-A63/SMA63 5 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 3.0 dB TYP. MEDIUM THIRD ORDER I.R: +15 dBm (TYR) HIGH GAIN: 16 dB (TYP.) Specifications* Outline Drawings A63 0.460 r , (11.41) Guaranteed Typical

pt 100 - to92

Abstract: pt 100 to92 MPS-A63 MPS-A64 MPSA63
Contextual Info: G Ql E SOLID STATE 3875081 G E SOLID STATE Signal Transistors_ DE § 3û750âl □G17tn G 01E 17990 1 D _ 2.7 MPS-A63, MPS-A64 Silicon Darlington Transistors TO-92 The GE/RCA MPS-A63 and A64 are planar epitaxial passivated PNP silicon Darlington transistors designed for preamplitier input applications where high im pedance is a

TRANSISTOR A63

Contextual Info: Cascadable Amplifier 5 to 1000 MHz A63/ SMA63 V3 Features Product Image • LOW NOISE: 3.0 dB TYP. • MEDIUM THIRD ORDER I.P.: +15 dBm (TYP.) • HIGH GAIN: 16 dB (TYP.) Description The A63 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance

TRANSISTOR A63

Abstract: a63 TRANSISTOR SMA63 CA63
Contextual Info: A63 / SMA63 Cascadable Amplifier 5 to 1000 MHz Rev. V3 Features Product Image • LOW NOISE: 3.0 dB TYP. • MEDIUM THIRD ORDER I.P.: +15 dBm (TYP.) • HIGH GAIN: 16 dB (TYP.) Description The A63 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance

Contextual Info: A63/SMA63 5 TO 1000 MHz CASCADABLE AMPLIFIER • LOW NOISE: 3.0 dB TYP. · MEDIUM THIRD ORDER I.P.: +15 dBm (TYP.) · HIGH GAIN: 16 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 12/00)* Characteristics Typical Frequency Small Signal Gain (min.)

TRANSISTOR A63

Abstract: SMA63 diode a63 CA63 a63 TRANSISTOR
Contextual Info: A63/SMA63 5 TO 1000 MHz CASCADABLE AMPLIFIER • LOW NOISE: 3.0 dB TYP. · MEDIUM THIRD ORDER I.P.: +15 dBm (TYP.) · HIGH GAIN: 16 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 12/00)* Characteristics Typical Frequency Small Signal Gain (min.)

WJ-A63

Abstract: bc 162 transistor Transistor BC 227 WJ-CA63 wjca63
Contextual Info: uuJ A63 / SMA63 5 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 3.0 dB TYP. MEDIUM THIRD ORDER I.R: +15 dBm (TYP.) HIGH GAIN: 16 dB (TYR) • ¡■ B B lM g g » » miKKKtM Specifications* Characteristics Outline Drawings

Contextual Info: Product Description Stanford Microdevices’ SGA-6386 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases

A6331

Contextual Info: Product Description Stanford Microdevices’ SGA-6389 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases

TRANSISTOR A63

Abstract: 5894 A63 marking amplifier DC-3000 SGA-6386
Contextual Info: Product Description Stanford Microdevices’ SGA-6386 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases

TRANSISTOR A63

Abstract: EDS-100620 SGA-6389 a63 TRANSISTOR
Contextual Info: Product Description Stanford Microdevices’ SGA-6389 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases

2SC42

Abstract: 2SC4252 Transistor MAV 1 kps6
Contextual Info: TO SH IBA 2SC4252 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4252 Unit in mm TV TUNER, VHF OSCILLATOR APPLICATIONS COMMON COLLECTOR 2.1 ¿ 0 . 1 • Transition Frequency is High and Dependent on Current Excellently. 1 .25Ì0.1 in ID o MAXIMUM RATINGS (Ta = 25°C)

philips 3h1 ferrite material

Abstract: ferroxcube handbook old ferrite ferroxcube Ee core 3H1 ferroxcube philips ferroxcube 4c65 ferroxcube 3E1 3h1 ferrite material philips 3f3 ferrite philips 3f3 ferrite toroid philips p14/8 3h1
Contextual Info: PRODUCT SELECTION GUIDE 2001 A Y AG E O C O M PA N Y List of contents page This Selection Guide offers an overview of the product ranges made by FERROXCUBE It contains short-form data for quick selection by development engineers and offers an overview for

Selection Guide

Abstract: FERROXCUBE ferroxcube 31 toroid core SP 5001 IC INVERTER inverter ccfl SP 5001 IC INVERTER ferroxcube handbook old ferrite philips etd34 ferrite part number Rod 3B1 smooth l 7251 3.1 etd29 14 pin vertical bobbins
Contextual Info: PRODUCT SELECTION GUIDE 2003 A Y A G E O C O M P A N Y List of contents List of contents continued page page General introduction Application matrix 2 8 Power conversion and Signal processing Materials and applications Bobbins and accessories Integrated Inductive Components (IIC)

Contextual Info: SEMICONDUCTOR tm MPSA63 MMBTA63 PZTA63 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings TA = 25°C unless otherwise noted

TRANSISTOR A63

Abstract: sot23 A63 a63 TRANSISTOR MPSA63 MMBTA63 MPSA64 PZTA63
Contextual Info: MPSA63 MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.

Contextual Info: SEMICONDUCTOR tm MPSA63 MMBTA63 PZTA63 PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. See M PSA64 for characteristics. Absolute Maximum RâtinÇjS T A = 25°C unless o th e rw ise noted

TRANSISTOR A63

Abstract: sot23 A63 FAIRCHILD SOT-223 MARK MPSA64 MMBTA63 MPSA63 PZTA63
Contextual Info: S E M IC O N D U C T O R tm MMBTA63 SOT-23 PZTA63 B / PZTA63 TO-92 / MMBTA63 MPSA63 SOT-223 M a rk : 2U PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61.

a42e

Abstract: IC 7410 sot-89 A63 CZT900K npn 2907A 2222a A77 SOT23 2222ae A92E 3906 npn
Contextual Info: Small Signal Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless

a872 TRANSISTOR equivalent

Abstract: WJ-331240 WJ-A15 free transistor a7s wj331240 WJA9 WATKINS-JOHNSON CO WJA15 WJ PA15 A19F
Contextual Info: Application Information for Thin Film Cascadable Amplifiers INSIDE THE TO-8 AMPLIFIER: BASIC CIRCUIT CONCEPTS This discussion covers the basic circuit concept behind the cascadable amplifier and details some of the techniques that are used to maintain hardware stability in the

2SC4247

Contextual Info: TOSHIBA 2SC4247 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4247 Unit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON COLLECTOR • 2.1 ±0.1 Transition Frequency is High and Dependent on Current Excellently. MAXIMUM RATINGS (Ta = 25°C)

MPSA63

Abstract: TRANSISTOR A63 MMBTA63 MPSA64 PZTA63 Transistor MPSA63
Contextual Info: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

2u91

Abstract: MA62
Contextual Info: DEjb3b7B5M b4 M O T O R O L A SC Í X S T R S / R F> •*^ DDb7331 B | " T -29-29 .v. MOTOROLA M M A 6 2 v .*,^ j t M M A 6 3 W S E M I C O N D U C T P R S - -• -f-.P’i î . BOX 2Û912 • PHÖENIX, A R IZO N A 8503§ ; MEDIUM VOLTAGE PNP SILICON DARLINGTON TRANSISTORS

BOX70

Abstract: 71T2 PT7933 B0221 ESM3000 SS2022 b0220 74T2 Solitron
Contextual Info: POWER SILICON NPN Item Number Part Number Manufacturer Ic Max A (V) fT hFE V(BR)CEO Min Max (Hz) ICBO Max (A) t, Max tf Max (8) (8) PD Max (W) Toper Max (Oe) Package Style Additional Transistors, (Co nt' d) 5 10 B0221 B0221 B0221 2N1644 HSE912 ST403 B0795