A5A 103 Search Results

cea 141

Abstract: A5A 103 A5A 101 D4047
Contextual Info: 6 4 -b it C a c h e M o d u le A S 7 M 6 4 P Series Features Logic Block Diagram ♦ Pentium -ready 64-bit data path A 3A -A 6A • ♦ High speed: tAA= 10-20 ns ♦ Low Power - AO-3 A 07 -1 9 • A3B-A6B — » 4 0 -3 A 07-19 — * A4-16 A 4-16 CËÂ •

arcotronics 1.27

Contextual Info: ARCOTRONICS SMD - Film Capacitors PEN dielectric - LDE Series • General technical data Plates Winding Termination Marking Climatic category Aluminium layer deposited by evaporation under vacuum. Non inductive type - Stacked technology. Three layers: Aluminium, Brass and Tin alloy.

2SD103

Abstract: 2SD102 2SB502A 2SD102-R 2SD102-Y 2SD103-R AC74
Contextual Info: 2SD ' SILICON NPN DIFFUSED JUNCTION TRANSISTOR 2SD o o o o a DC — DC it X m æ INDUSTRIAL APPLICATIONS Audio Power Amplifier, Power Switching, DC-DC Converter and Regulator Applications. Unit in mm » » « E i W h S V ' : VCE eat — Q 5 V (Typ.) ^ ^ 9 ?

btb 137

Contextual Info: HI High- Performan ce 256/512/1024 KB vie 3.3V SRAM Module AS7M64f*3256 AS7M64P3512 AS7M64P31024 Low Voltage 256/512/1024 KByte Asynchronous Sit AM Module . PIN ARRANGEMENT FEATURES 80 pin dual-readout DIMM - Same pinout for 256/512/1024KB - Same pinout for burst mode 64B3256

Contextual Info: High-Performance 256/512/1024 KByte SRAM Module : AS7M64Ï*256 AS7M64P5Ï2 AS7M64PI024 WÊ 256/512/1024 KByte Asynchronous SRAM Module I PIN ARRANGEMENT FEATURES 80-pin dual-readout DIMM - Same pinout for 256/512/1024KB - Burst-mode control signals - No motherboard jumpers required

hy6264

Contextual Info: HY6264A-I Series •{HYUNDAI 8 K x 8-bit CMOS SRAM DESCRIPTION The HY6264A-I is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

nec 2761

Abstract: l021 IP276
Contextual Info: PRELIMINARY PRODUCT INFORMATION NEC MOS INTEGRATED CIRCUIT ELECTRON DEVICE _ , u P D 1 6 4 2 1 SOURCE DRIVER FOR 120-OUTPUT TFT-LCD CAPABLE OF ACCOMMODATING UP TO 8 TONES The /JPD16421 is a source driver for TFT-LCD and can accommodate up to 8 tones.

motorola l6 lcd

Abstract: 5555P
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview LCD Segment / Common Driver with Controller MC141598 CMOS MC141598 is a CMOS LCD Driver which consists of 133 high voltage LCD driving signals to drive either 100-Segment and 33-Common display or 99-Segment and 34Common display. It has 6800-series, 8080-series parallel interface and Serial Periph­

A13B

Abstract: DQ17A-DQ0A A14B DQ4a DQ11A
Contextual Info: July 2004 Preliminary Information AS9C25512M2018L 2.5V 512K X 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 524,288 x 18 bits

DQ20A

Abstract: A17a DQ18A be2a A13B
Contextual Info: July 2004 Preliminary Information AS9C25256M2036L 2.5V 256K X 36 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 262,144 x 36 bits

A17A

Abstract: A15A a17b diode A14A A11A A13A A14A AS9C25128M2036L AS9C25256M2036L be0b
Contextual Info: September 2004 Preliminary Information AS9C25256M2036L AS9C25128M2036L 2.5V 256/128K X 36 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 262,144/131,072 x 36[1]

A17a

Abstract: a17b A18B-A0B diode A14A A14A A15A A16A AS9C25256M2018L AS9C25512M2018L DQ17A
Contextual Info: September 2004 Preliminary Information AS9C25512M2018L AS9C25256M2018L 2.5V 512/256K X 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 524,288/262,144 x 18[1]

6116 SRAM

Abstract: IZ48
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256KB and 512KB BurstRAM Secondary Cache Module for Pentium™ The M C M 72B F32S G and M C M 72B F64S G are designed to provide a burstable, high perform ance, 256 K /51 2 K L2 cache fo r the Pentium m icroprocessor.

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information 256KB and 512KB BurstRAM Secondary Cache Module for Pentium™ The MCM72CF32SG and MCM72CF64SG are designed to provide a burstable, high performance, 256K/512K L2 cache for the Pentium microprocessor.

gx 6101 d

Abstract: CHE 6100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256KB and 512KB BurstRAM Secondary Cache Module for Pentium™ The M C M 72BB32SG and M C M 72BB64SG are designed to provide a burstable, high perform ance, 256 K /51 2 K L2 cache fo r th e Pentium m icroprocessor. The

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256KB and 512KB BurstRAM Secondary Cache Module for Pentium™ T h e M C M 72C B 32S G and M C M 72C B64SG are designed to provide a burstable, high perform ance, 256 K /51 2 K L2 cache fo r th e Pentium m icroprocessor.

C1B4

Abstract: cq51 c17f C01A MC68HC11E2 motorola mc 8602 258 c014 motorola cmos C100 microcontroller application 9704 258 c017
Contextual Info: Simple Interface for 68HC11 to MICROWIRE “Chip Security” EEPROMs Application Note 909 •■■■■■■■■■ SEMICONDUCTOR TM BRIEF OVERVIEW OF THE NM93CSxx FEATURES ABSTRACT Fairchild’s NM93 CSxx Family of serial EEPROMs offers sophis­ ticatedprotection against accidentaloverwrites from power surges,

Contextual Info: HY514100B Series “H Y U N D A I 4M X 1- b it CMOS DRAM DESCRIPTION The HY514100B is the new generation and fast dynam ic RAM organized 4,194,304 x 1-bit. The HY514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HY514100B Series •HYUNDAI 4M X 1-bit CMOS DRAM DESCRIPTION The HY514100B is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

MCM67B518

Abstract: MCM72BB32 MCM72BB64 Nippon capacitors
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256KB and 512KB BurstRAM Secondary Cache Module for Pentium The MCM72BB32SG and MCM72BB64SG are designed to provide a burstable, high performance, 256K/512K L2 cache for the Pentium microprocessor. The modules are configured as 32K x 72 and 64K x 72 bits in a 160 pin card edge

MCM67C518

Abstract: MCM67C618 MCM72CB32 MCM72CB64 Nippon capacitors
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256KB and 512KB BurstRAM Secondary Cache Module for Pentium The MCM72CB32SG and MCM72CB64SG are designed to provide a burstable, high performance, 256K/512K L2 cache for the Pentium microprocessor. The modules are configured as 32K x 72 and 64K x 72 bits in a 160 pin card edge

B14A equivalent

Abstract: zener b14a P6SBMJ24A B17C tvs2315pt TVSS5VESPT diode B14A B14A zener equivalent A17a P4SSMJ24A
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Test current Working Peak Reverse Voltage IZT(mA) Vrwm(V) Marking Min Nom Max Volts Volts Volts Maximum Maximum Maximum Reverse reverse Reverse

ICCA100

Abstract: 2CB32
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MCM72CB32 MCM72CB64 256KB and 512KB BurstRAM Secondary Cache Module for Pentium™ T h e M C M 72C B 32S G and M C M 72C B 64S G are designed to provide a burstable, high perform ance, 256 K /51 2 K L2 cache for the Pentium m icroprocessor.

MCM67C518

Abstract: MCM67C618 MCM72CF32 MCM72CF64 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MCM72CF32/D SEMICONDUCTOR TECHNICAL DATA Advance Information 256KB and 512KB BurstRAM Secondary Cache Module for Pentium MCM72CF32 MCM72CF64 160–LEAD CARD EDGE CASE 1113A–01 TOP VIEW 1 The MCM72CF32SG and MCM72CF64SG are designed to provide a burstable, high performance, 256K/512K L2 cache for the Pentium microprocessor.