A5A 101 Search Results

Contextual Info: Filter connectors Solder pin straight Socket connector Plug connector 00.6 Kat 1 i A5A Kat 1 i A6A A -0 .7 6 B + 0,25 C D - 0,30 9 31,19 16,79 25,00 +00f 3 6,12 33,30 ‘. qjo 15 39,52 25,12 6,12 38,50 47,04 ’ C13 25 53,42 38,84 33,30 *°0f 0 47,04 i 0 ,3

a1f45

Abstract: 8C414
Contextual Info: 1 Datasheet 9EF 2  2!F7"EFF#  9$%A5A$2 1 1 &F'"  1 1 1

cea 141

Abstract: A5A 103 A5A 101 D4047
Contextual Info: 6 4 -b it C a c h e M o d u le A S 7 M 6 4 P Series Features Logic Block Diagram ♦ Pentium -ready 64-bit data path A 3A -A 6A • ♦ High speed: tAA= 10-20 ns ♦ Low Power - AO-3 A 07 -1 9 • A3B-A6B — » 4 0 -3 A 07-19 — * A4-16 A 4-16 CËÂ •

btb 137

Contextual Info: HI High- Performan ce 256/512/1024 KB vie 3.3V SRAM Module AS7M64f*3256 AS7M64P3512 AS7M64P31024 Low Voltage 256/512/1024 KByte Asynchronous Sit AM Module . PIN ARRANGEMENT FEATURES 80 pin dual-readout DIMM - Same pinout for 256/512/1024KB - Same pinout for burst mode 64B3256

Contextual Info: High-Performance 256/512/1024 KByte SRAM Module : AS7M64Ï*256 AS7M64P5Ï2 AS7M64PI024 WÊ 256/512/1024 KByte Asynchronous SRAM Module I PIN ARRANGEMENT FEATURES 80-pin dual-readout DIMM - Same pinout for 256/512/1024KB - Burst-mode control signals - No motherboard jumpers required

nec 2761

Abstract: l021 IP276
Contextual Info: PRELIMINARY PRODUCT INFORMATION NEC MOS INTEGRATED CIRCUIT ELECTRON DEVICE _ , u P D 1 6 4 2 1 SOURCE DRIVER FOR 120-OUTPUT TFT-LCD CAPABLE OF ACCOMMODATING UP TO 8 TONES The /JPD16421 is a source driver for TFT-LCD and can accommodate up to 8 tones.

motorola l6 lcd

Abstract: 5555P
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview LCD Segment / Common Driver with Controller MC141598 CMOS MC141598 is a CMOS LCD Driver which consists of 133 high voltage LCD driving signals to drive either 100-Segment and 33-Common display or 99-Segment and 34Common display. It has 6800-series, 8080-series parallel interface and Serial Periph­

Contextual Info: Data Sheet No. PD-9.671A INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHF7110 IRHF811Q MEGA RAD HARD 100 Volt, 0.60ft, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown

A13B

Abstract: DQ17A-DQ0A A14B DQ4a DQ11A
Contextual Info: July 2004 Preliminary Information AS9C25512M2018L 2.5V 512K X 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 524,288 x 18 bits

NASA

Abstract: pdm 5001 til 31a 2N7262 IRHF7230 IRHF8230 H139 circuit at mega 32 H142 H149
Contextual Info: Data Sheet No. PD-9.672A INTERNATIONAL RECTIFIER Z O R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHF7S3Q IRHFS230 SN7S68 N-CHANNEL JAN SR 8N7S62 JANSHSN7S6S MEGA RAD HARD 200 Volt, 0.400, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs

beaglebone black

Abstract: KE4CN2H5A-A58 D2516EC4BXGGB NC107 MTFC4GLDEA
Contextual Info: A B C D C B A6A A6 1. Changed R46, R47,R48 to 0 ohms. 2. Changed R45 to 22 Ohms. Change was made due to production failures on some boards due to differences in impedances. A5C 5 4 THERE IS NO WARRANTY FOR THIS DESIGN , TO THE EXTENT PERMITTED BY APPLICABLE LAW. EXCEPT WHEN OTHERWISE STATED

DQ20A

Abstract: A17a DQ18A be2a A13B
Contextual Info: July 2004 Preliminary Information AS9C25256M2036L 2.5V 256K X 36 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 262,144 x 36 bits

A17A

Abstract: A15A a17b diode A14A A11A A13A A14A AS9C25128M2036L AS9C25256M2036L be0b
Contextual Info: September 2004 Preliminary Information AS9C25256M2036L AS9C25128M2036L 2.5V 256/128K X 36 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 262,144/131,072 x 36[1]

A17a

Abstract: a17b A18B-A0B diode A14A A14A A15A A16A AS9C25256M2018L AS9C25512M2018L DQ17A
Contextual Info: September 2004 Preliminary Information AS9C25512M2018L AS9C25256M2018L 2.5V 512/256K X 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 524,288/262,144 x 18[1]

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information 256KB and 512KB BurstRAM Secondary Cache Module for Pentium™ The MCM72CF32SG and MCM72CF64SG are designed to provide a burstable, high performance, 256K/512K L2 cache for the Pentium microprocessor.

512Kx1 DRAM

Contextual Info: HY51V4100B Series «HYUNDAI 4M X 1bit CMOS DRAM DESCRIPTION The HY51V4100B is the new generation and fast dynamic RAM organized 4,194,304x1-bit. The HY51V4100B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

55AX1000

Abstract: FP-1-35-G-10 FP-1-27-G-10 10A3500 10A35 A3600 1-GUSVT-610 A1B ABB 2-GSVT-48-A 2-GUSVT-410
Contextual Info: Variable Area Flowmeter, Glass Tube Models A3500 & A3600 Specification DataFile •■ Removable metering tube – for range changing or cleaning without removing meter from line ■■ External retaining spring and equal area ends on tube – prevents the tube moving under pressure,

gx 6101 d

Abstract: CHE 6100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256KB and 512KB BurstRAM Secondary Cache Module for Pentium™ The M C M 72BB32SG and M C M 72BB64SG are designed to provide a burstable, high perform ance, 256 K /51 2 K L2 cache fo r th e Pentium m icroprocessor. The

C1B4

Abstract: cq51 c17f C01A MC68HC11E2 motorola mc 8602 258 c014 motorola cmos C100 microcontroller application 9704 258 c017
Contextual Info: Simple Interface for 68HC11 to MICROWIRE “Chip Security” EEPROMs Application Note 909 •■■■■■■■■■ SEMICONDUCTOR TM BRIEF OVERVIEW OF THE NM93CSxx FEATURES ABSTRACT Fairchild’s NM93 CSxx Family of serial EEPROMs offers sophis­ ticatedprotection against accidentaloverwrites from power surges,

Contextual Info: HY514100B Series “H Y U N D A I 4M X 1- b it CMOS DRAM DESCRIPTION The HY514100B is the new generation and fast dynam ic RAM organized 4,194,304 x 1-bit. The HY514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HY514100B Series •HYUNDAI 4M X 1-bit CMOS DRAM DESCRIPTION The HY514100B is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

MCM67B518

Abstract: MCM72BB32 MCM72BB64 Nippon capacitors
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256KB and 512KB BurstRAM Secondary Cache Module for Pentium The MCM72BB32SG and MCM72BB64SG are designed to provide a burstable, high performance, 256K/512K L2 cache for the Pentium microprocessor. The modules are configured as 32K x 72 and 64K x 72 bits in a 160 pin card edge

MCM67C518

Abstract: MCM67C618 MCM72CB32 MCM72CB64 Nippon capacitors
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256KB and 512KB BurstRAM Secondary Cache Module for Pentium The MCM72CB32SG and MCM72CB64SG are designed to provide a burstable, high performance, 256K/512K L2 cache for the Pentium microprocessor. The modules are configured as 32K x 72 and 64K x 72 bits in a 160 pin card edge

ICCA100

Abstract: 2CB32
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MCM72CB32 MCM72CB64 256KB and 512KB BurstRAM Secondary Cache Module for Pentium™ T h e M C M 72C B 32S G and M C M 72C B 64S G are designed to provide a burstable, high perform ance, 256 K /51 2 K L2 cache for the Pentium m icroprocessor.