A554 Search Results

M38527

Abstract: a55485 M3852 .047n BV00-E101
Contextual Info: REV. C DESCRIPTION DATE 02/17/04 Engineering Update w/o Changes APPROVED M. C. H F Ø.045 [Ø1.1mm] 0.045 [1.1mm] TYP. TYP. 0.06 [1.5mm] TYP. 0.200 [5.1mm] 0.290 [7.4mm] 0.090 [2.3mm] PART NO. 330-050 330-072 330-085 Ø.090 [Ø2.3mm] A55485/06 M38527/06 -047N

c815

Abstract: U815 BS-A822RD BS-A551RD BS-A551RD-B BS-A552RD BS-A553RD BS-A554RD BS-A555RD BS-A555RD-B
Contextual Info: Part No. Digit Size 0.56" Single-Digit 0.56" Single-Digit 0.60" Single-Digit 0.80" Single-Digit 0.80" Overflow Single-Digit Common Anode Common Cathode BS-A551RD BS-A555RD BS-A555RE BS-A552RD BS-A553RD BS-C551RD BS-C555RD BS-C555RE BS-C552RD BS-C553RD BS-A554RD

Contextual Info: REV. C Ø.045 [Ø1.1mm] DESCRIPTION DATE Engineering Update w/o Changes 02/17/04 APPROVED M. C. H F 0.045 [1.1mm] TYP. TYP. 0.06 [1.5mm] TYP. 0.200 [5.1mm] 0.290 [7.4mm] 0.090 [2.3mm] PART NO. 330-050 330-072 330-085 Ø.090 [Ø2.3mm] A55485/06 M38527/06 -047N

IRFH350

Abstract: 412a L243 g602
Contextual Info: HE D § 4 A5545E GQCHtiEE 1 | Data Sheet No. PD-9.412A INTERNATIONAL R E C T I F I E R T - i T ‘ / 3 INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFH35Q N-CHANNEL POWER MOSFETs 400 Volt, 0.3 Ohm HEXFET Features: The HEXFET® technology is the key to International

BT-A554RD

Contextual Info: BRIGHT LED ELECTRONICS CORP. BT-A554RD SINCE 1981 ● Features : 1. 0.56 inch 14.20mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

BT-A554RD

Contextual Info: BRIGHT LED ELECTRONICS CORP. BT-A554RD SINCE 1981 ● Features : 1. 0.56 inch 14.20mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

BS-A554RD

Contextual Info: BRIGHT LED ELECTRONICS CORP. BS-A554RD SINCE 1981 ● Features : 1. 0.56 inch 14.2mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

BR17

Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

7813 Texas Instruments Transistor

Abstract: TMS320C6000 TMS320C6474 C6000 C6474 C64X DDR2-667 SPRS552H BR17
Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

transistor d880

Abstract: BR17
Contextual Info: TMS320C6474 www.ti.com SPRS552E – OCTOBER 2008 – REVISED APRIL 2010 TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

Contextual Info: 87C196LA-20 MHz CHMOS 16-bit Microcontroller Automotive Advanced Inform ation D atasheet Product Features • Up to 20 M Hz operation ■ 24 Kbytes o f on-chip OTPROM ■ Enhanced full-duplex, synchronous serial I/O port SSIO ■ 768 bytes o f on-chip register RAM

TS PQ4 12

Abstract: TS PQ4 24 ts pq4 10 TS PQ4 20 TS PQ4 120
Contextual Info: in y 1.0 80960HA/HD/HT About This Document This document describes the parametric performance of Intel’s 80960Hx embedded superscalar microprocessors. Detailed descriptions for functional topics — other than parametric performance — are published in the i960 H x M icroprocessor U ser’s Guide 272484 .

15-V

Abstract: DG417 DG417DJ DG417DY DG418 DG418DJ DG419 siliconix dg419dy
Contextual Info: Silicanix DG417/418/419 A M e m b e r o fth e T B M ic G ro u p Precision CMOS Analog Switches • • • • • • • Applications Benefits Features • • • • • • ± 15-V A nalog Signal R ange O n-R esistance— ros on : 20 Q Fast Switching A ction— toN* 100 ns

VNS009D

Abstract: VNS008D 001S03 VNT008D VNT009D
Contextual Info: 18E D SILICONIX INC • B254735 001502=1 fc, ■ VNT008D/9D, VNS008D/9D IX Sincorporated illconix JLM N-Channel Enhancement Mode Transistors TO-220AB TO P VIEW PRODUCT SUMMARY PART NUM BER V BR|DSS VNT008D O IDS(ON (il) (A) >D 650 1.5 5.77 VNS008D 600 1.5

Contextual Info: Features Datasheet RX64M Group Renesas MCUs R01DS0173EJ0100 Rev.1.00 Jul 31, 2014 120-MHz 32-bit RX MCU, on-chip FPU, 240 DMIPS, up to 4-MB flash memory, 512-KB SRAM, various communications interfaces including IEEE 1588-compliant Ethernet MAC, full-speed USB 2.0 with battery charging, SD host interface optional , quad SPI, and CAN, 12-bit A/D

M38527

Abstract: M38527/01-030N a55485 M38527/2-05D a55485/01 PA111 01-033N M38527/06-032N-.060
Contextual Info: perm-o-pads TO-18 and T-13/32 5mm LED Mounts and TO-18 Spreaders Material Specifications: White or Natural Nylon, per ASTM D4066 PA111, UL Rated 94V-2 Oxygen Rating Index: Over 28% Standard Drawing Tolerances: (unless otherwise indicated) Fractions: +_ 1/64 (0.4)

M38527

Abstract: 03-NL-BK 818-XXX
Contextual Info: REV. C DATE DESCRIPTION APPROVED 03/01/04 Engineering Update w/o Changes M. C. H REF. F 0.605 [15.4mm] 0.50 [12.7mm] 0.695 [17.7mm] 0.045 [1.1mm] Ø.035 [Ø0.9mm] 0.800 [20.3mm] W/ Ø .050 C'SINK TYP. 0.61 [15.5mm] 0.100 [2.5mm] TYP. 0.050 [1.3mm] 0.030 [0.8mm]

KD 2107

Abstract: A5515 A5568-01 A54450 PQFP 132 PACKAGE DIMENSION intel A5500-01 A5522-01 A5506 Intel 1702 eprom PACKAGE/MODULE/PC CARD OUTLINES AND DIMENSIONS
Contextual Info: Package / Module / PC Card Outlines and Dimensions 2 Intel Product Identification Codes NG 8 3 8 6 S X 1 Up to15 Alphanumeric Characters For Device Types 6 S X 3 8 7 Up to 6 Alphanumeric Characters to Show Customer-Specific Requirements Package Type A B C

Contextual Info: A500RW Series Wide Input Range, 5W Single & Dual Output DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Input

bddf

Contextual Info: CP3SP33 www.ti.com SNOSCW5 – MAY 2013 Connectivity Processor with Cache, DSP, and Bluetooth , USB, and Dual CAN Interfaces Check for Samples: CP3SP33 1 Introduction 1.1 Features 123 • CPU Features – Fully static RISC processor core, capable of operating from 0 to 96 MHz with zero

Contextual Info: ¿A55452BQB Dual NAND Peripheral Driver FAIRCHILD A S chlum berger C om pany MIL-STD-883 July 1986 — Rev 15 Aerospace and Defense Data Sheet Linear Products Description Connection Diagram 8-Lead DIP Top View The /A55452BQB is a dual high speed general purpose

transistor D880 circuit diagram application

Abstract: GP-07 BR17
Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

diode databook package outline

Abstract: sip Connector, Pitch 2.5mm, 4 pin PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC a5501 A5540 Side Brazed Ceramic Dual-In-Line Packages Side Brazed Ceramic Dual-In-Line Packages 28 EPROM databook 35 x 35 PBGA, 580 100 balls 64 CERAMIC LEADLESS CHIP CARRIER LCC
Contextual Info: Package / Module / PC Card Outlines and Dimensions 2 Intel Product Identification Codes NG 8 3 8 6 S X 1 Up to15 Alphanumeric Characters For Device Types 6 S X 3 8 7 Up to 6 Alphanumeric Characters to Show Customer-Specific Requirements Package Type – –

ior 481 mosfet

Abstract: 188373 IRFR9310 IRFU9310 IRFR P-Channel MOSFET U9310
Contextual Info: International I Q R Rectifier pd9.i663 PRELIMINARY IR F R /U 9 3 1 0 HEXFET Power M O S FE T • • • • • • P-Channel Surface Mount IRFR9310 Straight Lead (IRFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated V DSS = -4 0 0V