A331 TRANSISTOR Search Results

2SA1862

Abstract: 2SA1807 A343
Contextual Info: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307

2SA1807

Abstract: A331 2SA1862 96-109-A343
Contextual Info: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Transistors Packages 45

TRANSISTOR D400

Abstract: D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2sd2166 high hfe transistor NPN transistor 2sd1863 Transistor PNP VCEO 400V
Contextual Info: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Transistors 2SA1812 / 2SA1727 / 2SA1776 (96-609-A313) 320 Transistors 2SA1834 2SC5001 (96-106-B217) (96-193-D217) 292 Transistors 2SA1952 / 2SA1906 / 2SA1757 2SC5103 / 2SC4596 (96-603-A314) (96-199-C314)

2SA1807

Abstract: A343 2SA1862
Contextual Info: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the

TRANSISTOR A331

Contextual Info: Cascadable Amplifier 2 to 2400 MHz A33-1/ SMA33-1 V3 Features Product Image • ULTRAWIDE BANDWIDTH: 1-2600 MHz TYP. • MEDIUM OUTPUT LEVEL: +6 dBm (TYP.) Description The A33-1 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing

TRANSISTOR A331

Abstract: A331 transistor A33-1 CA33-1 SMA33-1 ON A33
Contextual Info: A33-1 / SMA33-1 Cascadable Amplifier 2 to 2400 MHz Rev. V3 Features Product Image • ULTRAWIDE BANDWIDTH: 1-2600 MHz TYP. • MEDIUM OUTPUT LEVEL: +6 dBm (TYP.) Description The A33-1 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing

A331 transistor

Contextual Info: A33-1/SMA33-1 2 TO 2400 MHz CASCADABLE AMPLIFIER • ULTRAWIDE BANDWIDTH: 1-2600 MHz TYP. · MEDIUM OUTPUT LEVEL: +6 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 1/01)* Characteristics Typical Frequency Small Signal Gain (min.) Gain Flatness (max.)

TRANSISTOR A331

Abstract: A33-1 CA33-1 SMA33-1
Contextual Info: A33-1/SMA33-1 2 TO 2400 MHz CASCADABLE AMPLIFIER • ULTRAWIDE BANDWIDTH: 1-2600 MHz TYP. · MEDIUM OUTPUT LEVEL: +6 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 1/01)* Characteristics Typical Frequency Small Signal Gain (min.) Gain Flatness (max.)

capacitor ase 104

Abstract: Z808 w188 trimm resistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 MRF6404K NPN S ilicon RF Pow er Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz.

RF640

Abstract: ez808 transistor b 745 RF6404 capacitor 104 Z5 R/Vitramon
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF6404 MRF6404K The RF Line NPN Silicon RF Pow er Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. 30 W , 1.88 GHz

11Z4

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics

TRANSISTOR A331

Abstract: 395C-01
Contextual Info: MOTOROLA MRF6404 NPN Silicon RF Power Transistor LIFETIME BUY The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics

Contextual Info: u u U A33-1 / SMA33-1 2 to 2400 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ ULTRAWIDE BANDWIDTH: 1 - 2600 MHz TYP. ♦ MEDIUM OUTPUT LEVEL: +6 dBm (TYP.) Outline Drawings Specifications’* Characteristics Frequency (Min.) Small Signal Gain (Min.)

Contextual Info: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor T he M R F 6 4 0 4 is d e sig ned fo r 26 vo lts m icro w a ve large sig na l, com m o n em itter, cla ss AB linea r a m p lifie r a p p lica tio n s op e ra tin g in th e range 1.8 to

TRANSISTOR A331

Abstract: transistor 31C 37281 ADC 50 Ghz MRF6404K A153 A331 DCS1800 MRF6404 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
Contextual Info: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA MRF6404 MRF6404K The RF Line NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to

capacitor 104 Z5

Abstract: resistor A331 TRANSISTOR A331 A153 A331 DCS1800 MRF6404 motorola 572 transistor 150 watts power amplifier layout ATC 100A
Contextual Info: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to

Contextual Info: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics

37281

Abstract: TRANSISTOR A331 transistor 31C resistor A331 A153 A331 DCS1800 MRF6404
Contextual Info: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics

MAAM-008863

Abstract: MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer
Contextual Info: Corporate Headquarters Richardson Electronics 40W267 Keslinger Road P.O. Box 393 LaFox, IL USA 60147-0393 Phone: 1 800 737-6937 630-208-3637 Fax: (630) 208-2550 Internet: www.rell.com Email: Canada Brampton, Ontario Torod, Norway 1 (800) 737-6937 Latin America

smr-3822

Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
Contextual Info: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM

PH1819-60

Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
Contextual Info: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies

heds 5310

Abstract: VC 5022-2 p605 mosfet HEDS 6310 encoder heds 6310 acsl 086 s SMD MOSFET DRIVE 4606 Alps GMR sensor transistor 5503 dm logitech x 530
Contextual Info: Avago Technologies www.avagotech.com AVAGO TECHNOLOGIES EBV Elektronik GmbH & Co. KG www.ebv.com Оптоэлектронные и СВЧ компоненты «Аваго Текнолоджиз» АПРЕЛЬ ОПТОЭЛЕКТРОННЫЕ И СВЧ КОМПОНЕНТЫ «АВАГО ТЕКНОЛОДЖИЗ»

Y00308

Abstract: 8003 qualcomm 1110
Contextual Info: DSP56800E 16-Bit Digital Signal Processor Core Reference Manual DSP56800ERM/D Rev. 2.0, 12/2001 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any

DSP56800E 16-Bit Digital Signal Processor Core Reference Manual

Abstract: hEX INVERTER DSP56800 DSP56800E motorola K 626 QUALCOMM Reference manual block diagram of qualcomm
Contextual Info: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. DSP56800E 16-Bit Digital Signal Processor Core Reference Manual DSP56800ERM/D Rev. 2.0, 12/2001 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc.