A3 ELECTRONIC DEVICE Search Results

cd 5151

Abstract: ADSP-21060L ADSP-21062L EDI8L32512C EDI8L32512V MPC860 TMS320LC31
Contextual Info: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution

IC vertical lg

Abstract: MW3736CKH
Contextual Info: CCD Area Image Sensor MW3736CKH 11mm 2/3 inch 768H CCD Area Image Sensor • Overview ■ Pin Assignments The MW3736CKH is a 11mm (2/3 inch) Interline Transfer CCD (ITCCD) solid state image sensor device. This device uses photodiodes in the optoelectric conversion section

Contextual Info: WMS512K8-XXX White Electronic Designs 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES  Access Times 15, 17, 20, 25, 35, 45, 55ns  MIL-STD-883 Compliant Devices Available  Revolutionary, Center Power/Ground Pinout JEDEC Approved 36 lead Ceramic SOJ Package 100

smd mark 601 8 pin

Abstract: WMS512K8-XXX SRAM flatpack
Contextual Info: White Electronic Designs WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 Access Times 15, 17, 20, 25, 35, 45, 55ns Commercial, Industrial and Military Temperature Range MIL-STD-883 Compliant Devices Available

Contextual Info: White Electronic Designs WS128K32V-XXX PRELIMINARY* 128Kx32 3.3V SRAM MODULE FEATURES Access Times of 15*, 17, 20, 25, 35ns 3.3 Volt Power Supply MIL-STD-883 Compliant Devices Available Low Power CMOS Low Voltage Operation TTL Compatible Inputs and Outputs

Contextual Info: White Electronic Designs WS128K32-XXX 128Kx32 SRAM MODULE, SMD 5962-93187 & 5962-95595 FEATURES Access Times of 15, 17, 20, 25, 35, 45, 55ns Low Power CMOS MIL-STD-883 Compliant Devices Available TTL Compatible Inputs and Outputs Packaging Built in Decoupling Caps and Multiple Ground Pins

ANSI-J-STD-002

Abstract: ASMD050-2 automotive qualification standard PS400 125 PolySwitch AGR1400 marking AHR 17 raychem TD AGR900 polyswitch 200 AGR500
Contextual Info: Automotive PolySwitch Automotive Resettable Devices Raychem has provided PPTC resettable devices in the automotive industry for over twenty years. Until recently, the products sold by Raychem to this industry were either custom products TD and Chip series devices or our standard commercial versions of

w86c551

Abstract: W86C451 KEYBOARD IBM PC XT w86c45
Contextual Info: A ^ C 5 5 1 /W ^ Ç 5 5 1 P UART WITH FIFO AND PRINTER PORT CONTROLLER GENERAL DESCRIPTION The W86C551 is an enhanced version of the existing W86C451. The device supports one 16550 compatible UART and one Centronics parallel interface. FEATURES • Easily interfaces with most popular microprocessors

WMS512K8BV-XXXE

Contextual Info: WMS512K8BV-XXXE HI-RELIABILITY PRODUCT 512Kx8 MONOLITHIC SRAM PRELIMINARY* FEATURES • Low Voltage Operation: ■ Access Times 15, 17, 20ns ■ MIL-STD-883 Compliant Devices Available ■ Revolutionary, Center Power/Ground Pinout JEDEC Approved • 36 lead Ceramic SOJ Package 100

WS256K32-XXX

Abstract: 44256K
Contextual Info: WS256K32-XXX HI-RELIABILITY PRODUCT 256Kx32 SRAM MODULE PRELIMINARY* FEATURES • 2V Data Retention devices available WS256K32L-XXX low power version only ■ Access Times 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging ■ Commercial, Industrial and Military Temperature Range

AM29F080

Abstract: EDI7F4331MC
Contextual Info: White Electronic Designs EDI7F4331MC 4x1Mx32 FLASH MODULE FEATURES n 4x1Mx32 n Based on AMD - AM29F080 Flash Device n Fast Read Access Time - 80ns n 5V Only Reprogramming n Sector Erase Architecture n n n n The module offers access times between 80 and 150ns

28F008S3

Abstract: EDI7F341MV
Contextual Info: EDI7F341MV White Electronic Designs 1Mx32 FLASH MODULE FIG. 1 DESCRIPTION BLOCK DIAGRAMS The EDI7F341MV and EDI7F2341MV are organized as one and two banks of 1Mx32 respectively. The modules are based on Intel's 28F008S3 - 1Mx8 Flash device in TSOP packages

Flash SIMM 80

Abstract: 4mx32 4mx32 80-pin AM29LV033C 4Mx8 WED7F324XE3SN
Contextual Info: WED7F324XE3SN White Electronic Designs 4Mx32 FLASH MODULE DESCRIPTION FIG. 1 The WED7F324XE3SN is organized as a 4Mx32 flash module. The module is based on AMDs AM29LV033C 4Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate. BLOCK DIAGRAM

Flash SIMM 80

Abstract: 4mx32 80 pin simm flash 8mx32 80-pin 4Mx8 8mx32 simm 72 pin 4mx32 80-pin DQ24-31 intel flash simm A0-A21
Contextual Info: WED7F324XDNSN White Electronic Designs 4Mx32 / 2x4Mx32; INTEL J3 BASED, FLASH MODULE FEATURES FIG. 1 BLOCK DIAGRAMS  4Mx32 and 2x4mx32 Densities  Based on Intel's Strataflash J3 family of Flash Devices WED7F324DNSN: 4Mx32 80 PIN SIMM A0-A21 E0# G#

SMD transistor n36

Abstract: smd transistor A13 transistor smd f36 EDI88128CS EDI88512CA EDI88512LPA
Contextual Info: EDI88512CA HI-RELIABILITY PRODUCT 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. • Access Times of 15, 17, 20, 25, 35, 45, 55ns The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. All 32 pin packages are pin for pin

9374

Abstract: EDI7F4342MV 28F016B3
Contextual Info: EDI7F4342MV 4x2Megx32 Features 4x2Megx32 Flash Module • 4 x 2 Meg x 32 • Based on Intel's 28F016B3 Flash Device • Fast Read Access Time - 120ns • Flexible Smart Voltage • 2.7-3.6V Program Erase • 2.7-3.6V Read Operation • 12Vpp Fast Production Programming

LH28F800SU

Contextual Info: EDI7F434IMC 4x1Megx32 Features 4x1Megx32 Flash Module • 4 x 1 Meg x 32 • Based on Sharp's LH28F800SU Flash Device • Fast Read Access Time - 80ns • 5- Volt-Only Reprogramming • Low Power Dissipation • 60mA per Device Active Current • 10µA per Device CMOS Standby Current

28F008B3

Contextual Info: EDI7F434IMV 4x1Megx32 Features 4x1Megx32 Flash Module • 4 x 1 Meg x 32 • Based on Intel's 28F008B3 Flash Device • Fast Read Access Time - 120ns • Flexible Smart Voltage • 2.7-3.6V Program Erase • 2.7-3.6V Read Operation • 12Vpp Fast Production Programming

AM29F080

Abstract: EDI7F33IMC
Contextual Info: EDI7F433IMC 4x1Megx32 4x1Megx32 Flash Module The EDI7F33IMC is organized as four banks of 1 meg x 32. The module is based on AMDs AM29F080 - 1Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate. The module offers access times between 90 and 150ns

80 pin simm flash

Abstract: AM29LV017B EDI7F332MV
Contextual Info: White Electronic Designs EDI7F332MV 2Mx32 FLASH MODULE FEATURES 2Mx32 and 2x2Mx32 Densities Data Polling and Toggle Bit feature for detection of program or erase cycle completion Based on AMD - AM29LV017B Flash Device Low Power Dissipation Fast Read Access Time - 90ns

AM29LV008T

Abstract: SIMM 80 jedec
Contextual Info: EDI7F433IMV 4x1Megx32 PRELIMINARY 4X1Megx32 Flash Module The EDI7F433IMV is organized as four banks of 1 meg x 32. The module is based on AMDs AM29LV008T - 1Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate. The module offers access times between 100 and

E28F00855-1Megx8

Abstract: A1712 AN 5151 28F008S5 EDI7F88MB100S EDI7F88MB120S EDI7F88MB90S
Contextual Info: EDI7F88MB 8Meg x 8 Flash Module FIG. 1 BLOCK DIAGRAM EDI7F88MB 8Mx8 DESCRIPTION The EDI7F88MB is organized as a 8Mx8 Flash module. The module is based on Intel's E28F00855-1Megx8 Flash device in a TSOP package which is mounted on an FR4 substrate. A0-A9 W

Contextual Info: EDI7F88MB 8Megx8 8Megx8 Flash Module The EDI7F88MB is organized as a 8Mx8 Flash module. The module is based on Intel's E28F008551Megx8 Flash device in a TSOP package which is mounted on an FR4 substrate. Block Diagrams EDI7F88MB 8Megx8 The module offers access times between 90 and

AOZ8043

Abstract: AOZ8043DI alpha date code System
Contextual Info: AOZ8043 4-Line EMI Filter with Integrated ESD Protection General Description Features The AOZ8043 is an 4-line device integrating EMI filtering with ESD protection for each line. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic discharge ESD protection in portable electronic