A3 ELECTRONIC DEVICE Search Results

Contextual Info: www.fairchildsemi.com K A3 3 V Volt a ge St a bilize r Features Description • Low Temperature Coefficient • Low Dynamic Resistance • Typical Reference Voltage of 33V The KA33V is a monolithic integrated voltage stabilizer especially designed as voltage supplier for electronic tuners.

Contextual Info: www.fairchildsemi.com K A3 7 8 R0 5 Low Dropout Volt a ge Re gulat or Features Description • • • • • The KA378R05 is a low-dropout voltage regulator suitable for various electronic equipments. It provides constant voltage power source with TO-220 4 lead full mold package.

Contextual Info: www.fairchildsemi.com K A3 7 8 R3 3 Low Dropout V olt a ge Re gula t or Features Description • • • • • The KA378R33 is a low-dropout voltage regulator suitable for various electronic equipments. It provide constant voltage power source with TO-220 4 lead full mold package.

Contextual Info: www.fairchildsemi.com K A3 7 8 R1 2 C Low Dropout Volt a ge Re gula t or Features Description • • • • • The KA378R12C is a low-dropout voltage regulator suitable for various electronic equipments. It provide constant voltage power source with TO-220 4 lead full mold package.

EDH411MN-10

Abstract: EDH411MN-12 EDH411MN-15
Contextual Info: Electronic Designs ln< - ' . EDH411MN-10/12/15 . < ^ ^ \ s v • -» •» V \ ' »v • PINOUTS VC C RASO DOUT A3 A6 □ IN WE RÂS1 AO A7 A8 C AS RAS2 c C C c c c C 8 c 9 c 17 C 18 C vc c vss • C om m on D IN /D O U T lines w ith separate RAS co ntro l

CRZ 2005

Abstract: 16KX8 vqc 10 d VH192 CTZ FCC 16
Contextual Info: 9H Electronic Designs li ED H88H16C-55/70/1C MILITARY 16K x 8 SRAM CMOS < # FEATURES PINOUTS 1 □ 2 □ 27 □ 26 □ 2S AS 3 24 A9 □ 23 A3 c c 3 c 4 c 5 c 6 c 7 c 28 3 23 NC A2 ê c 3 21 AIO A1 9 c 3 20 CEO AO 10 c 3 19 007 DOO 11 c P 1« DQ6 001 12 c

block diagram of of TMS320C4X

Abstract: EDI8L32512C20AI DSP96002 EDI8L32256C EDI8L32512C TMS320C32 EDI8L32512C15AI
Contextual Info: White Electronic Designs EDI8L32512C 512Kx32 CMOS High Speed Static RAM FEATURES DESCRIPTION DSP Memory Solution The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory

MO-47AE

Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MPC860 TMS320LC31
Contextual Info: EDI8L32512V White Electronic Designs 512Kx32 SRAM Module.3.3V FEATURES    ADSP-21060L SHARC  ADSP-21062L (SHARC)  Texas Instruments TMS320LC31   The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and

EDI8L32512V-AC

Abstract: EDI8L32128V EDI8L32512V MO-47AE MPC860 TMS320LC31 ADSP-21060L ADSP-21062L
Contextual Info: White Electronic Designs EDI8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC

ADSP-21060L

Abstract: ADSP-21062L EDI8F32512V EDI8L32128V MO-47AE MPC860 TMS320LC31 ADSP2106XL
Contextual Info: EDI8F32512V White Electronic 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The EDI8F32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC

cd 5151

Abstract: ADSP-21060L ADSP-21062L EDI8L32512C EDI8L32512V MPC860 TMS320LC31
Contextual Info: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution

ABWD

Abstract: AADV WED2ZLRSP01S WED2ZLRSP01S35BC WED2ZLRSP01S38BC WED2ZLRSP01S42BC ABWc
Contextual Info: White Electronic Designs WED2ZLRSP01S 512K x 32/256K x 32 Dual Array Synchronous Pipeline Burst NBL SRAM FEATURES DESCRIPTION The WED2ZLRSP01S, Dual Independent Array, NBLSSRAM device employs high-speed, Low-Power CMOS silicon and is fabricated using an advanced CMOS process.

S29CL016J

Abstract: S29CL032 S29CD016J am29lv JC42 S29CD-J S29CL-J CD016J cl016 CL-016
Contextual Info: S29CD016J/S29CL016J Known Good Die 16 Megabit 512k x 32-Bit CMOS 2.6 or 3.3 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory with VersatileI/O Supplement (Preliminary) General Description The Spansion S29CD016J and S29CL016J devices are Floating Gate products fabricated in 110 nm process technology.

IC vertical lg

Abstract: MW3736CKH
Contextual Info: CCD Area Image Sensor MW3736CKH 11mm 2/3 inch 768H CCD Area Image Sensor • Overview ■ Pin Assignments The MW3736CKH is a 11mm (2/3 inch) Interline Transfer CCD (ITCCD) solid state image sensor device. This device uses photodiodes in the optoelectric conversion section

smd mark 601 8 pin

Abstract: WMS512K8-XXX SRAM flatpack
Contextual Info: White Electronic Designs WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 Access Times 15, 17, 20, 25, 35, 45, 55ns Commercial, Industrial and Military Temperature Range MIL-STD-883 Compliant Devices Available

A016 SMD

Abstract: a016 O28 Package
Contextual Info: White Electronic Designs WS128K32-XXX 128Kx32 SRAM MODULE, SMD 5962-93187 FEATURES Access Times of 70, 85, 100, 120ns 5 Volt Power Supply MIL-STD-883 Compliant Devices Available Low Power CMOS Packaging TTL Compatible Inputs and Outputs • 66-pin, PGA Type, 1.075 inch square, Hermetic

A016

Abstract: A016 SMD CQFP 80
Contextual Info: White Electronic Designs WS128K32-XXX 128Kx32 SRAM MODULE, SMD 5962-93187 FEATURES „ Access Times of 70, 85, 100, 120ns „ 5V Power Supply „ MIL-STD-883 Compliant Devices Available „ Low Power CMOS „ Packaging „ TTL Compatible Inputs and Outputs • 66-pin, PGA Type, 1.075 inch square, Hermetic

EDI2DL32256V

Abstract: TMS320C6201
Contextual Info: EDI2DL32256V 256Kx32 Synchronous Pipline Burst SRAM 3.3V FEATURES DESCRIPTION • tKHQV times of 3.5, 3.8 and 4.0ns The EDI2DL32256VxxBC is a 3.3V, 256Kx32 Synchronous Pipeline Burst SRAM constructed with two 256Kx16 die mounted on a multi-layer laminate substrate. The device is packaged in a 119

Contextual Info: CCD Area Image Sensor MW39580AE Diagonal 11 mm type-2/3 IT CCD Area Image Sensor • Pin Assignments ■ Overview The MW39580AE is a type-2/3 2.2M-pixel CCD solid state image sensor. This device uses photodiodes in the opto-electric conversion section and CCDs for signal read-out. The electronic shutter function allows for an exposure time of 1/10 000

Contextual Info: Panasonic CCD Area Image Sensor MW3795H, MW3795S 11 mm 2/3 inch CCD Area Image Sensors for HDTV •Overview iPin Assignments The M W 3795H and M W 3795S are 11mm (2/3 inch) Frame Interline Transfer C C D (FIT-C C D ) solid state image sensor NC 1 32 This device uses photodiodes in the optoelectric conversion

Contextual Info: CCD Area Image Sensor MW3759MAE 11mm type-2/3 Wide CCD Area Image Sensor • Overview The MW3759MAE is a 11mm (type-2/3) Multiple Frame interline transfer CCD (M-FIT-CCD) solid state image sensor device. This device uses photodiodes in the optoelectric conversion section and CCDs for signal read out.

WMS512K8-XXX

Contextual Info: WMS512K8-XXX HI-RELIABILITY PRODUCT 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES • 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 ■ Access Times 15, 17, 20, 25, 35, 45, 55ns ■ MIL-STD-883 Compliant Devices Available ■ Revolutionary, Center Power/Ground Pinout

smd mark 601 8 pin

Abstract: CERAMIC LEADLESS CHIP CARRIER CLCC 28 512k x 8 SRAM
Contextual Info: WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES n Access Times 15, 17, 20, 25, 35, 45, 55ns n 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 n MIL-STD-883 Compliant Devices Available n Commercial, Industrial and Military Temperature Range

Contextual Info: White Electronic Designs WS128K32V-XXX PRELIMINARY* 128Kx32 3.3V SRAM MODULE FEATURES Access Times of 15*, 17, 20, 25, 35ns 3.3 Volt Power Supply MIL-STD-883 Compliant Devices Available Low Power CMOS Low Voltage Operation TTL Compatible Inputs and Outputs