A3 ELECTRONIC DEVICE Search Results
A3 ELECTRONIC DEVICE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TPD2015FN | Toshiba Electronic Devices & Storage Corporation | Intelligent power device (High side switch) / VDD=40 V / 8ch / SSOP30 | Datasheet | ||
| TPD2017FN | Toshiba Electronic Devices & Storage Corporation | Intelligent power device (Low side switch) / VDD=6 V / 8ch / SSOP30 | Datasheet | ||
| TPD4165K | Toshiba Electronic Devices & Storage Corporation | Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=3 A / HDIP30 | Datasheet | ||
| TPD4206F | Toshiba Electronic Devices & Storage Corporation | Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=500 V / Iout=2.5 A / SSOP30 | Datasheet | ||
| TPD4204F | Toshiba Electronic Devices & Storage Corporation | Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2.5 A / SSOP30 | Datasheet |
A3 ELECTRONIC DEVICE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
WMS512K8V-XCXContextual Info: White Electronic Designs 512Kx8 MONOLITHIC SRAM ADVANCED* FEATURES EVOLUTIONARY PINOUT • Access Times 70, 85, 100, 120ns 32 DIP 32 CSOJ DE ■ MIL-STD-883 Compliant Devices Available ■ Low Voltage Operation TOP VIEW A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 |
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512kx8120nsmil-std-883wms512k8v-xcx | |
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Contextual Info: www.fairchildsemi.com K A3 3 V Volt a ge St a bilize r Features Description • Low Temperature Coefficient • Low Dynamic Resistance • Typical Reference Voltage of 33V The KA33V is a monolithic integrated voltage stabilizer especially designed as voltage supplier for electronic tuners. |
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ka33v | |
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Contextual Info: White Electronic Designs WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 EVOLUTIONARY PINOUT A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND FEATURES 32 DIP 32 CSOJ DE • Access Times 70, 85, 100, 120ns ■ MIL-STD-883 Compliant Devices Available |
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wms512k8-xxx512kx8120nsmil-std-883+3 | |
c 4072
Abstract: WMS512K8-XXX
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wms512k8-xxx512kx8120nsmil-std-883+6 | |
three phase bridge inverter
Abstract: three phase pulse generator 3 phase waveform generator three phase bridge inverter in 120 degree ultrasonic generator 1 Mhz Marconi bridge rectifier p circuit diagram of pulse width modulation INTEL I7 microprocessor circuit diagram marconi signal generator marconi electronic devices ltd
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ma818three phase bridge inverterthree phase pulse generator3 phase waveform generator+7 | |
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Contextual Info: www.fairchildsemi.com K A3 7 8 R0 5 Low Dropout Volt a ge Re gulat or Features Description • • • • • The KA378R05 is a low-dropout voltage regulator suitable for various electronic equipments. It provides constant voltage power source with TO-220 4 lead full mold package. |
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ka378r05o-220o-220f-4l | |
23425Contextual Info: White Electronic Designs 2x512Kx8 DUALITHIC SRAM PRELIMINARY* FEATURES PIN CONFIGURATION FOR WS1M8-XCX • Access Times 70, 85, 100ns 32 DIP ■ Evolutionary, Corner Power/Ground Pinout TOP VIEW A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND |
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2x512kx8100ns512kx823425 | |
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Contextual Info: www.fairchildsemi.com K A3 7 8 R3 3 Low Dropout V olt a ge Re gula t or Features Description • • • • • The KA378R33 is a low-dropout voltage regulator suitable for various electronic equipments. It provide constant voltage power source with TO-220 4 lead full mold package. |
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ka378r33o-220o-220f-4l | |
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Contextual Info: www.fairchildsemi.com K A3 7 8 R1 2 C Low Dropout Volt a ge Re gula t or Features Description • • • • • The KA378R12C is a low-dropout voltage regulator suitable for various electronic equipments. It provide constant voltage power source with TO-220 4 lead full mold package. |
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ka378r12co-220a/12vo-220f-4l | |
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Contextual Info: White Electronic Designs WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 • Read Access Times of 120, 140, 150, 200, 250, 300ns PIN CONFIGURATION 32 DIP 32 CSOJ TOP VIEW NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS |
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wme128k8-xxx128kx8300nsmil-std-883+5 | |
WME128K8-XXXContextual Info: White Electronic Designs WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 • Read Access Times of 120, 140, 150, 200, 250, 300ns PIN CONFIGURATION 32 DIP 32 CSOJ TOP VIEW NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS |
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wme128k8-xxx128kx8300nsmil-std-883+5 | |
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Contextual Info: White Electronic Designs 2x512Kx8 DUALITHIC SRAM ADVANCED* PIN CONFIGURATION FOR WS1M8V-XCX FEATURES • Access Times 17, 20, 25, 35, 45, 55ns 32 DIP TOP VIEW A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
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2x512kx8512kx8 | |
LTL-201
Abstract: LTL-231 diode e4e LTL-211 LTL-221 LTL-251 LTL-291
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ltl-201ltl-211ltl-221ltl-231+3 | |
EDH411MN-10
Abstract: EDH411MN-12 EDH411MN-15
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edh411mn-10/12/15edh411mnedh411mn-10edh411mn-12+1 | |
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block diagram of of TMS320C4X
Abstract: EDI8L32512C20AI DSP96002 EDI8L32256C EDI8L32512C TMS320C32 EDI8L32512C15AI
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edi8l32512c512kx32dsp96002tms320c3x+8 | |
TMS320C4X
Abstract: DSP96002 EDI8L32256C EDI8L32512C TMS320C32 ADQ28 MO-47
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edi8l32512c512kx32dsp96002tms320c3x+6 | |
MO-47AE
Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MPC860 TMS320LC31
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edi8l32512v512kx32adsp-21062ltms320lc31+4 | |
EDI8L32512V-AC
Abstract: EDI8L32128V EDI8L32512V MO-47AE MPC860 TMS320LC31 ADSP-21060L ADSP-21062L
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edi8l32512v512kx32adsp-21060ladsp-21062l+6 | |
ADSP-21060L
Abstract: ADSP-21062L EDI8F32512V EDI8L32128V MO-47AE MPC860 TMS320LC31 ADSP2106XL
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edi8f32512v512kx32adsp-21060ladsp-21062l+6 | |
5962-96691
Abstract: CERAMIC LEADLESS CHIP CARRIER wms128k8 WMS128K8-XXX smd mark 601 8 pin
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wms128k8-xxx128kx8mil-std-88305hxx+10 | |
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Contextual Info: White Electronic Designs WMS128K8-XXX 128Kx8 MONOLITHIC SRAM, SMD 5962-96691 FEATURES 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 Access Times 15, 17, 20, 25, 35, 45, 55ns MIL-STD-883 Compliant Devices Available Revolutionary, Center Power/Ground Pinout JEDEC |
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128kx8wms128k8-xxxmil-std-883t2-96691+6 | |
EDI8L32512VContextual Info: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V T NO FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. |
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edi8l32512v512kx32adsp-21060ladsp-21062l+3 | |
EDI8L32512V-AC
Abstract: 8L32512V
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edi8l32512v512kx32adsp-21060ladsp-21062l+5 | |
cd 5151
Abstract: ADSP-21060L ADSP-21062L EDI8L32512C EDI8L32512V MPC860 TMS320LC31
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edi8l32512v512kx32adsp-21060ladsp-21062l+4 | |