A3 ELECTRONIC DEVICE Search Results
A3 ELECTRONIC DEVICE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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DLW21SH670HQ2L | Murata Manufacturing Co Ltd | CMC SMD 67ohm 320mA POWRTRN | |||
DLW21SH900HQ2L | Murata Manufacturing Co Ltd | CMC SMD 90ohm 280mA POWRTRN | |||
DLW21SH121HQ2L | Murata Manufacturing Co Ltd | CMC SMD 120ohm 280mA POWRTRN | |||
BLM15PX330BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 33ohm POWRTRN | |||
BLM15PX600SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 60ohm POWRTRN |
A3 ELECTRONIC DEVICE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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WMS512K8V-XCXContextual Info: White Electronic Designs 512Kx8 MONOLITHIC SRAM ADVANCED* FEATURES EVOLUTIONARY PINOUT • Access Times 70, 85, 100, 120ns 32 DIP 32 CSOJ DE ■ MIL-STD-883 Compliant Devices Available ■ Low Voltage Operation TOP VIEW A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 |
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512Kx8 120ns MIL-STD-883 WMS512K8V-XCX WMS512K8V-XCX | |
Contextual Info: www.fairchildsemi.com K A3 3 V Volt a ge St a bilize r Features Description • Low Temperature Coefficient • Low Dynamic Resistance • Typical Reference Voltage of 33V The KA33V is a monolithic integrated voltage stabilizer especially designed as voltage supplier for electronic tuners. |
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KA33V KA33V | |
Contextual Info: White Electronic Designs WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 EVOLUTIONARY PINOUT A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND FEATURES 32 DIP 32 CSOJ DE • Access Times 70, 85, 100, 120ns ■ MIL-STD-883 Compliant Devices Available |
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WMS512K8-XXX 512Kx8 120ns MIL-STD-883 A0-18 120ns 100ns 01HYX | |
c 4072
Abstract: WMS512K8-XXX
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WMS512K8-XXX 512Kx8 120ns MIL-STD-883 01HYX 100ns 02HYX 03HYX 04HYX c 4072 WMS512K8-XXX | |
three phase bridge inverter
Abstract: three phase pulse generator 3 phase waveform generator three phase bridge inverter in 120 degree ultrasonic generator 1 Mhz Marconi bridge rectifier p circuit diagram of pulse width modulation INTEL I7 microprocessor circuit diagram marconi signal generator marconi electronic devices ltd
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OCR Scan |
MA818 three phase bridge inverter three phase pulse generator 3 phase waveform generator three phase bridge inverter in 120 degree ultrasonic generator 1 Mhz Marconi bridge rectifier p circuit diagram of pulse width modulation INTEL I7 microprocessor circuit diagram marconi signal generator marconi electronic devices ltd | |
Contextual Info: www.fairchildsemi.com K A3 7 8 R0 5 Low Dropout Volt a ge Re gulat or Features Description • • • • • The KA378R05 is a low-dropout voltage regulator suitable for various electronic equipments. It provides constant voltage power source with TO-220 4 lead full mold package. |
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KA378R05 O-220 O-220F-4L | |
23425Contextual Info: White Electronic Designs 2x512Kx8 DUALITHIC SRAM PRELIMINARY* FEATURES PIN CONFIGURATION FOR WS1M8-XCX • Access Times 70, 85, 100ns 32 DIP ■ Evolutionary, Corner Power/Ground Pinout TOP VIEW A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND |
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2x512Kx8 100ns 512Kx8 23425 | |
Contextual Info: www.fairchildsemi.com K A3 7 8 R3 3 Low Dropout V olt a ge Re gula t or Features Description • • • • • The KA378R33 is a low-dropout voltage regulator suitable for various electronic equipments. It provide constant voltage power source with TO-220 4 lead full mold package. |
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KA378R33 O-220 O-220F-4L | |
Contextual Info: www.fairchildsemi.com K A3 7 8 R1 2 C Low Dropout Volt a ge Re gula t or Features Description • • • • • The KA378R12C is a low-dropout voltage regulator suitable for various electronic equipments. It provide constant voltage power source with TO-220 4 lead full mold package. |
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KA378R12C O-220 A/12V O-220F-4L | |
Contextual Info: White Electronic Designs WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 • Read Access Times of 120, 140, 150, 200, 250, 300ns PIN CONFIGURATION 32 DIP 32 CSOJ TOP VIEW NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS |
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WME128K8-XXX 128Kx8 300ns MIL-STD-883 of128K 300ns 250ns 200ns 150ns 140ns | |
WME128K8-XXXContextual Info: White Electronic Designs WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 • Read Access Times of 120, 140, 150, 200, 250, 300ns PIN CONFIGURATION 32 DIP 32 CSOJ TOP VIEW NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS |
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WME128K8-XXX 128Kx8 300ns MIL-STD-883 04HYX 140ns 05HYX 120ns 06HYX WME128K8-XXX | |
Contextual Info: White Electronic Designs 2x512Kx8 DUALITHIC SRAM ADVANCED* PIN CONFIGURATION FOR WS1M8V-XCX FEATURES • Access Times 17, 20, 25, 35, 45, 55ns 32 DIP TOP VIEW A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
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2x512Kx8 512Kx8 | |
LTL-201
Abstract: LTL-231 diode e4e LTL-211 LTL-221 LTL-251 LTL-291
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OCR Scan |
LTL-201 LTL-211 LTL-221 LTL-231 LTL-251 LTL-291 diode e4e | |
EDH411MN-10
Abstract: EDH411MN-12 EDH411MN-15
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OCR Scan |
EDH411MN-10/12/15 EDH411MN EDH411MN-10 EDH411MN-12 EDH411MN-15 | |
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block diagram of of TMS320C4X
Abstract: EDI8L32512C20AI DSP96002 EDI8L32256C EDI8L32512C TMS320C32 EDI8L32512C15AI
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EDI8L32512C 512Kx32 EDI8L32512C DSP96002 TMS320C3x, TMS320C4x TMS320C30/C31 TMS320C32 DSP9Q09 block diagram of of TMS320C4X EDI8L32512C20AI DSP96002 EDI8L32256C TMS320C32 EDI8L32512C15AI | |
TMS320C4X
Abstract: DSP96002 EDI8L32256C EDI8L32512C TMS320C32 ADQ28 MO-47
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EDI8L32512C 512Kx32 EDI8L32512C DSP96002 TMS320C3x, TMS320C4x TMS320C30/C31 TMS320C32 TMS320C4X DSP96002 EDI8L32256C TMS320C32 ADQ28 MO-47 | |
MO-47AE
Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MPC860 TMS320LC31
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EDI8L32512V 512Kx32 ADSP-21062L TMS320LC31 EDI8L32512V ADSP-21060L MPC860 MO-47AE ADSP-21060L ADSP-21062L EDI8L32128V MPC860 TMS320LC31 | |
EDI8L32512V-AC
Abstract: EDI8L32128V EDI8L32512V MO-47AE MPC860 TMS320LC31 ADSP-21060L ADSP-21062L
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EDI8L32512V 512Kx32 EDI8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 512Kx8, EDI8L32512V-AC EDI8L32128V MO-47AE MPC860 TMS320LC31 ADSP-21060L ADSP-21062L | |
ADSP-21060L
Abstract: ADSP-21062L EDI8F32512V EDI8L32128V MO-47AE MPC860 TMS320LC31 ADSP2106XL
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EDI8F32512V 512Kx32 EDI8F32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 512Kx8, ADSP-21060L ADSP-21062L EDI8L32128V MO-47AE MPC860 TMS320LC31 ADSP2106XL | |
5962-96691
Abstract: CERAMIC LEADLESS CHIP CARRIER wms128k8 WMS128K8-XXX smd mark 601 8 pin
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WMS128K8-XXX 128Kx8 MIL-STD-883 05HXX 06HXX 07HXX 08HXX 09HXX 10HXX 11HXX 5962-96691 CERAMIC LEADLESS CHIP CARRIER wms128k8 WMS128K8-XXX smd mark 601 8 pin | |
Contextual Info: White Electronic Designs WMS128K8-XXX 128Kx8 MONOLITHIC SRAM, SMD 5962-96691 FEATURES 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 Access Times 15, 17, 20, 25, 35, 45, 55ns MIL-STD-883 Compliant Devices Available Revolutionary, Center Power/Ground Pinout JEDEC |
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128Kx8 WMS128K8-XXX MIL-STD-883 t2-96691 08HYX 09HYX 10HYX 11HYX 05HXX 06HXX | |
EDI8L32512VContextual Info: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V T NO FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. |
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EDI8L32512V 512Kx32 EDI8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 EDI8L32512C | |
EDI8L32512V-AC
Abstract: 8L32512V
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EDI8L32512V 512Kx32 ADSP-21060L ADSP-21062L TMS320LC31 MPC860 M0-47AE EDI8L32512V EDI8L32512V-AC 8L32512V | |
cd 5151
Abstract: ADSP-21060L ADSP-21062L EDI8L32512C EDI8L32512V MPC860 TMS320LC31
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EDI8L32512V 512Kx32 EDI8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 EDI8L32512C cd 5151 ADSP-21060L ADSP-21062L MPC860 TMS320LC31 |