A17T Search Results

Contextual Info: HI TA C H I / L O G I C / A R R A Y S / M E H SIE D • MMTbEOa GGlTbflT 7Db ■ H I T S HN62414 Series HN62434 Series T-46-13-15 4M 256K x 16-bit and (512K x 8-bit) Mask ROM ■ DESCRIPTION The Hitachi HN62414/HN62434 Series is a 16-Megabit CMOS Mask Programmable Read Only Memory organized as 262,144 x

TC58DAM72A1FT00

Abstract: TC58DVM72A1FT00 TC58DAM72F1FT00 TC58DVM72F1FT00 TC58DAM72A1X
Contextual Info: TC58DVM72A1FT00/ TC58DVM72F1FT00 TC58DAM72A1FT00/ TC58DAM72F1FT00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 16M u 8 BITS/8M x 16BITS CMOS NAND E2PROM DESCRIPTION The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable

TC58DVM72A1TG00

Contextual Info: TC58DVM72A1TG00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 16M x 8 BITS CMOS NAND E2PROM DESCRIPTION Lead-Free The device is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks. The device uses single power supply (2.7 V to 3.6

TC58DVM82A1XBJ1

Contextual Info: TC58DVM82A1XBJ1 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT 32M u 8 BITS CMOS NAND E2PROM DESCRIPTION The device is a 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 2048 blocks. The device uses single power supply (2.7 V to 3.6

TSOP 48 Package nand memory toshiba

Abstract: TC58DVM72A1FT00 TC58DV TC58DVM72A1F
Contextual Info: TC58DVM72A1FT00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 16M x 8 BITS CMOS NAND E2PROM DESCRIPTION The device is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks. The device uses single power supply (2.7 V to 3.6

TC58DVM82A1FT00

Abstract: TC58DAM82A1FT00 TC58DAM82F1FT00 TC58DVM82F1FT00
Contextual Info: TC58DVM82A1FT00/ TC58DVM82F1FT00 TC58DAM82A1FT00/ TC58DAM82F1FT00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT 32M u 8 BITS/16M x 16BITS CMOS NAND E2PROM DESCRIPTION The TC58DxM82x1xxxx is a 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable

TC58NS128ADC

Abstract: SmartMediaTM Physical Format Specifications SmartMedia Logical Format ID maker code
Contextual Info: TC58NS128ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 128-MBIT 16M ´ 8 BITS CMOS NAND E PROM (16M BYTE SmartMedia ) DESCRIPTION The TC58NS128A is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable

TC58NS256ADC

Contextual Info: TC58NS256ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 256-MBIT 32M ´ 8 BITS CMOS NAND E PROM (32M BYTE SmartMedia ) DESCRIPTION The TC58NS256A is a single 3.3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable

TS048-48-Pin

Abstract: S29AS008J spansion obsolescence
Contextual Info: Am29SL400C Data Sheet Retired Product Am29BDS323D Cover Sheet This product has been retired and is not recommended for designs. For new and current designs, S29AS008J supercedes Am29SL400C. This is the factory-recommended migration path. Please refer to the S29AS008J data sheet for specifications

TC58NS256BDC

Abstract: ssfdc
Contextual Info: TC58NS256BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 256-MBIT 32M u 8 BITS CMOS NAND E PROM (32M BYTE SmartMedia ) DESCRIPTION The TC58NS256B is a single 3.3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable

SmartMediaTM Physical Format Specifications

Abstract: ssfdc ETC 527 TC58NS128BDC TC58NS256BDC
Contextual Info: TC58NS128BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 128-MBIT 16M u 8 BITS CMOS NAND E PROM (16M BYTE SmartMedia ) DESCRIPTION The TC58NS128B is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable

TC58256AFT

Contextual Info: TC58256AFT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 256-MBIT 32M x 8 BITS CMOS NAND E PROM DESCRIPTION The TC58256A is a single 3.3 V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 2048 blocks. The device has a 528-byte

TC58V64BFT

Contextual Info: TC58V64BFT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 64-MBIT 8M ´ 8 BITS CMOS NAND E PROM DESCRIPTION The TC58V64B is a single 3.3 V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes ´ 16 pages ´ 1024 blocks. The device has a 528-byte

TC58FVT400FT

Abstract: VT400F B400F
Contextual Info: TO SHIBA TC58FVT400/B400F/FT-85#-10#-12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4M 512 K X 8 / 256 K X 16 BIT CMOS FLASH MEMORY DESCRIPTION The TC58FVT400/B400 is a 4,194,304 - bits, 3.0 Volt - only Electrically E rasab le and Program m able

DIN527

Contextual Info: TC58512FT TENTATIVE TOSHIBA MOSDIGITAL INTEGRATEDCIRCUIT SILICONGATE CMOS 512-MBIT 64M x 8BITS CMOS NAND E2PROM DESCRIPTION The TC58512 is a single .3V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 32 pages X 4096 blocks.

um61256

Abstract: UM61256Fs um61256fs 15 Hitachi DSA0088 166Q TI07 UM61256F Nippon capacitors
Contextual Info: Preliminary HB66D6464BB Series 64K x 64 bits Synchronous Fast Static RAM Module with TAG, Burst Counter and Pipelined Data Output Rev. 0.0 Feb. 02, 1996 Description The HB66D6464BB has been developed as an optimized cache memory solution for 8 Bytes processor application.

um61256fs 15

Abstract: um61256 um61256fs TI07 Hitachi DSA0088 um61256f tag 136 HB66C6464BB Nippon capacitors
Contextual Info: Preliminary HB66C6464BB Series 64K x 64 bits Synchronous Fast Static RAM Module with TAG, Burst Counter and Pipelined Data Output Rev. 0.0 Feb. 02, 1996 Description The HB66C6464BB has been developed as an optimized cache memory solution for 8 Bytes processor application.

um61256

Abstract: um61256fs 15 TI07 um61256fs Hitachi DSA0088 Nippon capacitors HM62C3232
Contextual Info: Preliminary HB66C6464BA Series 64K x 64 bits Synchronous Fast Static RAM Module with TAG, Burst Counter and Pipelined Data Output Rev. 0.0 Dec. 29, 1995 Description The HB66C6464BA has been developed as an optimized cache memory solution for 8 Bytes processor application.

Contextual Info: HN62414 Series-HN62434 Series 4M 256K x 16-bit and (512K x 8-bit) Mask ROM • DESCRIPTION The Hitachi HN62414/HN62434 Series is a 16-Megabit CMOS Mask Programmable Read Only Memory organized as 262,144 x 16-bit and 524,288 x 8-bit. The low power consumption of this device makes it ideal for

Contextual Info: TO SH IBA TC58FVT400/B400F/FT-85,-10,-12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4-MBIT 512K X 8 BITS / 256K X 16 BITS CMOS FLASH M EM ORY DESCRIPTION The TC58FVT400/B400 is a 4,194,304 - bit, 3.0-V read-only electrically erasable and programmable

mxab

Abstract: IX-29
Contextual Info: _ _ _ _ _ _ _ _ _M X 2 FEATURES • • • • • • • • • 9 F8 1 OO 8 M - B r r t 'IM x 8 / 5 * 1 H K x I S C M O S S IN G L E V O L T A G E F L A S H E E P R O M 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles

TC581282A

Abstract: TC581282AXB NU 31
Contextual Info: TC581282AXB TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 128-MBIT 16M x 8 BITS CMOS NAND E PROM DESCRIPTION The TC581282A is a single 3.3 V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks. The device has a 528-byte

49f002

Contextual Info: Features • Single-voltage Operation - 5V Read - 5V Reprogramming • Fast Read Access Time - 55 ns • Internal Program Control and Timer • Sector Architecture - One 16K Byte Boot Block with Programming Lockout - Two 8K Byte Parameter Blocks - Two Main Memory Blocks 96K, 128K Bytes

TC58NS256ADC

Contextual Info: TC58NS256ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 256-MBIT 32M x 8 BITS CMOS NAND E PROM (32M BYTE SmartMedia ) DESCRIPTION The TC58NS256A is a single 3.3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable