TC58DVM82A1XBJ1 Search Results
TC58DVM82A1XBJ1 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| TC58DVM82A1XBJ1 |
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256 MBit (32M x 8 Bit) CMOS NAND E2PROM | Original | 329.97KB | 32 |
TC58DVM82A1XBJ1 Price and Stock
Toshiba America Electronic Components
Toshiba America Electronic Components TC58DVM82A1XBJ1ABH256-MBIT (32M X 8 BITS) CMOS NAND E2PROM EEPROM, 32MX8, 35ns, Serial, CMOS, PBGA56 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TC58DVM82A1XBJ1ABH | 8 |
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TC58DVM82A1XBJ1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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TC58DVM82A1XBJ1Contextual Info: TC58DVM82A1XBJ1 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT 32M u 8 BITS CMOS NAND E2PROM DESCRIPTION The device is a 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 2048 blocks. The device uses single power supply (2.7 V to 3.6 |
Original |
TC58DVM82A1XBJ1 256-MBIT 528-byte TC58DVM82A1XBJ1 |