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Toshiba America Electronic Components


Toshiba America Electronic Components TC58DVM72A1TG00 Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	TC58DVM72A1TG00		23,005			1 - 10 - 100 - 1000 - 10000 -	Get Quote

TC58DVM72A1TG00 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TC58DVM72A1TG00 Contextual Info: TC58DVM72A1TG00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 16M x 8 BITS CMOS NAND E2PROM DESCRIPTION Lead-Free The device is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks. The device uses single power supply (2.7 V to 3.6	Original	TC58DVM72A1TG00 128-MBIT 528-byte TC58DVM72A1TG00	PDF

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TC58DVM72A1TG00

Contextual Info: TC58DVM72A1TG00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 16M x 8 BITS CMOS NAND E2PROM DESCRIPTION Lead-Free The device is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks. The device uses single power supply (2.7 V to 3.6

Original

TC58DVM72A1TG00 128-MBIT 528-byte TC58DVM72A1TG00

PDF