A14 TRANSISTOR Search Results

mpsa14

Abstract: MPS-A13 pnp MPSA65 MPS-A14 MPS-A65 Xl03 mpsa66 T0-92A MPS-A13 MPS-A66
Contextual Info: MPS MPS MPS MPS THE MPS-A1 5 , MPS-A14 NPN AND MPS-A 6 5 , MPS-A66 (PNP) ARE SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS FOR AF AMPLIFIERS REQUIRING HIGH INPUT IMPEDANCE. A13 A14 A65 A66 CASE T 0 -9 2 A EBC ABSOLUTE MAXIMUM RATINGS MPS-A13(HPN) MPS-A14(NPN.)

MPS-A13

Abstract: MPS-A14
Contextual Info: 111 E SOLID STATE 3875081 G E SOLID STATE DE~| 3ñ?5Qñl □ □IT'ifi? 1 01E 17987 D Signal Transistors MPS-A13, MPS-A14 T '¿< 7 « 2 7 Silicon Darlington Transistors TO-92 The GE/RCA M P S-A 13 and A14 are planar epitaxial passiva­ ted N PN silicon Darlington transistors designed for preampli­

MPSA13

Contextual Info: MPS MPS MPS MPS THE MPS-A15» MPS-A14 NPN AND MPS-A6 5 , MPS-A66 (PNP) ARE SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS FOR AF AMPLIFIERS REQUIRING HIGH INPUT IMPEDANCE. A13 A14 A65 A66 CASE T O -9 2 A EBC ABSOLUTE MAXIMUM RATINGS F o r p - n p d .vice i, v o lu a * and currant v a lu « a n n e ^ a llx .

MPSA13M

Abstract: MPSA DARLINGTON MPS-A13 MPS-A14 MPSA 13
Contextual Info: MPS-A13 SILICON MPS-A14 NPN SILICON DARLINGTON TRANSISTORS NPN SILICON DARLINGTON AMPLIFIER TRANSISTORS . . . designed for pre-amplifier input applications requiring high input impedance. • High D C Current Gain @ lc - 10 m A d c hFE = 5,000 (Min) M P S-A 1 3

EM51L256A-15J

Abstract: Etron Technology
Contextual Info: EtronTech Em51L256A 3.3V 32K x 8 High Speed SRAM Preliminary, 3/96 Features Pin Assignment 28-Pin 300-mil DIP and SOJ • Fast Access Time: 10ns/12ns/15ns • 32K x 8 Organization A14 1 28 Vcc A12 2 27 WE# A7 3 26 A13 A6 4 25 A8 • Low Power Consumption A5

EM51M256A-15P

Abstract: Em51M256A-15 Etron Etron Technology ISB12 Em51m256
Contextual Info: EtronTech Em51M256A 3.3V I/O 32K x 8 High Speed SRAM Preliminary, 3/96 Features Pin Assignment 28-Pin 300-mil DIP and SOJ • Fast Access Time: 10ns/12ns/15ns • 32K x 8 Organization A14 1 28 Vcc A12 2 27 WE# A7 3 26 A13 A6 4 25 A8 • Advanced CMOS Process

EM51256C-15P

Abstract: em51256 Etron Technology EM51256C-10J
Contextual Info: EtronTech Em51256C 32K x 8 High Speed SRAM Preliminary, 3/96 Features Pin Assignment 28-Pin 300-mil DIP and SOJ • Fast Access Time: 10ns/12ns/15ns • 32K x 8 Organization A14 1 28 Vcc A12 2 27 WE# A7 3 26 A13 A6 4 25 A8 • Low Power Consumption A5 5 24

MPS-A15

Abstract: ic 4565 mpsa15 MPSA13 MPSA66 MPS-A13 MPS-A14 MPS-A65 MPS-A66 MPS-A13 pnp
Contextual Info: • w ■■ ni MPS - A65 MPS - A66 THE MPS-A1 5 , MPS-A14 NPN AND MPS-A6 5 , MPS-A66 (PNP) A R E SILICON PLANAR EPITAXIAL CASE T O -9 2 A DARLINGTON TRANSISTORS FOR A F AMPLIFIERS REQUIRING HIGH INPUT IMPEDANCE. EBC ABSOLUTE MAXIMUM RATINGS F o r p - n p d . v i c e i , v o ltag » a n d c u r ra n t v a l u « a n n t o a ' l x .

2sk303

Abstract: 2SK2219 2SK283 sk184 2SK2171 SK174 2SK436 2SK848 P/N146071 2sd22
Contextual Info: SA0YO Lists for- Type No . Ind icat ion on Transistors. 2 SA t y p e Type No. 2 S A1 2 5 2 2SA1256 2 S A 12 5 7 2 S A1 3 3 1 2 S A13 3 8 2 S A 13 41 2 S A13 4 2 2SA1343 2 S A 13 4 4 2 S A 14 1 5 2 S A 14 1 6 2 S A 14 1 7 2 S A1 4 1 8 2 S A1 4 1 9 2 S A14 3 4

CDM62256-10

Contextual Info: H A RR IS S E M I C O N D S E C T O R 37E D • 4 3 0 5 27 1 D D S a b S l 7 « H A S Random-Access Memories RAMs . T -4 6 -2 3 -1 4 CDM62256 A14- 1 28 — A t2 — 2 A7— Î 27 - W Ï 26 - At 3 AS — 4 A ft — 9 A 4 - 6 A3 — A2 — 7

Contextual Info: g £ SOLID STATE 3875081 ~ G E SOLID Öl DE | 3ö?SGöl D017TÖ7 1 STATE 01E 17987 D _ !_ !_ !_ Signal Transistors MPS-A13, MPS-A14 T ,2 <7-27 Silicon Darlington Transistors TO-92 T h e G E /R C A M P S -A 1 3 a n d A 1 4 a re p la n a r e p ita x ia l p assivate d N PN silico n D a rlin g to n tra n s is to rs d e sig n e d fo r p re a m p lifie r in p u t a p p lic a tio n s w h e re h ig h im p e d a n c e is a

transistor GW 93 H

Abstract: 11 ak 30 a4
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD431231L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT PIPELINED OPERATION Description The µPD431231L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD431632L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT PIPELINED OPERATION Description The µPD431632L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD431532L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT FLOW THROUGH OPERATION Description • The µPD431532L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD431532L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT FLOW THROUGH OPERATION Description The µPD431532L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD431632L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT Description The µPD431632L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD431536L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT FLOW THROUGH OPERATION Description The µPD431536L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD431231L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT PIPELINED OPERATION Description The µPD431231L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD431636L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT PIPELINED OPERATION Description The µPD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

TQFP 14X20

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD431636L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT Description The µPD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD431632L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT PIPELINED OPERATION Description The µPD431632L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD431636L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT PIPELINED OPERATION Description The µPD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Transistor A14

Contextual Info: TS13002HV High Voltage NPN Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 450V BVCBO 900V IC 0.8A VCE SAT Features ● High Voltage ● High Speed Switching 0.6V @ IC=0.2A, IB=0.04A Block Diagram Structure ● Silicon Triple Diffused Type

Contextual Info: TS13002HV High Voltage NPN Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 450V BVCBO 900V IC 0.8A VCE SAT Features ● High Voltage ● High Speed Switching 0.6V @ IC=0.2A, IB=0.04A Block Diagram Structure ● Silicon Triple Diffused Type