D017T Search Results

Contextual Info: g £ SOLID STATE 3875081 ~ G E SOLID Öl DE | 3ö?SGöl D017TÖ7 1 STATE 01E 17987 D _ !_ !_ !_ Signal Transistors MPS-A13, MPS-A14 T ,2 <7-27 Silicon Darlington Transistors TO-92 T h e G E /R C A M P S -A 1 3 a n d A 1 4 a re p la n a r e p ita x ia l p assivate d N PN silico n D a rlin g to n tra n s is to rs d e sig n e d fo r p re a m p lifie r in p u t a p p lic a tio n s w h e re h ig h im p e d a n c e is a

S7430

Abstract: 2N3650 2N3653 2N3651 2N3652 RCA-2N3650 hall ic 01e S7410M rca solid state Linear RCA SCR 2n
Contextual Info: G E SOLID STATE 3875081 DE I 3fl7S0fil D017ti7a T □ 1 G E SOLID STATE 0 1 E 1 76 7 2 Silicon Controilea H e c tm e rs _ ¿N3650, 2N3651, 2N3652, 2N3653, S7410M File Number 408 35-A Silicon Controlled Rectifiers T ER M IN A L D ESIGN ATIO NS For Inverter Applications

MSM5116180-70

Abstract: MSM5116180-80
Contextual Info: O K I Semiconductor MSM5116180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.

STR06

Contextual Info: MITSUBISHI M E M O R Y / A S I C blE D • b 2 4 cifiSS O O l V b ? 1* 5 3 ^ ■ M I T I M ITSUBISHI L S Is M 5 M 4 V 4 2 6 0 J , L , T P , R T - 6 , - 7 , - 8 , - 6 S , - 7 S , - 8 S FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM \T A f i

Contextual Info: á P * S M F -0 3 1 0 0 B ELECTRONICS Sam sung M icrow ave Sem ico nd ucto r G e lili O p tÍV H ÍZ G C l G aAs FET 2-20 GHz Description Features The SMF-03100 is a 300 |im n-channel MESFET with 0.5 nm gate length, utilizing Samsung Microwave’s gain optimized G10 process. Ti/Pt/Au gate metallization and

53-06A

Abstract: 2n5306 2N5305
Contextual Info: G E SOLI» STATE ~~ Gl DeT| 3fl75Dfll OG17c]47 D r - ^ 7 - ¿ 7 Transistors 2N5305, 6, 6A, GES5305, 6, 6A Silicon Darlington Transistors TO-92 TO-98 The GE/RCA 2N5305, 06, 06A and GES5305, 6, and 6A are

TC9121P

Abstract: TC9138AP toshiba tc9121p
Contextual Info: í¿¡üéU Unit in mm TC9138AP AUTOMATIC PROGRAM SEARCH IC FOR TAPE RECORDER TC9138AP is an automatic music selector IC for searching programs on the tape of a cassette tape recorder, etc., being capable of automatically selecting music up to 15 programs at maximum.

CXP80524

Contextual Info: SONY» _ CXP80520/80524 CMOS 8-bit Single Chip Microcomputer Description The C X P80520/80524 is a CMOS 8-bit microcomputer which consists of arithmetic coprocessor, A / D converter, serial interface, timer / counter, time base timer, vector interruption, high precision timing pattern

ON4033

Abstract: sef150 I747 sef152 SEF151
Contextual Info: S G S-THOnSON Q7E J> | 7 ^ 2 3 7 • 73C 17470 ; \ j -, >' N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors. ABSOLUTE M A X IM U M RATINGS

Contextual Info: Optical disc ICs 4-channel BTL driver for CD player and CD-ROM drives BA5921FP The BA5921FP is an IC with an internal 4-channel BTL driver for CD players and CO-ROM driver actuators and mo­ tors, as well as an internal standard operational amplifier. In addition, the 28-pin HSOP package allows for applica­

m51171

Abstract: m32AG M5116
Contextual Info: OKI Semiconductor MSM5116180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.

uras 4

Abstract: uras 2 5116100
Contextual Info: OKI Semiconductor MSM5117190 1,048,576-Word x 18-Bit D Y N A M IC RA M : FAST P AG E M O D E TYPE DESCRIPTION The MSM5117190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117190 is OKI's CMOS silicon gate process technology.

Contextual Info: H igh p erform ance 256KX8 3V CMOS Flash EEPROM H AS29LV002 A 2S6KX8 CMOS Flash EEPROM Prelim inary inform ation Features • O rg a n iz a tio n : 256 K X 8 • S ecto r a rc h ite c tu re - O ne 16K; tw o 8K; one 32K; and three 64K byte sectors - Boot code sector architecture— T top o r B (bottom )

Contextual Info: F U J I TS U M I C R O E L E C T R O N I C S 47E ]> • 374<i7b2 0 0 1 7 b l 2 0 ■ F M I "7^52.-33- C S C ontents SP A R C l i te U s e r ' s Guide K*Mt t ««KKMM«««K Chapter 1 : G eneral 1.1 F e a tu r e s . 1-1

GES5307

Abstract: 2n5307 2N5308 2N5308A GES5308 GES5308A
Contextual Info: ~q £ SOLID STATE 01 DE 1 3fl750âl 0017^51 S | 3875081 G E SOLID STATE 01E 17951 D Signal Transistors 2N5307, 8, 8A, GES5307, 8, 8A -p z i Silicon Darlington Transistors TO-92 TO-98 The GE/RCA 2N5307, 08, 08A and GES5307, 8, and 8A are planar, epitaxial, passivated NPN silicon Darlington transis­

Contextual Info: MITSUBISHI <Dig./Ana. INTERFACE? M 51996P ,FP SW ITC H IN G REGULATOR CONTROL DESCRIPTION M51996 is th e prim ary s w itc h in g re gulato r c o n tro lle r w hich PIN CONFIGURATION TOP VIEW is e s p e c ia lly desig ned to g e t th e re gulate d DC vo lta g e

2N3658

Abstract: 2N3657 S7412M 2N3654 17681 2N3655 2N3656 SCR 2N 689 RCA-2N3654 S7432M
Contextual Info: G E SOLID 01 STATE 3875081 dËT| 3fl7SGfll OGlTbTfl □ f G E SO LI D STATE 01E 17678 D T-2S-/7 Silicon Controlled Rectifiers _ 2N3654, 2N3655, 2N3656, 2N3657, 2N3658, S7412M File Num ber 724

Contextual Info: ADVANCE 2, 4 MEG X 64 SDRAM DIMMs MICRON I TECHNOLOGY, INC. SYNCHRONOUS DRAM MODULE MT8LSD T 264A MT16LSD(T)464A FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JEDEC-standard 168-pin, dual in-line memory module (DIMM) • Utilizes 83 and 100 MHz SDRAM components

schaffner vc

Contextual Info: y _ U IM ITR O D E UC5350 CAN Transceiver PRELIMINARY FEATURES DESCRIPTION • The UC5350 Control Area Network Transceiver is designed for industrial applications employing the CAN serial communications physical layer per ISO 11898 standard. The device is a high speed transceiver de­

scr 2N3525

Abstract: RCA 2N3525 2N3525 2N4101 2N3228 TA1225 TA2773 TAT222
Contextual Info: G E SOLI » STAT E 3 875081 G E SOL ID S T A T E _ • File Num ber 114 01E 17669 D Silicon Controlled Rectifier* 2N3228, 2N3525, 2N4101 5-A Silicon Controlled Rectifiers TERM,K For Low -C ost Pow er-C ontrol and Pow er-Sw itching Applications

2N5305

Abstract: "to-98" package 2N5306 to-98 2N5306 2N5306 equivalent GES5305 2N5306A GES5306 GES5306A TO-98
Contextual Info: G E SOLI» STATE ~~ ~~ Gl DËT| 307SDÛ1 OG17c]47 D T ~ * 7 ~ z 7 Signal Transistors 2N5305, 6, 6A, GES5305, 6, 6A Silicon Darlington Transistors TO-92 TO-98 T h e G E / R C A 2N5305, 06, 06A and G E S 5 3 0 5 , 6, and 6A are