A13 Search Results

tdb 0117

Abstract: 32-PIN
Contextual Info: SPACE ELECTRONICS INC. 128K X 8-BIT EEPROM SPACE PRODUCTS 28LV010RP VCC 1 RDY/BUSY 32 A15 A14 RES RES A12 WE OE A7 A13 A6 A8 CE A5 A9 WE A11 RES A3 SEi 28LV010RP A2 OE High Voltage Generator VSS A16 A4 16 VCC CE A0 I/O7 I/O0 I/O6 I/O1 I/O5 I/O2 I/O4 VSS I/O3

F5401

Abstract: io 1207 100MHZ 54-PIN F5402
Contextual Info: PRELIMINARY SPACE ELECTRONICS INC. 1 GIGABIT SYNCHRONOUS DRAM SPACE PRODUCTS VDD 1 97SD10004RP 54 VSS CS 7 NC VDDQ VSSQ CS 6 NC DQ0 DQ3 VSSQ VDDQ CS 5 NC CS 4 NC VDDQ VSSQ CS 3 NC DQ1 DQ2 VSSQ VDDQ CS 2 VDD VSS CS 1 NC/RFU WE DQM NC/A13 CAS CLK RAS CKE CS 0

smd transistor a9

Abstract: a15 SMD A19 SMD smd marking A5 10 35L A16 SMD SMD A18 Transistor SMD a7 Transistor smd diode a5 MT5C1001
Contextual Info: SRAM MT5C1001 Limited Availability Austin Semiconductor, Inc. 1M x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-92316 • MIL-STD-883 A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE\ Vss FEATURES •

A1381

Abstract: A1381EUA-T A1382 A1383 A1384 Hall Effect Current Measurements DSA0029102
Contextual Info: A1381, A1382, A1383, and A1384 Programmable Linear Hall Effect Sensors with Analog Output Available in a Miniature Thin Profile Surface Mount Package Features and Benefits Description ▪ Customer programmable offset, sensitivity, sensitivity temperature coefficient, and polarity

A1354

Abstract: hall sensor 4-pin SIP a1354kkt-t
Contextual Info: A1354 High Precision 2-Wire Linear Hall Effect Sensor with Pulse Width Modulated Output Features and Benefits Description ▪ Designed for automotive, battery-powered applications ▪ Customer programmable quiescent duty cycle, sensitivity, and PWM carrier frequency, through VCC pin

A1302KUA-T

Abstract: A1301 A1302EUA 1302 allegro hall effect linear hall effect sensors A1302 A1301EUA-T A1301KLHLT-T A1301KUA-T A1302ELHLT-T
Contextual Info: A1301 and A1302 Continuous-Time Ratiometric Linear Hall Effect Sensors Features and Benefits Description ▪ ▪ ▪ ▪ ▪ ▪ The A1301 and A1302 are continuous-time, ratiometric, linear Hall-effect sensors. They are optimized to accurately provide a voltage output that is proportional to an applied magnetic

34-PIN

Abstract: DS1345 DS1345W DS9034PC
Contextual Info: DS1345W PRELIMINARY •»Ai g j i c U A L L A O s e m ic o n d u c to r FEATURES DS1345W 3.3V 1024K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT • 10 years m inim um data retention in the absence of external power NC NC A14 A13 A12 A11 A10 A9 A8

1311

Contextual Info: a|31]o a|31]o « fu i» «1311» «1311» «1311o «1311» «1311» «1311» 311° ° 311° a13110 Zi £R * 5 S 3 a|31]o a|31]o «HHI» 0(311° o l 3 I E k> t l °( °( 311° °( 311° °l 311° « in s » « m i» « m i» « m ie « 1 3 ll|o £ ? * 2 ?

CGB4B3X7R0J225K055AB

Contextual Info: MULTILAYER CERAMIC CHIP CAPACITORS CGB Series Commercial Grade Low Profile Type: CGB2 [EIA CC0402] CGB3 [EIA CC0603] CGB4 [EIA CC0805] Issue date: January 2013 Version A13 MULTILAYER CERAMIC CHIP CAPACITORS REMINDERS Please read before using this product SAFETY REMINDERS

monitor btc

Abstract: McKenzie 34-PIN DS1330 DS1330AB DS1330Y DS1330Y-70
Contextual Info: DS1330Y/AB P R E L IM IN A R Y I a D S 1 3 3 0 Y /A B m U A L L A 9 256K Nonvolatile SRAM w jth ¿attery Monitor s e m ic o n d u c t o r PIN ASSIGNMENT FEATURES • Built-in lithium battery provides more than 10 years of data retention NC NC A14 A13 A12 A11

9407a

Abstract: BPF-A1340 PL-227 048002
Contextual Info: Surface Mount Bandpass Filter 50Ω BPF-A1340+ 1000 to 1800 MHz Features Maximum Ratings o Operating Temperature Storage Temperature RF Power Input o -40 C to 85 C -55oC to 100oC 1W at 25oC • • • • Good VSWR, 1.4:1 Typ @ Passband High Rejection Shielded case

Contextual Info: Package outline HLQFN78R: plastic thermal enhanced low profile quad flat package; no leads; 78 terminals; resin based; body 12 x 12 x 1.15 mm B D SOT967-1 A terminal 1 index area E A detail X e1 eR L1 L D2 A14 v w b e A26 B10 D3 A13 M M C C A B C y1 C y A27

TMS27C128

Abstract: 74HC04 PA15 TMS320 TMS320P25
Contextual Info: TMS320P25 DIGITAL SIGNAL PROCESSOR SPRS028 – OCTOBER 1994 CLKR CLKX V CC V CC 63 VSS VSS VCC 3 62 A15 VCC 4 61 A14 CLKX 5 60 A13 VSS 6 59 A12 CLKR 7 58 VSS RS 8 57 A11 READY 9 56 A10 HOLD 10 55 A9 BIO 11 54 A8 MP / MC 12 53 D15 13 52 VCC VCC VSS 14 51 A7

DPDD192MX8XSBY5

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 1.5 Gigabit CMOS DDR SDRAM DPDD192MX8XSBY5 • • R I T FEATURES: O • • • • • VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC NC VDDQ NC A13 VDD DNU CS2 WE CAS RAS CS0 CS1 BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1

A1302

Abstract: A1302EUA-T "Hall Effect Sensors" A1301EUA-T A1302KUA-T A1301ELHLT-T A1301EUA A1302EUA A1301 a1302k
Contextual Info: A1301 and A1302 Continuous-Time Ratiometric Linear Hall Effect Sensors Features and Benefits Description ▪ ▪ ▪ ▪ ▪ ▪ The A1301 and A1302 are continuous-time, ratiometric, linear Hall-effect sensors. They are optimized to accurately provide a voltage output that is proportional to an applied magnetic

Contextual Info: SPACE ELECTRONICS INC. 256 KBIT 32K X 8-BIT CMOS SRAM SPACE PRODUCTS A14 32C2568ERP 28 1 VCC A12 WE A7 A13 A6 A8 A5 A9 A4 A11 A0 VCC MEMORY ARRAY 256 x 128 x 8 ROW DECODER A3 OE SEi 32C2568RP A2 CS A0 I/O8 I/O1 I/O7 I/O2 I/O6 I/O3 I/O5 GND 14 A7 I\O1 COLUMN I/O

0016J

Abstract: a1370 HA-A1370
Contextual Info: CRYSTAL CLOCK OSCILLATORS Data Sheet 0016J Rev. J CMOS Compatible Enable/Disable HA-A1370/A1380 Series Description The HA-A1370 Series of quartz crystal oscillators provide enable/disable 3-state CMOS compatible signals for bus connected systems. Supplying Pin 1 of the HA-A1370 units with a logic “0" enables the output on

44-PIN

Abstract: LH532048 QFJ044-P-0650
Contextual Info: LH532048 • Access time: 100 ns MAX. 40-PIN DIP 40-PIN SOP TOP VIEW • Static operation NC 1 40 VCC CE 2 39 NC • TTL compatible I/O D15 3 38 A16 4 • Three-state outputs D14 37 A15 D13 5 36 A14 • Single +5 V power supply D12 6 35 A13 D11 7 34 A12

Contextual Info: DS1613D DALLAS DS1613D Partitioned SmartSocket 1M s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Accepts standard 128K x 8, CMOS static RAM | Vcc A16 31 1 A15 A14 301 NC | WE 28 1 A13 32 • Embedded lithium energy cell retains RAM data • Self-contained circuitry safeguards data

a13n

Contextual Info: C orporate Hom e | Electronic Components | Se gm e nts | W ho W e Are My Account Searc h Products Documentation Resources My Account Customer Support Home > Products > By Type > Pin & Socket C onnectors > Product Feature Selector > Product Details M83513/04-A13N Product Details

Contextual Info: CRYSTAL CONTROLLED 630 OSCILLATORS 14 PIN DIP ECL PLL FREQUENCY MULTIPLIER CONNOR WINFIELD AURORA, IL 60505 PHONE 8 5 1 -4 7 2 2 FAX (63 0) 8 5 1 -5 0 4 0 www.conwin.com A13-52* G A13-53* G A13-54* G A13-62* G A13-63* A13-64* SPECIFICATIONS 120 144 174

DS1630AB-120

Contextual Info: DS1630Y/AB DALLAS DS1630Y/AB SEMICONDUCTOR Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power Vcc WE • Data is automatically protected during power loss A13 • Directly replaces 32K x 8 volatile static RAM or

max 619 cs ac

Contextual Info: SEi - Radiation Hardened 32C408RP 4 Megabit 512k x 8-bit CMOS SRAM A18 1 32 Vcc A15 A16 A14 A17 A12 A7 WE A13 A6 A8 A5 A9 SEi 32C408RP A4 A3 A11 A2 OE A10 A1 A0 CS I/O7 I/O0 I/O6 I/O1 I/O5 I/O2 Vss I/O4 16 17 I/O3 Features: •RAD-PAK Technology Hardened Against

32C108BRP-20

Abstract: 1 megabit 128K x 8 SRAM
Contextual Info: SPACE ELECTRONICS INC. 1 MEGABIT 128K X 8-BIT CMOS SRAM SPACE PRODUCTS 32C108BRP Clk Gen. 1 32 A1 A2 A16 A15 A14 A13 A3 CS A2 A3 A4 A10 SEi Vss A11 32C108BRP Vcc I/O3 I/O6 I/O5 WE A4 A12 A11 A5 A10 A9 A8 16 17 A5 Memory Array 512 Rows 256 x 8 Columns Data