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Eaton Corporation A103108B7 - Bulk (Alt: A103108B7)
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Avnet Americas	A103108B7	Bulk			100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	A103108B7					1 $9.43 10 $6.69 100 $4.83 1000 $4.21 10000 $4.21	Get Quote
Eaton Bussmann A103108B7 Barrier Terminal Blocks BARRIER STRIP, A1000
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Sager	A103108B7					1 - 10 - 100 - 1000 - 10000 -	Buy Now

A103108 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The DN2530 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.	Original	DN2530 DN2530 DSFP-DN2530 A103108	PDF
Contextual Info: DN3145 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage The Supertex DN3145 is a depletion-mode normally-on	Original	DN3145 DN3145 DSFP-DN3145 A103108	PDF
Contextual Info: LND250 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND250 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown	Original	LND250 DSFP-LND250 A103108	PDF
DN2530 Abstract: siemens N3 relay 125OC DN2530N3-G DN2530N8-G DN5TW Contextual Info: DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The DN2530 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.	Original	DN2530 DN2530 DSFP-DN2530 A103108 siemens N3 relay 125OC DN2530N3-G DN2530N8-G DN5TW	PDF
mos fet marking k4 Abstract: dn37 DN3765 DN3765K4-G Contextual Info: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination	Original	DN3765 DSFP-DN3765 A103108 mos fet marking k4 dn37 DN3765 DN3765K4-G	PDF
transistor MARKING K4 Contextual Info: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination	Original	DN3765 DSFP-DN3765 A103108 689-DN3765K4-G DN3765K4-G transistor MARKING K4	PDF
Contextual Info: DN3535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description This low threshold depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the	Original	DN3535 DSFP-DN3535 A103108	PDF
Contextual Info: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of	Original	DN3765 DSFP-DN3765 A103108	PDF
Contextual Info: DN1509 N-Channel Depletion-Mode Vertical DMOS FET Features General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakages The Supertex DN1509 is suitable for high voltage transient	Original	DN1509 DN1509 DSFP-DN1509 A103108	PDF
MARKING G3 Transistor Contextual Info: VN2222NC N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex VN2222NC is an enhancement-mode normallyoff transistor array consisting of four N-channel MOSFETs in a 20-Lead ceramic side-brazed DIP package. These transistors	Original	VN2222NC 20-Lead DSFP-VN2222NC A103108 MARKING G3 Transistor	PDF
125OC Abstract: DN3145 DN3145N8-G Contextual Info: DN3145 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The Supertex DN3145 is a depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.	Original	DN3145 DN3145 DSFP-DN3145 A103108 125OC DN3145N8-G	PDF
fet sot-89 marking code Abstract: FET SOT-89 N-Channel fet sot-89 product marking automobile drawings 125OC DN1509N8-G Contextual Info: DN1509 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► The Supertex DN1509 is suitable for high voltage transient protection for LDO in automobile applications during “load dump” conditions. High input impedance	Original	DN1509 DN1509 DSFP-DN1509 A103108 fet sot-89 marking code FET SOT-89 N-Channel fet sot-89 product marking automobile drawings 125OC DN1509N8-G	PDF
DN5SW Abstract: DN3535N8-G dn5s 125OC DN3535 marking code sot-89 AA Contextual Info: DN3535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► This low threshold depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing	Original	DN3535 DSFP-DN3535 A103108 DN5SW DN3535N8-G dn5s 125OC DN3535 marking code sot-89 AA	PDF
LN1E Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown	Original	LND150 DSFP-LND150 A10310808 LN1E	PDF