A 933 S TRANSISTORS Search Results

A 933 S transistors

Contextual Info: Transistors General Purpose Transistor -50V, 0.15A 2 S A 1037 A K / 2 S A 1576 A / 2 S A 1774 / 2 S A 933 A S • Features 1 ) Excellent I i f e linearity. 2) Complements the 2SC2412K/ 2SC4081 /2SC4617 / 2SC1740S. •E x te rn a l dimensions (Units: mm)

transistor SMD 1p6

Abstract: SMD transistor n36 TRANSISTOR N36 SMD report on colpitts oscillator a 933 transistor Transistor 933 smd n43 transistor A 933 BFG520 A3 smd transistor spec
Contextual Info: Philips Semiconductors 933 MHz low power downconverter with 60 MHz I.F. ^ lcatlon rePort 933 \r H z L O W P O W E R D O W N C O N V E R T E R W IT H 60 M H z I.F . Introduction This application note describes the performance o f a 900 M Hz low voltage 3 volt dow nconverter

socket AM2 pinout

Abstract: intel pentium 4 motherboard schematic diagram PGA370 pinout motherboard agtl layout manual components celeron pga370 MOTHERBOARD CIRCUIT diagram ink cartridge electrical pinout FC-PGA370 PGA370 motherboard agtl layout manual Socket AM2 Processor Functional Data Sheet
Contextual Info: Pentium III Processor for the PGA370 Socket at 500 MHz to 933 MHz Datasheet Product Features • ■ ■ ■ ■ ■ ■ Available in 933, 866, 800EB, 733, 667, 600EB, and 533EB MHz for a 133 MHz system bus Available in 850, 800, 750, 700, 650, 600E, 550E, and 500E MHz for a 100 MHz system

A 933 S transistors

Abstract: 2SB1361 2SD2052 IS020
Contextual Info: Power Transistors 2SD2052 2SD2052 Silicon Triple-Diffused Planar Type Package Dimensions High Powe< Amplifier Complementary Pair with 2SB1361 • Features Unit *. mm 5.2max. ' / 3.2 , 15.5max. , 6.9min. • V ery good lin earity o f DC c u r re n t gain hKF

A 933 S transistors

Abstract: br 2222 npn npn 2222 N 2222 2221-2N 2N2222 2N2221 Q62702-F134 Q62702-F135 Q68000-A4573
Contextual Info: 2SC D • 6 2 3 S b O S GDGHflflb 3 H S I E < S Z 5C CK886 D NPN Silicon Planar Transistors 2 N 2220 2 N 2221 2 N 2222 'S IE M E N S AKTIENGESELLSCHAF 2 N 2 2 2 0 , 2 N 2221, and 2 N 2 2 2 2 are epitaxial NPN silicon planar transistors in TO 18 case 18 A 3 DIN 41 8 7 6 . The collector is electrically connected to the case. The transistors

A 933 S transistors

Abstract: N 2222 2N222 2221-2N TE 2221
Contextual Info: 2SC D • 6 2 3 S b O S GDGHflflb 3 H S I E < S Z 5C CK886 NPN Silicon Planar Transistors D 2 N 2220 2 N 2221 2 N 2222 ' S I E M E N S AKTIENGESELLSCHAF 2 N 2 2 2 0 , 2 N 2221, and 2 N 2 2 2 2 are epitaxial N P N silicon planar transistors in TO 18 case 18 A 3 D IN 41 876 . The collector is electrically connected to the case. The transistors

A933S

Abstract: A 933 S A 933 S transistors A933 sc1740 2SC1740SLN 2SA933 2SC1740l
Contextual Info: K -y > y X £ /Transistors 2SC1740LN/2SC1740SLN 2 S C 1 7 4 0 LN " w W • m4 U M 5 L N • h7>y*$ NPN y y □ > Frecl- Low Noise AmPEpitaxial Planar NPN Silicon Transistors • ÿ H f iv H ill/ D im e n s io n s Unit : mm 1) V CE(sa.)=0.04V(at 10mA) ¿ l ' 0

2SC200

Abstract: 2SA923 Transistor AF 138 2SC2089 2SC1908 2SC1740 transistor 2SC805A 138D 2SC1740 2SC2021
Contextual Info: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2SD927

Abstract: transistor u8 2w 138D transistor st 932
Contextual Info: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

BUZ73

Abstract: SD2822 7a2 diode diode 935 lg LG 932
Contextual Info: SIEMENS BUZ 73 BUZ 73 A SIPMOS Power MOS Transistors VDS = 200 V /q = 7 .0 /5 .5 A ^os on ~ 0 .4 /0 .6 Q • N channel • Enhancem ent mode • A valanche-proof • Package: TO -220 A B 1) TVpe Ordering code BUZ 73 C 6 7 0 7 8 -S 1 31 7-A2 BUZ 7 3 A C 6 70 78-S 1 31 7-A 3

2SA850

Abstract: TRANSISTOR 2SA850 1729H 2SC1721 2SA854 2SA933
Contextual Info: - 5 - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

Contextual Info: N AMER PHI LIP S/ DIS CR ETE b'lE » bbSa'm DOaiSim T 73 BLW99 H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in ciass-AB and B operated high-power mobile transmitting equipment in the h.f. band. The transistors are resistance-stabilized and are guaranteed to withstand severe load mismatch conditions.

A 933 S transistors

Abstract: smps 450W ic F441 SGS transistors F341 f441 to3 HEATSINK SF341 aahp SGSIF341
Contextual Info: • 7^537 005.5177 _H ■ r 3 ._ SCS-THOMSON SGSF341/IF341 I*[hK»[I(OT(2 [*S SGSF441/IF441/F541 S G S - T HO MS ON 30E D FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS ■ H IG H S W IT C H IN G S P E E D N P N P O W E R TRANSISTO RS ■ HOLLOW EMITTER FOR FAST SW ITCHING

EC900

Abstract: BLW99 2 TMT 15-4
Contextual Info: PHILIPS IN TE RNATIONAL bSE T> 711002b m D0b3441 J 137 PHIN BLW99 H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB and B operated high-power mobile transmitting equipment in the h.f. band. The transistors are resistance-stabilized and are guaranteed to withstand severe load mismatch conditions.

IRF452

Abstract: IRF450
Contextual Info: h e o I MassMsa odgiitö □ | INTERNATIONAL Data Sheet No. PD-9.322I re c tifie r INTERNATIONAL RECTIFIER I«R T-39-13 REPETITIVE AVALANCHE AND dv/dt RATED* IRF45Q IRF451 IRF452 IRF453 HEXFET TRANSISTORS N-CHANNEL 500 Volt, 0.40 Ohm HEXFET TO-204AA TO-3 Hermetic Package

lt 934 transistor

Abstract: 2SK23 K2365 A 933 S transistors
Contextual Info: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTORS 2SK2365/2SK2366 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N -Channel PACKAGE DIMENSIONS in m illim eters M O S F ield Effect T ran sistor d esig ned for high voltag e sw itchin g

rca 2n3375

Abstract: 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor
Contextual Info: RF Power Transistors Featuring “overlay” Construction For HF-VHF-UHF Microwave Applications M olded-Silicone Hermetic Hermetic Hermetic Plastic Package Ceramic-Metal Ceramic-Metal Strip-L. Package Coaxial Package Small Ceramic-Metal Coaxial Package (Large)

A 933 S transistors

Abstract: S T A 933 2SD1987
Contextual Info: 2SD1987 h 7 > y ^ ^ /T ra n s is to rs 2SD1987 h 7 > y X $ Epitaxial Planar NPN Silicon Transistor Darlington Freq. Power Amp. • • i+Jfi^ iilS l/D im en sion s (Unit : mm) 1) u ; • h > í í i & i ? ' h FE 10.0 *•? 2) I 'V - X 4. 5 r 5 -y z-« • Features

icm555

Abstract: A 933 S transistors M 3329 B1 transistor st 932
Contextual Info: IN S T R -COPTO} 8961726 TEXAS 62C 3 6 9 3 0 IN S T R OPTO TIP150, TIPI 51, TIPI 52 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REV ISED O CTOBER 1984 • High Voltage, High Forward and Clamped Reverse Energy • 10 A Peak Collector Current •

Contextual Info: DTC143ZU/DTC143ZK/DTC143ZS/DTC143ZF DTC143ZL/DTC143ZA/DTC143ZV h 7 > y ^ ^ / T ransistors D T C 1 4 3 Z U /D T C 1 4 3 Z K /D T C 1 4 3 Z S D T C 1 4 3 Z F /D T C 1 4 3 Z L /D T C 1 4 3 Z A D TC143ZV SStrtiffii' 7 >->'*$ v>MV;V4i-r h 7 > y ^ ^ X < 7 ^ / T r a n s is t o r Switch

yageo Phycomp 0805 capacitor

Abstract: yageo mlcc yageo Phycomp 1206 capacitor fusistor yageo Phycomp NPO capacitor TIP 3055 JAPAN Yageo Ceramic multilayer NPO infrared heating gun IC1 7555 1808 FOOTPRINT
Contextual Info: High-voltage MLCCs for power applications T1 D5 D2 R6 C3 R5 TR2 R1 18 pF 3 kV C1 2600 Vrms TR1 C2 R4 R3 R2 www.yageo.com 14 13 12 11 10 9 CN2 D1 High-voltage MLCCs for power applications Switched-mode power supplies, DC-to-DC converters and DC-to-AC inverters are nowadays widely used in

A 933 S transistors

Abstract: relay array driver GENESIS 6000 cherry opto npn 8 transistor array LB 122 NPN 3000F 4000M pnp 8 transistor array DC linear regulator 5A circuits
Contextual Info: CH E R R Y S E M I C O N D U C T O R CORP ITE D • 5Gb7S5L. G G 0 1 b 3 T Q ■ — ■'T-MZ-Z. I 5 AMP SMART POWER MULTICHIP ARRAY MULTICHIP ARRAY IN A 24 LEAD BATWING SO FEATURES • • • • Power, linear and logic capability in the same package 5A max power output capability

A 933 S transistors

Abstract: VP0645N5 VP0650N2 VP06E
Contextual Info: VP 06E LJ S u p ertex inc. ✓jpv P-Channel Enhancement-Mode M B/ Vertical DMOS FETs Ordering Information Standard Commercial Devices f Order Number / Package BV dss / ^DS O N) *D|ON) b v dgs (max) (min) TO-39 TO-92 TO-220 DICE* -450V 3on -0.2A VP0645N2 VP0645N3

A 933 S transistors

Abstract: A933S A830-S a830s A854S 2sc low noise 2SC1645 933LN 2SD 92 M a1515s
Contextual Info: 7 T r a n s s tors ? TO-92, S PT (TO-92S Types Type Vhk <V) Function lc (mA) IGMa. (mA) 2SA 1137 -8 0 -1 0 0 Low rb b' H ead Am p 40 — 300 — 1 2 0 -5 6 0 -6 -2 -3 0 0 — 250 — 1 2 0 -5 6 0 -6 -1 0 300 — 250 250 120 - 560 6 10 -5 0 — 250 250 82 - 270