A 30 D Search Results

Contextual Info: DSEP 30-06A DSEP 30-06BR DSEP 30-06B HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V trr = 30/35 ns with soft recovery VRSM VRRM V V 600 600 600 600 600 600 Type A C DSEP 30-06A DSEP 30-06B DSEP 30-06BR TO-247 AD Version BR C C A A C TAB A = Anode, C = Cathode

30-06BR

Abstract: DSEC60-06A 3006A 30-06A DSEP30-06A
Contextual Info: DSEP 30-06A DSEP 30-06BR DSEP 30-06B HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V trr = 30/35 ns with soft recovery VRSM VRRM V V 600 600 600 600 600 600 Type A C DSEP 30-06A DSEP 30-06B DSEP 30-06BR ISOPLUS 247TM TO-247 AD Version A Version BR C C

Contextual Info: DSEP 30-12A DSEP 30-12AR HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 V trr = 40 ns with soft recovery VRSM VRRM V V 1200 1200 1200 1200 Type A C DSEP 30-12A DSEP 30-12AR TO-247 AD ISOPLUS 247TM Version A Version AR C C A A C TAB TAB A = Anode, C = Cathode

bf4 0c

Abstract: bridge RECTIFIER GI OSB9210 OSM9410 OSM9510 OSS9210 08M9110 SO-26 BB5 SOT23
Contextual Info: Silicon rectifier diodes and bridge m odules high voltage devices Type No. •f AV O SS9110- 3 t o -30 3,5 A (6 A in oil) OSS9210 - 3 t o <30 5A (20 A in oil) O SS9410- 3 t o -30 1 0A (30 A. in oil) O S B 9H O - 4 t o -30 7A (12 A in oil) OSB9210 - 4 t o -30

Contextual Info: DSSK 48-003B DSSK 48-003BS IFAV = 2x25 A VRRM = 30 V = 0.35 V VF Power Schottky Rectifier with common cathode Preliminary Data VRSM VRRM V V 30 30 30 30 TO-263 AB BS-Type Type A DSSK 48-003B DSSK 48-003BS C TO-220 AC (B-Type) D2 A C (TAB) A A A C A C (TAB)

Contextual Info: DSSK 48-003B DSSK 48-003BS IFAV = 2x25 A VRRM = 30 V VF = 0.35 V Power Schottky Rectifier with common cathode Preliminary Data VRSM VRRM V V 30 30 30 30 Type TO-263 AB BS-Type A DSSK 48-003B DSSK 48-003BS C TO-220 AC (B-Type) D2 A C (TAB) C A A C A C (TAB)

cd5918

Abstract: CM80-28R S175-28 BM80-28 CD2089 CD1979 a25-28 C2M50-28 CD2904 S80-12
Contextual Info: The many parts of power TABLE A HF 2-30 MHz Device Freq. MHz CTC14 CTC15 S10-12 S50-12 S80-12 S100-12 S10-28 S50-28 S100-28 S 175*28 S 15-50 S100-50 S 175-50 30 30 30 30 30 30 30 30 30 30 30 30 30 Device Freq. (MHz) A3-28 A25-28 A70-28 B3-28 B12-28 B25-28

MD8003

Abstract: 2N2453 2N2916 2N3726 MD7003A MD6001 MD6001F MD6002 MD6002F MD6003
Contextual Info: MULTIPLE SMALL-SIGNAL TRANSISTORS continued Dual Transistors (continued) ID ? 2 2 Subscript Ref. Point hFE1 MD6001 MD6001F MD6002 MD6002F CG CG CG CG .575 0.35 .575 0.35 A A A A 30 30 30 30 MD6003 MD6003F MD6100 MD6100F MD7000 MD7001 CA CA CA CA NA PA .575 A

MA717

Abstract: MA723 ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713
Contextual Info: - Ä fií H SSlOl HS S 1 0 2 H SU88 H SU276 MA2S728 MA2S784 MA4S713 M A 700 MA700A MA 704 MA704A MA704WA MA704WK M A 707 M A 713 MA714 M A 715 M A 716 M A 717 MA717WA £ tt Vr V (V) 30 30 70 10 3 30 30 30 15 30 15 30 30 15 30 15 30 B aL B ÍL B Ä B Ä fôT

MBR2545CT-1

Abstract: MBRB2545CT SMD-220 PD-21045 ir 21045
Contextual Info: Bulletin PD-21045 rev. A 07/06 MBRB25.CTPbF MBR25.CT-1PbF SCHOTTKY RECTIFIER 30 Amp IF AV = 30Amp VR = 35 - 45V Description/ Features Major Ratings and Characteristics Characteristics Values Units 30 A 30 A 35 - 45 V IFSM @ tp = 5 s sine 1060 A VF @ 30 Apk, TJ = 125°C

Contextual Info: DSEP 30-03A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 300 V trr = 30 ns with soft recovery Preliminary Data VRSM VRRM V V 300 300 Type A C TO-247 AD C DSEP 30-03A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Test Conditions Maximum Ratings IFRMS

Contextual Info: Bulletin PD-21045 rev. A 07/06 MBRB25.CTPbF MBR25.CT-1PbF SCHOTTKY RECTIFIER 30 Amp IF AV = 30Amp VR = 35 - 45V Description/ Features Major Ratings and Characteristics Characteristics Values Units 30 A 30 A 35 - 45 V IFSM @ tp = 5 s sine 1060 A VF @ 30 Apk, TJ = 125°C

30-04A

Contextual Info: DSEP 30-04A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 400 V trr = 30 ns with soft recovery Preliminary Data VRSM VRRM V V 400 400 Type A C TO-247 AD C DSEP 30-04A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS

H7545

Abstract: TR BC 817-25 BCV72 BCW31 BCW32 BCX20 BSS64 SOA05 70G45 B 250 C 100 K4
Contextual Info: a 7 SCS-THOMSON M DÊKOltLiÊTnSOlifflDËi SURFACE MOUNT DEVICES GENERAL PURPOSE & INDUSTRIAL SOT 23 SOT 23 NPN GENERAL PURPOSE TRANSISTORS v CEO •c ptot hpE @ *C UJ VCBO >o Type V (mA) 50* 50* 50* 30* 30* 30* 80 80 50 50 50 30 30 30 30 30 50 50 32 60

75N3LLH6

Abstract: STD75N3LLH6 smd diode code B4 ST STD75N3L STU75N3LLH6 095B4 75n3l TO-251 footprint
Contextual Info: STD75N3LLH6 STU75N3LLH6, STU75N3LLH6-S N-channel 30 V, 0.0042 Ω, 75 A, DPAK, IPAK, Short IPAK STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID STD75N3LLH6 30 V < 0.0055 Ω 75 A STU75N3LLH6 30 V < 0.0059 Ω 75 A STU75N3LLH6-S 30 V

STD150N3LLH6

Abstract: 150N3LLH6 STP150N3LLH6 stp150n3 TO-251 footprint STU150N3LLH6
Contextual Info: STD150N3LLH6 STP150N3LLH6, STU150N3LLH6 N-channel 30 V, 0.0024 Ω , 80 A, DPAK, IPAK, TO-220 STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID STD150N3LLH6 30 V 0.0028 Ω 80 A STP150N3LLH6 30 V 0.0033 Ω 80 A STu150N3LLH6 30 V 0.0033 Ω

Contextual Info: DSEP 30-03A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 300 V = 30 ns trr with soft recovery VRSM VRRM V V 300 300 Type A C TO-247 AD C DSEP 30-03A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 145°C; rectangular, d = 0.5

Contextual Info: DSEP 30-04A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 400 V = 30 ns trr with soft recovery VRSM VRRM V V 400 400 Type A C TO-247 AD C DSEP 30-04A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 140°C; rectangular, d = 0.5

60-03A

Contextual Info: DSEP 30-03A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 300 V trr = 30 ns with soft recovery VRSM VRRM V V 300 300 Type C A TO-247 AD C DSEP 30-03A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 135°C; rectangular, d = 0.5

Contextual Info: STL30P3LLH6 P-channel 30 V, 0.024 Ω typ., 30 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet − preliminary data Features Order code VDS RDS on max ID PTOT STL30P3LLH6 30 V 0.03 Ω 30 A 4W • RDS(on) * Qg industry benchmark

ixys dsi

Abstract: 30-08AC 30-12AC ir 2411
Contextual Info: DSI 30 Rectifier Diode ISOPLUS220TM VRRM = 800 - 1200 V IF AV M = 30 A Electrically Isolated Back Surface VRSM VRRM V V 900 1300 800 1200 Type ISOPLUS 220TM DSI 30-08AC DSI 30-12AC A C Preliminary Data Sheet C A Symbol IFRMS IFAV IFSM I2t Conditions Maximum Ratings

30-12No.3

Abstract: vuo 30 30-16NO3
Contextual Info: Three Phase Rectifier Bridges VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Type VUO 30 IdAV VRRM - ~~~ + = 37 A = 800 - 1800 V + VUO 30-08NO3 VUO 30-12NO3 VUO 30-14NO3 VUO 30-16NO3 VUO 30-18NO3* + ~~ ~ - - * delivery time on request Symbol

Contextual Info: Bulletin PD-20716 rev. D 01/07 MBR30.CT MBRB30.CT MBR30.CT-1 SCHOTTKY RECTIFIER 30 Amp IF AV = 30Amp VR = 30 - 45V Description/ Features Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform Values Units 30 A 30 A 35 - 45 V 1020

MBR3035CT

Abstract: MBR3035CT-1 MBR3045CT MBR3045CT-1 MBRB3035CT MBRB3045CT SMD-220
Contextual Info: Bulletin PD-20716 rev. D 01/07 MBR30.CT MBRB30.CT MBR30.CT-1 SCHOTTKY RECTIFIER 30 Amp IF AV = 30Amp VR = 30 - 45V Description/ Features Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform Values Units 30 A 30 A 35 - 45 V 1020