0-08A Search Results
0-08A Datasheets (19)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 008A | Essentra Components | TAPERED CAP - OD RANGE: 8.4 - 10 | Original | 4.78MB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NCE6008AS
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NCEPOWER | 60V, 8A NCE6008AS enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 13.5mΩ at VGS=10V and 18mΩ at VGS=4.5V, suitable for power switching and load switch applications in SOP-8 package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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JMTG3008A
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 40A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 8.6m ohm at VGS=10V, available in PDFN5x6-8L package, suitable for load switch, PWM, and power management applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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JMSL1008AC
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Jiangsu JieJie Microelectronics Co Ltd | 100V N-channel Power MOSFET with 6.5 mΩ typical RDS(ON) at VGS = 10V, 114A continuous drain current, available in TO-220-3L and TO-263-3L packages, suitable for power management and motor driving applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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JMSL1008AGQ
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Jiangsu JieJie Microelectronics Co Ltd | 100V N-Ch Power MOSFET in PDFN5x6-8L package with 6.0 mΩ typical RDS(ON) at VGS = 10V, 88A continuous drain current, low gate charge, and AEC-Q101 qualification for automotive applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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JMSL1008AE
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Jiangsu JieJie Microelectronics Co Ltd | 100V N-channel Power MOSFET with 6.5 mOhm typical RDS(on) at 10V VGS, 114A continuous drain current, low gate charge, and available in TO-220-3L and TO-263-3L packages. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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JMSH1008AE
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Jiangsu JieJie Microelectronics Co Ltd | 100V N-channel power MOSFET with 6.8 mΩ typical RDS(ON) at 10V VGS, 112A continuous drain current, available in TO-220-3L and TO-263-3L packages, suitable for power management and motor driving applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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JMSH1008AKQ
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Jiangsu JieJie Microelectronics Co Ltd | 100V N-Ch Power MOSFET in TO-252-3L package with 6.9 mΩ RDS(ON) at VGS = 10V, 92A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PBC-1008A-R28T
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JWD | Power Bead Inductor for server applications, featuring high current capacity over 125Apk, operating temperature from -40°C to 125°C, ultra low DCR, and RoHS compliance. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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JMSH1008AC
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Jiangsu JieJie Microelectronics Co Ltd | 100V N-channel power MOSFET with 6.8 mOhm typical RDS(ON) at 10V VGS, 112A continuous drain current, available in TO-220-3L and TO-263-3L packages, suitable for power management and motor driving applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AK6008AS
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AK Semiconductor | AK6008AS N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 8A continuous drain current, RDS(ON) less than 20mΩ at VGS=10V, and low gate charge for efficient switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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JMSL1008AP
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Jiangsu JieJie Microelectronics Co Ltd | 100V N-channel Power MOSFET in SOP-8L package with 7.4 mΩ RDS(ON) at VGS = 10V, 12A continuous drain current, low gate charge, and ultra-low on-resistance for power management and motor driving applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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JMTP3008A
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 15A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 8.7mΩ at VGS=10V and 12.5mΩ at VGS=4.5V, featuring SOP-8 package, advanced trench technology, low gate charge, and 100% UIS tested. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PBC-1008A-R22T
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JWD | Power Bead Inductor for server applications, featuring high current capacity over 125Apk, operating temperature from -40°C to 125°C, ultra low DCR, and RoHS compliance. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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JMSL1008AKQ
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Jiangsu JieJie Microelectronics Co Ltd | 100V N-channel Power MOSFET in TO-252-3L package with 6.7 mΩ typical RDS(ON) at 10V VGS, 98A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PBC-1008A-R15T
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JWD | Power Bead Inductor for server applications, featuring high current capacity over 125Apk, operating temperature from -40°C to 125°C, ultra low DCR, and RoHS compliance. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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JMSL1008AK
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Jiangsu JieJie Microelectronics Co Ltd | 100V N-channel Power MOSFET in TO-252-3L package with 6.7 mΩ RDS(ON) at VGS = 10V, 82A continuous drain current, low gate charge, and 1.7 Ω gate resistance, suitable for power management and motor driving applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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JMTQ3008A
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 30A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 8.6m ohm at VGS=10V, available in PDFN3x3-8L package, suitable for load switch, PWM, and power management applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PBC-1008A-R30T
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JWD | Power Bead Inductor PBC-1008A-RXXT series features single turn construction, ferrite core, ultra low DCR, high energy density, flat inductance over frequency, rated current up to 64A, operating temperature from -40°C to +125°C, and complies with AEC-Q200. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
0-08A Price and Stock
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Rochester Electronics LLC RQA0008AQS-H1TRANS |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RQA0008AQS-H1 | Bulk | 254,000 | 481 |
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Buy Now | |||||
Rochester Electronics LLC SIT8008AC-13-33E-23.304200EMEMS OSC XO 23.3042MHZ H/LVCMOS |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIT8008AC-13-33E-23.304200E | Bulk | 28,000 | 245 |
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Buy Now | |||||
Vishay Dale IHHP1008ABER2R2M01FIXED IND 2.2UH 2.3A 90 MOHM SMD |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IHHP1008ABER2R2M01 | Digi-Reel | 19,096 | 1 |
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Buy Now | |||||
| IHHP1008ABER2R2M01 | Cut Tape | 19,096 | 1 |
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Buy Now | ||||||
| IHHP1008ABER2R2M01 | Tape & Reel | 18,652 | 2,000 |
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Buy Now | ||||||
Maxim Integrated Products ADPL12008AFOB-T20V, 8A/10A FULLY INTEGRATED BUC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ADPL12008AFOB-T | Tape & Reel | 2,500 | 2,500 |
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Buy Now | |||||
| ADPL12008AFOB-T | Cut Tape | 2,500 | 1 |
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Buy Now | ||||||
| ADPL12008AFOB-T | Digi-Reel | 2,500 | 1 |
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Buy Now | ||||||
Renesas Electronics Corporation R1EX25008ASA00I-S0IC EEPROM 8KBIT SPI 5MHZ 8SOP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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R1EX25008ASA00I-S0 | Cut Tape | 2,452 | 1 |
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Buy Now | |||||
| R1EX25008ASA00I-S0 | Digi-Reel | 2,452 | 1 |
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Buy Now | ||||||