A 1887 TRANSISTOR Search Results

MAX1669EVKIT

Abstract: P1 TRANSISTOR serial Parallel-Printer Interface IC mmbt3904 motorola 2N3906 Central fdn359an fdn359an circuit 2N3906 CMPT3906 EMK107BJ104KA
Contextual Info: 19-1887; Rev 0; 12/00 MAX1669 Evaluation System The MAX1669 EV kit is an assembled and tested PC board that demonstrates the MAX1669 fan controller and temperature sensor. The MAX1669, in conjunction with external power components, controls the speed of a DC

SD1862

Abstract: SD1875 TCC20L15 TCC2100 SD1845 SD1876 20236
Contextual Info: s i MMiyitglTtiMOtgS ^ 7# SGS-THOMSON TELECOM AND DATA COMMUNICATIONS RF & MICROWAVE TRANSISTORS .230 2 L F L TO 215 AA .400 MAT FL 2 . 4 GHz microwave transistors for class A operation Package Typo SD P/N TC C 2100 TCC 20 L 08 TC C 20L15 TCC 20 L 25 SD 1850

TO-92variant

Contextual Info: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package Surface-mount SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) yes no no Page 1870 1871 1872 SOT89 no yes 1873 1874 SOT96-1 (S08) SOT137-1 (S024) S O U 86 (T0-220 exposed tabs)

j633

Abstract: Chemi-Con DATE CODES 465B A114 A115 AN1955 JESD22 MRF6S18140HR3 MRF6S18140HSR3 w1760
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18140HR3 MRF6S18140HSR3 Designed for N- CDMA base station applications with frequencies from 1805

microwave transistor siemens

Abstract: Siemens Microwave A 1887 transistor siemens p1
Contextual Info: SIEMENS HiRel Discrete and Microwave Semiconductors 5 Package Outlines HiRel 5.1 Package Outlines of Diode Packages SYMBOL B B1 D D1 d di F L MILLIMETRES MIN MAX 3.10 3.56 3.00 3.30 1.70 1 30 055 0.65 0.10 0.15 025 0.40 2.40 2.60 5.50 « Anode / D1 Cathode end

MRF8P9040N

Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
Contextual Info: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial

2SC1871

Abstract: n 1895 1878 TRANSISTOR 2SA893
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

power transistors table

Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
Contextual Info: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,

M 3329 B1

Abstract: tl 4311
Contextual Info: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S -T T-33-29 INC S0LITR0N DEVICES INC t l DE I 8 3 tflb 0 5 P ll€ l SEMICONDUCTOR; GROUP FAST SWITCHING 1 Q DGQIBM? 1 M~~ SDM 20311 SDM 20312 SDM 20313 SDM 20314 m rrK O B , i « m i t ! • \ 6 1 C 0 1 3 4 7 _ 0_ M

IRFF210

Abstract: IRFF211 IRFF212 IRFF213
Contextual Info: Standard Power MOSFETs- IRFF210, IRFF211, IRFF212, IRFF213 File N um b er N-Channel Enhancement-Mode Power Field-Effect Transistors 1.8A and 2.2A, 150V - 200V rosioni = 1.50 and 2.40 N-C H A N N EL EN HANCEM ENT MODE Features: •

BMA16X16

Contextual Info: SI GE C P L E S S E Y MARCH 1997 S E M I C O N D U C T O R S CLA80000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION ARRAY SIZES The CLA80k gate array series from GEC Plessey Semiconductors offers advantages in speed and density over previous array series. Improvements in design combined with

hp 4552

Abstract: O2-A2 CQFP100 PSOP24-MP0816 CLT84 gh 312 clt82xxx CQFP44 diode gp 421 PS-3306 Series
Contextual Info: CLA80000 Series High Density CMOS Gate Arrays DS3820 ISSUE 2.1 July 1997 INTRODUCTION ARRAY SIZES The CLA80k gate array series from Zarlink Semiconductor offers advantages in speed and density over previous array series. Improvements in design combined with advances in

CQFP44

Abstract: hp 4552 CLA80000 Series MQFP52 clt82xxx O2-A2 CQFP100 gh 312 PS-3306 Series cqfp120
Contextual Info: CLA80000 Series High Density CMOS Gate Arrays DS3820 ISSUE 2.1 July 1997 INTRODUCTION ARRAY SIZES The CLA80k gate array series from Zarlink Semiconductor offers advantages in speed and density over previous array series. Improvements in design combined with advances in

Contextual Info: Document Number: MW7IC2425N Rev. 0, 3/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications at 2450 MHz. Devices are suitable for use in industrial, medical and scientific

PowerMOS Transistors

Abstract: 075E05 MS-012AA SO24 SSOP16 SSOP24
Contextual Info: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) SOT89 SOT96-1 (SO8) SOT137-1 (SO24) SOT186 (TO-220 exposed tabs) SOT186A (TO-220) SOT223 SOT226 (low-profile TO-220)

Power Supply PS-613 uk

Abstract: CQFP44 GP141 DS3820 mux2*1 hp 4552 PSOP28-MP0818 cla85xxx PS-3306 Series Mitel Semiconductor process flow
Contextual Info: CLA80000 SERIES HIGH DENSITY CMOS GATE ARRAYS DS3820-2.1 July 1997 INTRODUCTION ARRAY SIZES The CLA80k gate array series from Mitel Semiconductor offers advantages in speed and density over previous array series. Improvements in design combined with advances in

P2QFP100-GH-1420

Abstract: O2-A2 CQFP44 USART 8251 interfacing with 8051 microcontroller CQFP100 microprocessors interface 8086 to 8251 full 18*16 barrel shifter design P4QFP100-GH-1420 CLA90000 transistors for oscillators
Contextual Info: CLA90000 Series High Density CMOS Gate Arrays DS5500 ISSUE 2.0 INTRODUCTION BENEFITS The CLA90000 family of gate arrays from Zarlink Semiconductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This

LT8900

Abstract: itt 2222a LT89000 2203a ses cree 3535 PS-303 AD clt850 LT8600 2168A LT8500
Contextual Info: Æ | M IT - L I f 1 w II CLA80000 SERIES I Km*Ink HIGH DENSITY CMOS GATE ARRAYS SEMICONDUCTOR DS3820-2.1 July 1997 INTRODUCTION ARRAY SIZES T he C L A 8 0 k gate array se rie s from M itel S e m ico n d u cto r offers advan ta ge s in spe ed and d e n sity over previous array

TL 1838

Abstract: ITT 2222 A Mitel Semiconductor process flow to design a full 18*16 barrel shifter design pic 1840 ATS 16Mhz MITEL CLA full 18*16 barrel shifter design
Contextual Info: CLA90000 SERIES j j j j ivilTEL HIGH DENSITY CMOS GATE ARRAYS s b m Sc o n â î c t o r DS4375 - 2.0 April 1997 INTRODUCTION BENEFITS The CLA90000 family of gate arrays from Mitel Sem icon­ ductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This

microprocessors interface 8086 to 8251

Abstract: USART 8251 interfacing with 8051 microcontroller to design a full 18*16 barrel shifter design USART 8251 18*16 barrel shifter design microprocessors architecture of 8251 USART 8251 expanded block diagram cqfp100 P2QFP100-GH-1420 full 18*16 barrel shifter design
Contextual Info: CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS DS4375 - 2.0 April 1997 INTRODUCTION BENEFITS The CLA90000 family of gate arrays from Mitel Semiconductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This

ITT 2222 A

Abstract: itt 2222
Contextual Info: Si GEC P L E S S E Y APRIL 1997 S E M I C O N D U C T O R S CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 family of gate arrays from GEC Plessey Semiconductors GPS consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million

TQFP-80

Abstract: AT83C51SND1C AT89C5131 T85C5121 JESD22-A101 JESD22-A110 Q100 TQFP80 TS16949 atmel 442
Contextual Info: AT83C51SND1C QualPack Qualification Package AT83C51SND1C C51 Microcontroller MP3 Decoder AT83C51SND1C September 2003 Rev. 0 – 2003 September 1 AT83C51SND1C QualPack 1 Table of contents 1 TABLE OF CONTENTS .2

P2QFP100-GH-1420

Abstract: IR 1838 3v with 3 pins
Contextual Info: S i GEC P L E S S E Y s i; M i c o n i i c; r o DECEMBER 1996 r s DS4375-2.0 CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 family of gate arrays from GEC Plessey Semiconductors GPS) consists of 14 fixed-size arrays with

USART 8251 interfacing with 8051 microcontroller

Abstract: full 18*16 barrel shifter design 18*16 barrel shifter design USART 8251 USART 8251 expanded block diagram 8251 UNIVERSAL SYNCHRONOUS ASYNCHRONOUS RECEIVER P4QFP100-GH-1420 interfacing 8051 with ppi USART 8251 interfacing M8490 scsi
Contextual Info: CLA90000 Series High Density CMOS Gate Arrays DS5500 ISSUE 2.0 INTRODUCTZarlinkION BENEFITS The CLA90000 family of gate arrays from Zarlink Semiconductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This