ZIP40 Search Results

zip40

Contextual Info: ZIP40-P-475-1.27 Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ (≥5µm) 3.46 TYP. 3 版/96.12.5

zip40

Abstract: 47512
Contextual Info: ZIP40-P-475-1.27 Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.

Contextual Info: ZIP40-P-475-1.27 Mirror finish 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 3.46 TYP. 3/Dec. 5, 1996

Contextual Info: T O S H IB A UNDER DEVELOPMENT TMP90CH45 CMOS 8-BIT MICRO CONTROLLERS TMP90CH45N/TMP90CH45F 1. OUTLINE AND CHARACTERISTICS TMP90CH45 is a high speed, high performance 8-bit microcontroller developed for application in the control of various devices. TMP90CH45, CMOS 8-bit microcontroller, integrates an 8-bit CPU, RAM, A/D

transistor sl 431

Abstract: ZIP40-P-475
Contextual Info: O K I Sem iconductor M S M 5 1 4 1 9 0 / S L _ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate theMSM51419 0 /SL is OKI's CMOS silicon gate process technology.

Contextual Info: TOSHIBA TM P90C840A/841A CMOS 8-BIT MICROCONTROLLERS TMP90C840AN/TMP90C841AN TM P90C840AF/TM P90C841AF 1. OUTLINE AND CHARACTERISTICS The TMP90C840A is a high-speed advanced 8-bit micro controller applicable to a variety of equipment. With its 8-bit CPU, ROM, RAM, A/D converter, multi-function timer/event counter

TMP90C844

Contextual Info: TOS H IB A UC/UP SME D • liDc1724S OOSlOflG 41T ■ T0S3 “T - H TOSHIBA UNDER DEVELOPMENT TMP90C844 CMOS 8-BIT MICROCONTROLLERS TMP90C844N/TMP90C844F 1. OUTLINE AND CHARACTERISTIC TMP90C844 is a high speed, high performance 8-bit microcontroller developed for

GG41

Contextual Info: April 1993 Edition 2.1 FUJITSU DATA S H E E T M B 8 1 8 2 5 1 -70/-80 2097,152 Bits 262,144 x 8 Bits Multi-port CMOS Dynamic RAM The Fujitsu MB818251 is a fully decoded dual port CMOS Dynamic RAM (DRAM) organized as 262,144 words by 8 bits dynamic RAM port and 512 words by 8 bits serial

7006C

Abstract: TOA8
Contextual Info: '- / Ú - FUJITSU S3E L TD 3 7 4 cl75b G D 0 3 3 S S D .2 3 ^ /7 TOb » F C A J June 1992 Edition 1.0 FUJITSU DATA SHEET M B 8 1 4 2 6 0 A -70/-80/-10 CMOS 256K X 16 BIT FAST PAGE MODE DYNAMIC RAM CMOS 262,144 x 16 bit Fast Page Mode Dynamic RAM The Fujitsu MB814260A is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304

MB81417

Abstract: marking 10-16
Contextual Info: FEB i 6 1993 August 1992 Edition 2.0A fu J it su — DATASHEET MB814170A-70/-80/-10 CMOS 256K x 16 Bits Fast Page Mode Dynamic RAM The Fujitsu M B 814170A is a fully decoded C M O S Dynamic RAM D R A M that contains 4 ,1 9 4 ,3 0 4 memory cells accessible in 16- or 8-bit increments. The M B 814 1 70A features a

SMD MARKING CODE 071 A01

Abstract: smd code 38P LGA 1155 PIN diagram MARKING CODE SMD IC A08 L QUAD Aluminum nitride smd marking m05 LGA 1155 Socket PIN diagram pitch 0.4 QFP 256p marking code smd fujitsu Texas Instruments epoxy Sumitomo
Contextual Info: To Top Contents Safety Precautions 1 Introduction to Packages 1.1 Overview 1.2 Package Lineup 1.3 Package Forms 1.4 Package Structures 1.5 How Package Dimensions Are Indicated 1.6 Package Codes 1.7 Marking 1.8 Future Trends in Packages 2 Package Mounting Methods

Contextual Info: E2L0015-17-Y1 ¡ Semiconductor MSM518122 ¡ Semiconductor This version:MSM518122 Jan. 1998 Previous version: Dec. 1996 131,072-Word ¥ 8-Bit Multiport DRAM DESCRIPTION The MSM518122 is an 1-Mbit CMOS multiport DRAM composed of a 131,072-word by 8-bit dynamic RAM and a 256-word by 8-bit SAM. Its RAM and SAM operate independently and

LGA 1156 PIN OUT diagram

Abstract: QSJ-44403 LGA 1150 Socket PIN diagram LGA 1155 Socket PIN diagram IC107-26035-20-G LGA 1151 PIN diagram REFLOW lga socket 1155 IC107-3204-G TB 2929 H alternative LGA 1155 pin diagram
Contextual Info: DIP8-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 0.46 TYP. 2/Dec. 11, 1996 DIP14-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight (g)

MSM518121A

Contextual Info: ¡ Semiconductor ¡ Semiconductor MSM518121A This version: Jan. 1998 MSM518121A Previous version: Dec. 1996 131,072-Word ¥ 8-Bit Multiport DRAM DESCRIPTION The MSM518121A is an 1-Mbit CMOS multiport memory composed of a 131,072-words by 8-bit dynamic random access memory, RAM port, and a 256-word by 8-bit static serial access memory,

MSM518122

Contextual Info: ¡ Semiconductor MSM518122 ¡ Semiconductor This version:MSM518122 Jan. 1998 Previous version: Dec. 1996 131,072-Word ¥ 8-Bit Multiport DRAM @–Ú˘ ˘†Ò The MSM518122 is an 1-Mbit CMOS multiport DRAM composed of a 131,072-word by 8-bit dynamic RAM and a 256-word by 8-bit SAM. Its RAM and SAM operate independently and

msm518121

Abstract: si08
Contextual Info: O K I Semiconductor MSM518121A 131,072-Word x 8-Bit Multiport DRAM DESCRIPTION The MSM518121A is an 1-Mbit CMOS multiport memory composed of a 131,072-words by 8-bit dynamicrandom access memory, RAM port, and a 256-word by 8-bitstatic serial access memory,

Contextual Info: O K I Semiconductor MSM5 1 4 1 90/SL_ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate theMSM514190/SL is OKI's CMOS silicon gate process technology.

MSM518122

Abstract: SI05 ZIP40-P-475-1 si08
Contextual Info: O K I Semiconductor M SM 518122 131,072-W ord x 8 -B it M ultiport DRAM DESCRIPTION The MSM518122 is an 1-Mbit CMOS multiport DRAM composed of a 131,072-word by 8-bit dynamic RAM and a 256-word by 8-bit SAM. Its RAM and SAM operate independently and asynchronously.

MB818251

Abstract: MB818251-70 UA729
Contextual Info: April 1993 Edition 2.1 FUJITSU DATA SH EET M B 8 1 8 2 5 1 -70/-80 2097,152 Bits 262,144x8 Bits Multi-port CMOS Dynamic RAM The Fujitsu MB818251 is a fully decoded dual port CMOS Dynamic RAM (DRAM) organized as 262,144 words by 8 bits dynamic RAM port and 512 words by 8 bits serial

Contextual Info: August 1993 Edition 1.0 FUJITSU DATA SHEET M B 8 18253-70/-80 2097,152 Bits 262,144 x 8 Bits Multi-port CMOS Dynamic RAM The Fujitsu MB818253 is a fully decoded dual port C MOS D ynam ic RAM P R A M ) 256K words by 8 bits random access parallel port and 512 words by 8 bits S tatic RAM (SRAM)

Contextual Info: August 1993 Edition 1.0 FUJITSU DATA SHEET : M B 8 18 25 5- 70 /- 80 2097,152 Bits 2 6 2 ,1 4 4 x 8 Bits Multi-port CMOS Dynamic RAM The Fujitsu M B 818255 is a fully decoded dual port C MOS D ynam ic RAM (DRAM) 256K words by 8 bits random access parallel port ana 512 w ords by 8 bits Static RAM (SRAM)

425M

Abstract: DIP18 DIP20 DIP28 DIP32 DIP40 SOJ28-P-400-1 PGA wire bonding IPGA400-C-S33U-1 PGA240
Contextual Info: 2. 外形寸法図 2. 外形寸法図 2 2-1. パッケージ外形寸法 - 2 2-1-1. パッケージ寸法表示記号 - 2 2-1-2. リード位置許容値について - 3

SC3843

Abstract: SC257
Contextual Info: J2L0011-17-Y1 作成：1998年 MSM54C8651月 ● 前回作成：1997年 9月 ¡ 電子デバイス MSM54C865 65,536-Wordx8-Bit MULTIPORT DRAM n 概要

Contextual Info: O K I Semiconductor MSM514170A/ASL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514170A/ASL is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514170A/ASLachieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514170A/ASL is