XGSQ7535 Search Results

Contextual Info: XGSQ7535 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)400 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

B-100

Abstract: TWX910-950-19 TWX910-950-1942 XGS7002 XGSQ7530 XGSQ7535 XGSQ7540
Contextual Info: SÖUARE D C O/ GENERAL 3918590 GENERAL D • 0525506 G002211 S E M IC O N D U C TO R 95D 7 02211 CR, . General ^ ^S em ico n d u cto r ' ^ Industries, Inc. XGSQ7530 XGSQ7535 XGSQ7540 7 "- NPN SWITCHING POWER TRANSISTORS NPN This unique series utilizes General Semiconductor Industries' C JR® process which

BDY96

Abstract: DTS519 60M6 2n2114 IR519
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Max hFE fT •CBO Max t0N Max Of) ON) Min (HZ) (A) (8) PD r (CE)sat Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) 5 10 15 20 25 30 35 40

Contextual Info: r le = 10 AMPS DEVICE TYPE VOLTS PD @ 100°C WATTS hFE@ lc Min. Max. AMPS PACKAGE 2N2811 2N2812 2N2813 2N2814 TO-61 TO-61 TO-61 TO-61 80 80 120 120 8.0 8.0 8.0 8.0 40.0 40.0 40.0 40.0 2040 20 40 - 60 120 60 120 2N4070 2N4071 2N4301 2N5218 2N5288 2N5289 100

2N2611

Abstract: 2N8674 2N5675 2N2812 2N2813 2N4070 2N4071 2N4301 2N5218 2N5313
Contextual Info: SûUARE î> C O / GENERAL “ ^ 3 9 1 8 5 9 0 G EN E R A L SE M IC O N D U C T O R _ ' $ ÖS2SS0Ö 95D 02094 D T -J 3 -// le = 10 A M P S / ‘ BVceo PACKAGE VOLTS «CEV VOLTS b v eb0 2N2611 TO-61 60 2N2812 TO-61 60 2N2813

SKC10C70

Abstract: SKC10A75 BUX8 2SC2650 SKC10A70 2SC330 SGSIF441
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 >= 30 1814-3502 1814-3505 SPT4624 2SC1468 2N6251 STIPl755 TIPl755 TIPl755 ~~~~g~01 35 40 1814-3702 1814-3705 BUT12 (A) BUn2 (A) BUn2 (A) SKC10A70 SKC10A75 SKC10C70 S~~~~3~~ 45 50 BUX80 SMl13303 2SC1469