X2816BMB Search Results

X2816BMB

Abstract: X2816BM X2816B
Contextual Info: Xiar. D ATA S H EET S U P PLEM EN T 16K Mil-Std-883C X2816BMB 2 04 8 x8 Bit Electrically Erasable PROM With the exception of V q e . all device A.C. and D.C. pa­ rameters are the same as those for normal operation. A.C. AND D.C. REQUIREMENTS FOR CHIP ERASE

0G015

Abstract: X2816BMB
Contextual Info: XICOR INC TS 99 41 74 3 X I C O R 1^1^41743 0G015D0 □ 95D INC T - ¥4 -/3 -27 DATA SHEET SUPPLEMENT Mil-Std-883C 16K 01500 D W i 2048 x 8 Bit X2816BMB Electrically Erasable PROM With the exception of Voe . a11device A.C. and D.C. pa­ rameters are the same as those for normal operation.

TMS27256

Abstract: M27512FI TC571000D-15 et2732 TC571001D-15 4827128 27c1001a Toshiba TC571000D-20 28C256 27c32
Contextual Info: Device List by Manufacturer . 2716 2716BDC 2732 2732A 2764 Am27C64 Am2864AE Am2864BE 27128 Am27C128 27256 Am27C256 Am27H256 Am27C512 Am27C512L Am27C010 Am27H010 Am27LV010 Am27LV010B Am27C020 Am27LV020 Am27LV020B Am27C040 Am27C080 AT28C04 AT28C16 AT28C17 AT28HC16 AT28HC16L AT27HC64

X2816B

Abstract: X2816BM X2816BMB WE VQE 11 E X2816BM-25
Contextual Info: JÜHK PR ELIM IN A R Y IN FO R M A TIO N 16K Military X2816BM 2 0 4 8 x 8 Bit Electrically Erasable PROM FEATURES • 250 ns Access Time • High Performance Advanced NMOS Technology • Fast Write Cycle Times — 16-Byte Page Write Operation — Byte or Page Write Cycle: 5 ms Typical

Contextual Info: Usar PRELIMINARY INFORMATION 16K Military X2816BM 2048 x 8 Bit Electrically Erasable PROM FEATURES • 250 ns Access Time • High Performance Advanced NMOS Technology • Fast Write Cycle Times — 16-Byte Page Write Operation — Byte or Page Write Cycle: 5 ms Typical