UPF14060 Search Results

UPF14060 Datasheets (5)

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Cree

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
UPF14060		Cree	LDMOS FETs in Class AB Operation Linear 1.4 GHz	Original	PDF	183.14KB	5
UPF14060F		Cree	60W, 1.4GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS	Original	PDF	50.62KB	4
UPF14060F		Cree	FET Transistor, 60W, 1.4GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	183.13KB	5
UPF14060P		Cree	60W, 1.4GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS	Original	PDF	50.62KB	4
UPF14060P		Cree	FET Transistor, 60W, 1.4GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	183.13KB	5

UPF14060 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
cree rf Abstract: UPF14060 UPF14060F UPF14060P Contextual Info: UPF14060 60W, 1.4 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications at 1400 MHz. Rated with a minimum output power of 60W, it is ideal for 16 QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in	Original	upf14060 upf14060f cree rf upf14060p	PDF
Contextual Info: UPF14060 60W, 1.66 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications at 1400 MHz. Rated with a minimum output power of 60W, it is ideal for 16 QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in	Original	upf14060 upf14060f 540ma	PDF
ultrarf Abstract: UPF14060 UPF14060F UPF14060P Contextual Info: UPF14060 60W, 1.4GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications at 1400MHz. Rated with a minimum output power of 60W, it is ideal for 16QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in Class A or AB	Original	upf14060 1400mhz 16qam upf14060f +2ultrarf upf14060p	PDF
semiconductors cross reference Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b Contextual Info: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30	Original	blf1043 upf1010 blf3g21-30 upf1030 +14ugf09030 blf1046 ugf09045 ugf09060 blf4g10-120 semiconductors cross reference ugf18030 cw 180 ugf16085 upf14060 transistors cross reference list blc5g22-100 ugf25025 blf4g20-110b	PDF