UPC2748T Search Results

UPC2748T

Abstract: UPC2748T-E3
Contextual Info: 3 V, 900 MHz LOW NOISE SI MMIC AMPLIFIER UPC2748T NOISE FIGURE AND GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 6mA FEATURES • 2.8 dB NOISE FIGURE 4.0 20 • LOW VOLTAGE - LOW CURRENT: 6 mA at 3 V GS • TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC2748T is a Silicon Monolithic integrated circuit which

Contextual Info: 3 V, 900 MHz LOW NOISE SI MMIC AMPLIFIER UPC2748T NOISE FIGURE AND GAIN vs. FREQUENCY Vcc = 3.0 V, Icc = 6mA FEATURES 2.8 dB NOISE FIG URE LOW VO LTA G E - LOW CU RREN T: 6 mA at 3 V GS LOW PO W ER CO NSU M PTIO N: 18 mW TYP SUPER SM A LL PACKAG E 3.5 TAPE AN D REEL PAC KAG ING OPTIO N AVA ILAB LE

NF 817

Abstract: UPC2748T UPC2748T-E3
Contextual Info: 3 V, 900 MHz LOW NOISE SI MMIC AMPLIFIER UPC2748T NOISE FIGURE AND GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 6mA FEATURES • 2.8 dB NOISE FIGURE 4.0 20 • LOW VOLTAGE - LOW CURRENT: 6 mA at 3 V GS • TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC2748T is a Silicon Monolithic integrated circuit which

nec marking power amplifier upc

Abstract: uPC 2002 marking C1s marking 13 so-6
Contextual Info: 3 V, SUPER MINIMOLD 900 MHz Si MMIC AMPLIFIER UPC2747TB UPC2748TB FEATURES GAIN vs. FREQUENCY • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or S O T -3 63 package • GAIN: UPC 2747TB : Gs = 12 dB TYP UPC 2748TB : Gs = 19 dB TYP • NOISE FIGURE:

Contextual Info: 3 V, 900 MHz LOW NOISE SI MMIC AMPLIFIER UPC2748T NOISE FIGURE AND GAIN vs. FREQUENCY Vcc = 3.0 V, Icc = 6mA FEATURES 2.8 dB NOISE FIGURE LOW VOLTAGE - LOW CURRENT: 6 mA at 3 V Gs LOW POWER CONSUMPTION: 18 mW TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE

Contextual Info: _DATA SHEET_ IV I F f / BIPOLAR ANALOG INTEGRATED CIRCUITS / UPC2747TB, uPC2748TB 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUMICATIONS DESCRIPTION The ^¡PC2747TB, ^¡PC2748TB are silicon monolithic integrated circuits designed as amplifier for mobile

UPC2748T

Abstract: UPC2748T-E3 2C1T
Contextual Info: 3 V, 900 MHz LOW NOISE SI MMIC AMPLIFIER UPC2748T NOISE FIGURE AND GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 6mA FEATURES • 2.8 dB NOISE FIGURE 4.0 20 • LOW VOLTAGE - LOW CURRENT: 6 mA at 3 V GS • TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC2748T is a Silicon Monolithic integrated circuit which

UPC2747TB-E3-A

Abstract: marking C1s UPC2747TB UPC2748TB UPC2748TB-E3-A marking 579 sot363 nec marking power amplifier upc 2748TB
Contextual Info: 3 V, SUPER MINIMOLD UPC2747TB 900 MHz Si MMIC AMPLIFIER UPC2748TB FEATURES GAIN vs. FREQUENCY VCC = 3.0 V • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package 20 • GAIN: UPC2747TB: Gs = 12 dB TYP UPC2748TB: Gs = 19 dB TYP UPC2747TB

Contextual Info: 3 V, 900 MHz LOW NOISE SI MMIC AMPLIFIER FEATURES UPC2748T NOISE FIGURE AND GAIN vs. FREQUENCY 2.8 dB NOISE FIGURE LOW VOLTAGE - LOW CURRENT: 6 mA at 3 V LOW POWER CONSUMPTION: 18 mW TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE a -o 2 01

upc 575 c2

Abstract: top marking 6701 CA 4016 PIN DIAGRAM 7371 802 upc 1006
Contextual Info: 3 V, SUPER MINIMOLD UPC2747TB 900 MHz Si MMIC AMPLIFIER UPC2748TB FEATURES GAIN vs. FREQUENCY VCC = 3.0 V • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package 20 • GAIN: UPC2747TB: Gs = 12 dB TYP UPC2748TB: Gs = 19 dB TYP UPC2747TB

817 CN

Contextual Info: 3 V, 900 MHz LOW NOISE SI MMIC AMPLIFIER UPC2748T NOISE FIGURE AND GAIN vs. FREQUENCY Vcc = 3.0 V, Icc = 6mA FEATURES 2.8 dB NOISE FIGURE LOW VOLTAGE - LOW CURRENT: 6 mA at 3 V LOW POWER CONSUMPTION: 18 mW TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE

mobile phone basic block diagram

Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

transistor t06

Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

SMD M05 sot23

Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
Contextual Info: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly

ne3511s02 s2p

Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
Contextual Info: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan

2747T

Abstract: 2748T MARKING su 6-PIN PC2746T marking C1R NEC
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS jUPC2746T, 2747T, 2748T 3V BIAS SILICON MMIC AMPLIFIERS FOR 900 MHz BAND MOBILE TELEPHONE FEATURES • Low voltage operation - Single supply voltage 3.0 V TYP. m inim um operating voltage 1.8 V • W ide Band Operation - ¿IPC2746T: Gp = 19 dB typ., fu = 1.5 G H z//iPC 2747T: Gp = 12 dB typ., fu = 1.8 G H z

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17

mmic a08

Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18

SOT-26

Abstract: t06 sot 23 SOT26 upc2713t UPC1678G
Contextual Info: Wideband Amplifiers 'V - v î tigmr- U14mb ï* ' < *ttm • TTTV. - Vec V MIN | NF (dB) Icc (mA) TYP M A X TYP Gain (dB) MIN TYP M AX R L out (dB) (dB) TYP TYP PldB (dBm) TYP ISO L (dB) TYP «<* «04» ¿¡SSL 4 •1 * J ! '. UPC1675G 1900 5 12 17 22 5.5