UPC1663G Search Results

PC1663C

Contextual Info: ULTRA-WIDEBAND DIFFERENTIAL VIDEO AMPLIFIER FEATURES • BANDWIDTH AND 120 MHz at A v o l 170 MHz at A v o l 700 MHz at A v o l = UPC1663C UPC1663G SINGLE ENDED VOLTAGE GAIN vs. FREQUENCY TYPICAL GAIN 300 100 10 • VERY SMALL PHASE DELAY Qain v. • GAIN ADJUSTABLE FROM 10 TO 300

UPC1663GV-E1

Abstract: UPC1663G UPC1663G-E1 UPC1663GV upc16 upc1663
Contextual Info: ULTRA-WIDEBAND UPC1663G DIFFERENTIAL VIDEO AMPLIFIER UPC1663GV FEATURES SINGLE ENDED VOLTAGE GAIN vs. FREQUENCY Single Ended Voltage Gain, AVS dB • BANDWIDTH AND TYPICAL GAIN 120 MHz at AVOL = 300 170 MHz at AVOL = 100 700 MHz at AVOL = 10 • VERY SMALL PHASE DELAY

Contextual Info: ULTRA-WIDEBAND DIFFERENTIAL VIDEO AMPLIFIER FEATURES_ UPC1663G UPC1663GV SINGLE ENDED VOLTAGE GAIN vs. FREQUENCY • BANDWIDTH AND TYPICAL GAIN 120 MHz at A v o l = 300 170 MHz at A v o l = 100 700 MHz at A v o l = 10 • VERY SMALL PHASE DELAY

NDL2102

Abstract: 1663C
Contextual Info: UPC1663C UPC1663G ULTRA-WIDEBAND DIFFERENTIAL VIDEO AMPLIFIER FEATURES SINGLE ENDED VOLTAGE GAIN BANDWIDTH AND TYPICAL GAIN 120 M Hz at A v o l = 300 170 M Hz at A v o l = 100 700 M Hz at A v o l = 10 CO SCO 60 < c 50 GAIN ADJUSTABLE FROM 10 TO 300 o> NO FREQUENCY COMPENSATION REQUIRED

UPC1663GV

Abstract: UPC1663GV-E1
Contextual Info: ULTRA-WIDEBAND UPC1663GV DIFFERENTIAL VIDEO AMPLIFIER FEATURES SINGLE ENDED VOLTAGE GAIN vs. FREQUENCY Single Ended Voltage Gain, AVS dB • BANDWIDTH AND TYPICAL GAIN: 120 MHz at AVOL = 300 170 MHz at AVOL = 100 700 MHz at AVOL = 10 • VERY SMALL PHASE DELAY

UPC1663C

Contextual Info: ULTRA-WID EBAN D DIFFERENTIAL VIDEO AMPLIFIER FEATURES_ • BANDWIDTH AND 120 MHz at A v o l = 170 MHz at A v o l = 700 MHz at A v o l = UPC1663C UPC1663G SINGLE ENDED VOLTAGE GAIN vs. FREQUENCY TYPICAL GAIN 300 100 10 • VERY SMALL PHASE DELAY

UPC1663GV-E1-A

Abstract: UPC1663GV
Contextual Info: DC to VHF UPC1663GV DIFFERENTIAL VIDEO AMPLIFIER FEATURES BANDWIDTH AND TYPICAL GAIN: 120 MHz at AVOL = 300 170 MHz at AVOL = 100 700 MHz at AVOL = 10 • VERY SMALL PHASE DELAY • GAIN ADJUSTABLE FROM 10 TO 300 • NO FREQUENCY COMPENSATION REQUIRED DESCRIPTION

UPC1663G

Abstract: UPC1663G-E1
Contextual Info: ULTRA-WIDEBAND UPC1663G DIFFERENTIAL VIDEO AMPLIFIER FEATURES SINGLE ENDED VOLTAGE GAIN vs. FREQUENCY Single Ended Voltage Gain, AVS dB • BANDWIDTH AND TYPICAL GAIN 120 MHz at AVOL = 300 170 MHz at AVOL = 100 700 MHz at AVOL = 10 • VERY SMALL PHASE DELAY

UPC1663GV

Abstract: UPC1663GV-E1-A 10 gb laser diode microwave detector diode RA-1000
Contextual Info: ULTRA-WIDEBAND UPC1663GV DIFFERENTIAL VIDEO AMPLIFIER FEATURES SINGLE ENDED VOLTAGE GAIN vs. FREQUENCY Single Ended Voltage Gain, AVS dB • BANDWIDTH AND TYPICAL GAIN: 120 MHz at AVOL = 300 170 MHz at AVOL = 100 700 MHz at AVOL = 10 • VERY SMALL PHASE DELAY

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

transistor t06

Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX

ne3511s02 s2p

Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
Contextual Info: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,

mmic a08

Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18

Contextual Info: Video Amplifiers ELECTRICAL CHARACTERISTICS Ta s. 2 5 t! Vcc (V) VMM AVd17 tí*.? tpd4? Vchcmï5 V o p p (MHz) (ns) (ns) (V) (Vp-p) Gain 1 Gain 2 Gain 1 Gain 2 Gain 1 Gain 2 Sain 1 Gain 2 Icc (mA) ISINK6 <mA) Demand Pari Number TYP TYP TYP TYP TYP TYP TYP

UPB1509

Abstract: uPB1507 UPC1678GV 2721 G138 UPB1506GV 1506 1686 S087 UPB1507GV
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. S08 7 8 6 5 Detail of Lead End N 1 2 3 3.0 MAX +7˚ 4 3 -3˚ 4.94 ± 0.2 +0.10 0.15 -0.05 1.5±0.1 0.87±0.2 3.2±0.1 1.8 MAX 0.1 ± 0.1

26 sot-363 rf power amplifier

Abstract: UPC3232TB upc8211 UPC3223TB QFN2020 uPC2710 s06 A UPC1678GV UPC2745TB UPC2747TB
Contextual Info: NEC Silicon RFIC Amplifiers – Low Power, Wideband & SiGe/SiGeC Low Power Amplifiers Part Number Typical ELECTRICAL CHARACTERISTICS1 TA = 25°C Frequency Range VCC ICC NF Gain RLIN RLOUT P1dB ISOL @ 3dB (V) (mA) (dB) (dB) (dB) (dB) (dBm) (dB) down Package

SMD transistor M05

Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
Contextual Info: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE

mc10087f1

Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
Contextual Info: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.

t06 sot 23

Abstract: UPC2710 upc2713
Contextual Info: RF 1C Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL CHARACTERISTICS’ f t * • 25“C Typical Fraquancy Hangs Vcc 93H B V) Pan Numbar MIN 9m NF (dB) Icc <mA) TYP MAX Gain RLin RLout PldB ISOL (dB) (dB) (dB) (dBm) (dB) TYP TYP TYP TYP TYP MIN TYP MAX Pfeg.

SMD M05 sot

Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
Contextual Info: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial