830CE
Abstract: UN1121 UN1122 UN1123 UN1124 UN112X UN112Y
Contextual Info: Transistors with built-in Resistor UN1121/1122/1123/1124/112X/112Y Silicon PNP epitaxial planer transistor For digital circuits Unit: mm • Features 2.5±0.1 1.5 1.0 1.0 0.4 1.5 R0.9 ● ● ● ● ● UN1121 UN1122 UN1123 UN1124 UN112X UN112Y R1 2.2kΩ
|
Original
|
un1121/1122/1123/1124/112x/112yun1121un1122un1123+4un1124un112xun112y830ce
|
PDF
|
UN1122
Abstract: UN1222 UNR1122 UNR1222 XN04322 XN4322
Contextual Info: Composite Transistors XN04322 XN4322 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) ● 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
|
Original
|
xn04322xn4322unr1222un1222+2unr1122un1122
|
PDF
|
UN1122
Abstract: UN1222 UNR1122 UNR1222 XN04322 XN4322
Contextual Info: Composite Transistors XN04322 XN4322 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2)
|
Original
|
xn04322xn4322unr1222un1222+2unr1122un1122
|
PDF
|
UN1222
Abstract: UN1122 XN4322 tr231
Contextual Info: Composite Transistors XN4322 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 (Ta=25˚C) Symbol Ratings Unit VCBO 50 V Collector to emitter voltage VCEO
|
Original
|
xn4322un1222un1122tr11000+1tr231
|
PDF
|
transistor a2160
Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124
|
OCR Scan
|
n12861n13801mn1381n13811+15n13821n15040215p0802n150412mn15151mn152121transistor a2160transistor a1270a1270 transistortransistor 2sd 45151431t transistortransistor a769mini circuits 15542a1270 yan 5606k
|
PDF
|
3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
|
OCR Scan
|
1020gn12861n12b62mn1381+16mn13811mn1382115p080215p540258851a70803a3866stransistor a999bs 7818 -1995transistor tt 2206a999 transistortt 2206 transistora1535a8340uastransistor 3866s2sd 4515
|
PDF
|
UN1122
Abstract: UN1213 UNR1122 UNR1213 XN04381 XN4381
Contextual Info: Composite Transistors XN04381 XN4381 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) ● 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
|
Original
|
xn04381xn4381unr1213un1213+2unr1122un1122
|
PDF
|
UN1122
Abstract: UN1213 XN4381
Contextual Info: Composite Transistors XN4381 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Ratings Unit VCBO 50 V Collector to emitter voltage VCEO 50 V
|
Original
|
xn4381un1122un1213 |
PDF
|
UN7000
Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
Contextual Info: Pakage No. Rb Ik Q ) Rst <kO) New S Type(D34) S-Mini Type(D5) M Type{D35) Mini Type(D12) (Pc =400m W , 600mW M 1W '2) (Pc = 200mW) (Pc=300m W ) (Pc — 150mW) PNP PNP NPN PNP MT1 Type(D37) (Pc =400m W , 600mW*1 ) Mini-Power MT2 Type(D38) (P c= 1W ) (Pc=125m W )
|
OCR Scan
|
un1000600mwun2000200mw+13n2111un2112un2113un2114un2115un2116un7000un8000un9110unr921cjun1219un4115un1211
|
PDF
|
UN1219
Abstract: 12Z2 UN1110 UN1111 UN1113 UN1115 UN921E UN921F UN921K UN921L
Contextual Info: - 340 - T a = 2 5 t ,*EP[äTc=25T; m s ft £ VcBO VcEO lc(DC) (V) (V) (A) Pc Pei CW) m 5 ICBO (max) ( UA) S (min) W ^ (max) tt Vc e (V) (Ta=25°C) Ic / I e (A) [*£P(ätypffi] (max) (V) (V) le (A) Ib (A) UN921E föT Digital 50 50 0. 1 0.125 0 .1 50 60 10
|
OCR Scan
|
un921eun921fun921kun921l+10un1110un1111un121310k/47kuni114un1214un121912z2un1113un1115
|
PDF
|
AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
|
OCR Scan
|
mn101c01cmn101c01dmn101c025mn1020003+16mn1020004amn1020004afbmn1020012amn102012afamn1020015an3962fbmn1880023mn19412mn1874033ic an7135an3814kmn1883214an8294nsbmn4117405mn171202
|
PDF
|
UN1122
Abstract: UN1213 UNR1122 UNR1213 XN04381 XN4381
Contextual Info: Composite Transistors XN04381 XN4381 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Parameter Unit 50 V Collector to emitter voltage VCEO
|
Original
|
xn04381xn4381un1122un1213+2unr1122unr1213
|
PDF
|
