UN1116 Search Results

UN1116

Abstract: UNR1116 XP04116 XP4116
Contextual Info: Composite Transistors XP04116 XP4116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1116(UN1116) x 2 elements • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage

UN1116

Abstract: UNR1116 XP01116 XP1116
Contextual Info: Composite Transistors XP01116 XP1116 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1116(UN1116 )x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element

UN1116

Abstract: XP4116
Contextual Info: Composite Transistors XP4116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UN1116 x 2 elements • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage

UN1116

Abstract: XP1116
Contextual Info: Composite Transistors XP1116 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UN1116 x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02

UN1116

Abstract: XN1116
Contextual Info: Composite Transistors XN1116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1116 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element

UN1116

Abstract: UN1216 XP4316
Contextual Info: Composite Transistors XP4316 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 ● UN1216+UN1116 • Absolute Maximum Ratings Parameter (Ta=25˚C) Ratings Unit Collector to base voltage

UN1116

Abstract: UNR1116 XP06116 XP6116
Contextual Info: Composite Transistors XP06116 XP6116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1116(UN1116) x 2 elements • Absolute Maximum Ratings 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter

UN1116

Abstract: UNR1116 XN01116 XN1116
Contextual Info: Composite Transistors XN01116 XN1116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1116(UN1116) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element

UN1116

Abstract: XP6116
Contextual Info: Composite Transistors XP6116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UN1116 x 2 elements • Absolute Maximum Ratings 1 : Emitter Tr1 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter Symbol Ratings

UN1116

Abstract: UN1216 UNR1116 UNR1216 XP04316 XP4316
Contextual Info: Composite Transistors XP04316 XP4316 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1216(UN1216) + UNR1116(UN1116) • Absolute Maximum Ratings Parameter

Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts

UN1116

Abstract: UNR1116 XN06116 XN6116
Contextual Info: Composite Transistors XN06116 XN6116 Silicon PNP epitaxial planer transistor Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Symbol

UN1114

Abstract: 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118
Contextual Info: Transistors with built-in Resistor / 111D/111E/111F/111H/111L Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 0.4 ● ● ● ● ● ● ● ● ● ● ●

UN1116

Abstract: UNR1116 XN04116 XN4116
Contextual Info: Composite Transistors XN04116 XN4116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings +0.1 +0.1 0 to 0.05 0.4±0.2 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

UN1116

Abstract: UNR1116 XN06116 XN6116
Contextual Info: Composite Transistors XN06116 XN6116 Silicon PNP epitaxial planer transistor ● 3 2 0.4±0.2 5° Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

UN1116

Abstract: UN1216 UNR1116 UNR1216 XN04316 XN4316
Contextual Info: Composite Transistors XN04316 XN4316 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) ● 3 2 0.4±0.2 5˚ Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

UN1116

Abstract: UN1216 XN4316
Contextual Info: Composite Transistors XN4316 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO

UN1116

Abstract: XN6116
Contextual Info: Composite Transistors XN6116 Silicon PNP epitaxial planer transistor Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Rating Collector to emitter voltage of element Collector current Ratings Unit VCBO –50 V –50 V –100 mA Total power dissipation

UNR1110

Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ

UN1116

Abstract: UN1216 UNR1116 UNR1216 XN04316 XN4316
Contextual Info: Composite Transistors XN04316 XN4316 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter 3 0.4±0.2 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2)

UN7000

Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
Contextual Info: Pakage No. Rb Ik Q ) Rst <kO) New S Type(D34) S-Mini Type(D5) M Type{D35) Mini Type(D12) (Pc =400m W , 600mW M 1W '2) (Pc = 200mW) (Pc=300m W ) (Pc — 150mW) PNP PNP NPN PNP MT1 Type(D37) (Pc =400m W , 600mW*1 ) Mini-Power MT2 Type(D38) (P c= 1W ) (Pc=125m W )