TS802C04 Search Results

Contextual Info: TS802C04 10A (40V / 10A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

TS802C04

Contextual Info: TS802C04 10A (40V / 10A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

diode ars1

Abstract: IR151
Contextual Info: TS802C04 ioa SCHOTTKY BARRIER DIODE • 4 $ £ : Features Surface m ount device. • 1& V f Low V f • wt 7A"J*>9X t r - * (=& i ' Connection Diagram Super high speed sw itchin g. • TV— *H± High reliability by planer design, : Applications High speed pow er s w itc h in g .

D1108

Abstract: TS802C04
Contextual Info: TS802C04 ioa g ± 'J K : Outline Drawings SCHOTTKY BARRIER DIODE »V «•5*“ 132 Si - 12. T „ [o jîf 0ÀJ 2.7 -S-W : Features • n m JEDEC Surface m o u n t device. e ìa j • ffiVp m m & m Low Vp Connection Diagram Super high speed s w itc h in g .

Contextual Info: TS802C04 10A (40V / 10A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

A461

Abstract: TS802C04
Contextual Info: TS802C04 ioa SCHOTTKY BARRIER DIODE • 4 $ £ : Features Surface m ount device. • 1& V f Low V f • wt 7A"J*>9X t r - * (=& i ' Connection Diagram Super high speed sw itchin g. • TV— *H± High reliability by planer design, : Applications High speed pow er s w itc h in g .

Contextual Info: http://www.fujisemi.com TS802C04R-TE24R FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Conditions Ratings Units Repetitive peak surge reverse voltage VRSM 48 V Repetitive peak reverse voltage

a461

Abstract: TS802C04
Contextual Info: TS802C04 ioa SCHOTTKY BARRIER DIODE • 4 $ £ : Features Surface m ount device. • 1& V f Low V f • wt 7A"J*>9X t r - * (=& i ' Connection Diagram Super high speed sw itchin g. • TV— *H± High reliability by planer design, : Applications High speed pow er s w itc h in g .

30S3

Abstract: AH20 T151 TS802C04 TS802
Contextual Info: TS802C04 ioa SCHOTTKY BARRIER DIODE I Features m Surface m ount device. • t e VF Low V f Connection Diagram Super high speed sw itch in g . • T V - * - * S 1± High reliability by planer d e s ig n , I Applications High speed pow er s w itc h in g .

Contextual Info: <§ TS802C04 10A Outline Drawing SC H O TTK Y B AR R IER DIODE O o <D @ 11 u 1.2 (0.05) 1 L0.8 0.03) 1.32(0.05) n :coo 0.4 (0 .02 ) 5.08 ( 0 . 20 ) • Features 0.18) 6 1.5 1 (0.06) 1 9.3 10.5 (0.41) 2.7 ( 0 . 11) Connection Diagram • Surface mount device

TS802C04

Contextual Info: TS802C04 10A (40V / 10A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

A461

Contextual Info: TS802C04 ioa '> a 'y h + —*'< l) T ÿ ' i J r — K SCHOTTKY BARRIER DIODE • J& S : : Features • mm Surface m ount device. • flSV F Low V f • T A 'y + 's V * I f - FA"'# $ ' C onnection D iagram Super high speed sw itchin g. • 7V —j — iiffilciSigff

TS802C04

Contextual Info: TS802C04 10A SCHOTTKY BARRIER d io d e • Outline Drawing I Features • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design I Applications • High speed power switching H Maximum Ratings & Characteristics

Contextual Info: TS802C04 10A (40V / 10A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

Contextual Info: DATE DRAWN JAN.-25-‘ 07 CHECKED JAN.-25-‘ 07 CHECKED JAN.-25-‘ 07 NAME APPROVED DWG.NO. T h i s m a t er i a l a n d t h e in f or m at i o n h e r ei n i s th e pr o pe r ty o f Fuji Electric D e v i c e Te c h n o lo g y C o . , L td . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

5n fast recovery diodes

Abstract: 30A 45V SCHOTTKY BARRIER RECTIFIER GENERAL SEMICONDUCTOR SMD DIODES smd diode 0.5A fast 600v LOW LOSS FAST RECOVERY DUAL DIODES
Contextual Info: CONTENTS I. II. III. IV. V. SMD RECTIFIER DIODE LIST. SMD PACKAGE OUTLINE DRAWINGS.

Contextual Info: M/m 5? 4 yJj.TJL' m — K / Rectifier Diodes JfelS» ir m 2 in one-package a Devieetype KS823C04 T a=2£C Therm«! rating Characteristics • *3 lFSM*a Tj and Tstg Max. Volts Max.mA Amps. r SMP t f f t A Maximum ratiog VftRM k ) * 1 Volts Amps. SMD KP823C04

ESAD81

Abstract: ESAC6 erb12 ESAD81-004 era-84 SCHOTTKY -004
Contextual Info: SCHOTTKY & GENERAL PURPOSE DIODES Schottky “Quick Reference” Selection Guide PACKAGE 45 VOLT Part Number lo A Pkg. M OUNT SC802-04 1 20 AXIAL ERA82-004 ERA83-004 E R A 8 1-004 ERB81 -004 ERB83-004 ERC81 -004 ERC81S-004 0.6 1 1 2 2 3 5 TO -220 ERC80-004

Contextual Info: Schottky-Barrier Diodes Dual package Ratings and characteristics Maximum rating Vrrm lo *1 TS802C06 TS802C09 TP802C04 TP802C06 TP802C09 ESAC82-004 ESAC82M-004 O II CO ^1 5.0 Mass Grams Fig. No. Irrm * 3 Max. mA Dimensions -40 t o +125 0.55 If=2.5A 5.0 0.6

ERG81-004

Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Contextual Info: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

Contextual Info: SCHOTTKY BARRIER DIODES 20 - 90Vo Its 20 - 30V O LT S Part Number •o A PAC KAG E SURFACE MOUNT M S flfttfe ERA82-004 *1 ERA83-004 *1 ERA81-004 *2 ERB83-004 *2 ERC81-004 *4 ERC81S-004 *4 ERC80-004 ERC62-004 ERC80M-004 ERC62M-004 AXIAL TO*220 TO-220F ,TQs22 F<5 ,