Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TPC8102 Search Results

    TPC8102 Datasheets (5)

    Toshiba
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TPC8102
    Toshiba Metal oxide P-channel FET, Enhancement Type w. diode Original PDF 479.82KB 7
    TPC8102
    Toshiba P-Channel MOSFET Original PDF 270.44KB 7
    TPC8102
    Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF 1.45MB 45
    TPC8102
    Toshiba Original PDF 44.05KB 9
    TPC8102
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    SF Impression Pixel

    TPC8102 Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components TPC8102(TE12L)

    Trans MOSFET P-CH Si 30V 6A 8-Pin 2-6J1A T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics TPC8102(TE12L) 2,275
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    Toshiba America Electronic Components TPC8102

    6 A, 30 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TPC8102 15,000
    • 1 $0.90
    • 10 $0.90
    • 100 $0.90
    • 1000 $0.90
    • 10000 $0.32
    Buy Now

    TPC8102 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TO SH IBA TPC8102 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-MOSVI T P C 8 1 02 LITHIUM ION BATTERY IN D U S T R IA L A P P L IC A T IO N S PORTABLE MACHINES AND TOOLS NOTE BOOK PC Low Drain-Source ON Resistance : R ß S (O N ) = 34 m H (Typ.)


    OCR Scan
    tpc8102 PDF

    Contextual Info: TOSHIBA TPC8102 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-MOSVI T P C 8 1 02 LITHIUM ION BATTERY IN D U S T R IA L A P P L IC A T IO N S PORTABLE MACHINES AND TOOLS NOTE BOOK PC • Low Drain-Source O N Resistance : R ß S (O N )= 34mO


    OCR Scan
    tpc8102--30v--24v PDF

    Contextual Info: TO SH IB A TPC8102 TOSHIBA FIELD EFFECT TRANSISTOR t p t f SILICON P CHANNEL MOS TYPE tt-MOSVI t 1 n ? LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC • Low Drain-Source ON Resistance : Rj)g (ON) —34m il (Typ.) •


    OCR Scan
    tpc8102--10//a--30v----24v PDF

    Contextual Info: TPC8102 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-MOSVI T P C 8 1 02 LITHIUM ION BATTERY IN D U S T R IA L A P P L IC A T IO N S PORTABLE MACHINES AND TOOLS NOTE BOOK PC Low Drain-Source ON Resistance : R d S (O N )= 34mO (Typ.)


    OCR Scan
    tpc810210/xa20ki2 PDF

    Contextual Info: TPC8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π−MOSVI TPC8102 Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Unit: mm Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 34 mΩ (typ.)


    Original
    tpc8102 PDF

    Contextual Info: T O SH IB A TPC8102 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL M O S TYPE ;r-MOSVI T P C 8 1 02 INDUSTRIAL APPLICATIONS U nit in mm LITHIUM ION BATTERY PORTABLE MACHINES A N D TOOLS NOTE BOOK PC • Low Drain-Source ON Resistance • High Forward Transfer Adm ittance: |Yfs| = 9S (Typ.)


    OCR Scan
    tpc8102--10/xa--24v PDF

    tpc8102

    Abstract: marking A3A
    Contextual Info: TOSHIBA TPC8102 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-MOSVI T P C 8 1 02 INDUSTRIAL APPLICATIONS LITHIUM ION BATTERY PORTABLE MACHINES AND TOOLS NOTE BOOK PC Low Drain-Source ON Resistance : Rd S (ON)= 34m il (Typ.) High Forward Transfer Adm ittance: |Yfs|= 9 S (Typ.)


    OCR Scan
    tpc810234milmarking a3a PDF

    Contextual Info: TO SHIBA TPC8102 TOSHIBA FIELD EFFECT TRANSISTOR LITHIUM ION BATTERY SILICON P CHANNEL MOS TYPE tt-MOSVI T P C 8 1 02 PORTABLE MACHINES AND TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC Low Drain-Source ON Resistance : RßS (ON)= 34m iî (Typ.)


    OCR Scan
    tpc8102--10//a--30v20kfl PDF

    TPC8102

    Contextual Info: TPC8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π−MOSVI TPC8102 Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Unit: mm l Small footprint due to small and thin package l Low drain−source ON resistance


    Original
    tpc8102 PDF

    TPC8102

    Contextual Info: TPC8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π •MOSVI TPC8102 Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Unit: mm l Small footprint due to small and thin package l Low drain−source ON resistance


    Original
    tpc8102 PDF

    tpc8102

    Contextual Info: TPC8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π−MOSVI TPC8102 Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Unit: mm Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 34 mΩ (typ.)


    Original
    tpc8102 PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original
    bce0017b2sk20562sk16032sk1603 datasheet+7toshiba "ultra high speed" diode 1atransistor 2sk16032sk3561 equivalent2sk2915 equivalent1045y2sk3569 equivalent2sk1078 PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original
    stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14stp60ne03l-10stp40nf03lstp80ne03l-06sts4dpf30lfqp60n06spb32n03lrfp60n06ssh6n80fqp50n10fsd6680stp55nf06 and its equivalentsfp70n03hgtg*n60a4dirf630 irf640 PDF

    Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS04-27231-5Ea ASSP For Power Management Applications General Purpose DC/DC Converter 2-ch DC/DC Converter IC with Overcurrent Protection MB39A104 • DESCRIPTION The MB39A104 is a 2-channel DC/DC converter IC using pulse width modulation (PWM), incorporating an


    Original
    ds04-27231-5eamb39a104 PDF

    MB3879

    Abstract: GRM39B68 RB053L-30 2N7002E C1608JB1H104K C3225JF1E106Z Si4435 TPC8102 4 bit decoder grm39
    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27708-2E ASSP for Power Supply Application for secondary battery DC/DC Converter IC for Parallel Charging of 3/4 cell Li-ion & NiMH Batteries MB3879 • DESCRIPTION The MB3879 is a DC/DC converter IC for parallel charging of 3/4 cell Li-ion & NiMH batteries, which uses the


    Original
    ds04-27708-2emb3879f0209grm39b68+8rb053l-302n7002ec1608jb1h104kc3225jf1e106zsi4435tpc81024 bit decodergrm39 PDF

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original
    bce0017fe-28831bce0017g2sk3567 equivalent+92sk3569 equivalenttpca*8023tk8a50d equivalent2sk20562sk3878 equivalenttpca80232sk941 equivalent2sk3561 equivalent2sk1603 PDF

    Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion


    Original
    PDF

    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27231-1E ASSP For Power Management Applications General Purpose DC/DC Converter 2-ch DC/DC Converter IC with Overcurrent Protection MB39A104 • DESCRIPTION The MB39A104 is a 2-channel DC/DC converter IC using pulse width modulation (PWM), incorporating an


    Original
    ds04-27231-1emb39a104f0206 PDF

    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27247-2E ASSP for Power Supply Applications Secondary battery DC/DC Converter IC of Synchronous Rectification for charging Li-ion battery MB39A119 • DESCRIPTION The MB39A119 is the N-ch MOS drive of the synchronous rectification type DC/DC converter IC using pulsewidth modulation (PWM) type that can charge Li-ion battery from 1 cell to 4 cells and suitable for down-conversion.


    Original
    ds04-27247-2emb39a119f0604 PDF

    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27708-2E ASSP for Power Supply Application for secondary battery DC/DC Converter IC for Parallel Charging of 3/4 cell Li-ion & NiMH Batteries MB3879 • DESCRIPTION The MB3879 is a DC/DC converter IC for parallel charging of 3/4 cell Li-ion & NiMH batteries, which uses the


    Original
    ds04-27708-2emb3879 PDF

    Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS04-27247-3E ASSP for Power Management Applications Rechargeable battery DC/DC Converter IC of Synchronous Rectification for charging Li-ion battery MB39A119 • DESCRIPTION The MB39A119 is the N-ch MOS drive of the synchronous rectification type DC/DC converter IC using pulsewidth modulation (PWM) type that can charge Li-ion battery from 1 cell to 4 cells and suitable for down-conversion.


    Original
    ds04-27247-3emb39a119 PDF

    Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS04-27708-2Ea ASSP for Power Supply Application for secondary battery DC/DC Converter IC for Parallel Charging of 3/4 cell Li-ion & NiMH Batteries MB3879 • DESCRIPTION The MB3879 is a DC/DC converter IC for parallel charging of 3/4 cell Li-ion & NiMH batteries, which uses the


    Original
    ds04-27708-2eamb3879 PDF

    GRM39B

    Abstract: MB3879 ac power adapter for notebook schematic 150w EA1 transistor Td024 GRM39B68 2N7002E C1608JB1H104K C3225JF1E106Z RB053L-30
    Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS04-27708-2Ea ASSP for Power Supply Application for secondary battery DC/DC Converter IC for Parallel Charging of 3/4 cell Li-ion & NiMH Batteries MB3879 • DESCRIPTION The MB3879 is a DC/DC converter IC for parallel charging of 3/4 cell Li-ion & NiMH batteries, which uses the


    Original
    ds04-27708-2eamb3879grm39bac power adapter for notebook schematic 150w+7ea1 transistortd024grm39b682n7002ec1608jb1h104kc3225jf1e106zrb053l-30 PDF

    RB0530L-30

    Abstract: C1608CH1H101J CDRH104R-150 FPT-24P-M03 MB39A104 TPC8102 VT100
    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27231-5E ASSP For Power Management Applications General Purpose DC/DC Converter 2-ch DC/DC Converter IC with Overcurrent Protection MB39A104 • DESCRIPTION The MB39A104 is a 2-channel DC/DC converter IC using pulse width modulation (PWM), incorporating an


    Original
    ds04-27231-5emb39a104f0608rb0530l-30+5c1608ch1h101jcdrh104r-150fpt-24p-m03tpc8102vt100 PDF