TN3444 Search Results

Contextual Info: TN3444 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)500nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.60

NSE180

Abstract: 2N4945 D40D8 NSDU02 nsd102 NSDU05
Contextual Info: NATL SEMICOND DISCRETE SEE » • bSG1130 GG377fl4 T ■ T-27-ÔI NPN Medium Power Transistors by Ascending Vceo Part No. Hfe a lc/Vce (V) NSE871 TN1711 • Min Max (mA/V) Vea (sat) (V) Max 50 40 300 25/20 500/10 1.5 150 TO-202 TO-237 Vceo lc/lb (mA)/(mA)

NSD102

Abstract: D42C5 040e5 NSE180 2N4945 NSE871 d42c2 TO-202 transistor NPN NSDU05 2N6714
Contextual Info: NATL SEMICOND DISCRETE 5SE D • bSG1130 Ci a377a4 T ■ T-27-0! NPN Medium Power Transistors by Ascending Vceo Part No. Hfe a lc /V ce Vceo (V) NSE871 TN1711 ’ Vce (sat) (V) Ic/lb M ax (mA)/(mA) Min M ax (m A/V) 50 40 300 25/20 500/10 1.5 150 Package

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK