TIP30 Search Results

DA 2688

Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
Contextual Info: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055

TIP29

Abstract: TIP30 transistors TIP30
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors TIP30 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -40V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat) = -0.7V(Max.)@IC= -1.0A ·Complement to Type TIP29

TIP3055 NPN power transistor

Abstract: TIP3055 NPN IC tl 072 TIP2955 TIP3055 transistor tip3055
Contextual Info: TIP3055 NPN SILICON POWER TRANSISTOR ● Designed for Complementary Use with the TIP2955 Series ● 90 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.

tip2955

Abstract: TIP3055
Contextual Info: Inchange Semiconductor Product Specification TIP2955 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type TIP3055 ・90 W at 25°C case temperature ・15 A continuous collector current APPLICATIONS ・Designed for general–purpose

Contextual Info: MCC TIP29,A,B,C NPN TIP30,A,B,C(PNP)
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • 1.0 Amp Complementary Silicon Power Transistors Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates

3055F

Abstract: TIP2955F_TIP3055F TIP2955F TIP3055F
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS TIP2955F PNP TIP3055F NPN TO- 3P Fully Isolated Plastic Package B C E Designed for General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS

OF TRANSISTOR AT 30B

Contextual Info: TIP30 Series TIP30/30A/30B/30C TIP30 Series(TIP30/30A/30B/30C) Medium Power Linear Switching Applications • Complementary to TIP29/29A/29B/29C TO-220 1 1.Base PNP Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: TIP29, TIP29A, TIP29B, TIP29C TIP30, TIP30A, TIP30B, TIP30C TIP29, 29 A, 29B, 29C TIP30, 30A, 30B, 30C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications DIM MIN MAX A B C 14.42 9,63 3.56 16.51

TP30C

Abstract: A 652 tip30c TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30B
Contextual Info: ÆÂMOS PEC COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS NPN TIP29 TIP29A TIP29B TÍP29C . designed for use in genera! purpose power amplifier and switching applications. FEATURES: * Coilector-Emitter Sustaining Voltage V~,v._r 40V Min - TIP29.TIP30

tip 420 transistor

Abstract: transistor tip 182 TIP30S5 TIP295S TIP2955 NPN power transistor transistor tip 420 TIP2955 TIP3055 sit transistor
Contextual Info: Æ & m o s p e c COMPLEMENTARY SILICON POWER TRANSISTORS PNP TIP2955 NPN TIP3055 .designed for use in general-purpose amplifier and switching applications FEATURES: * Power Dissipation - PD = 90W @ Tc = 25°C * DC Current Gain hFE = 20 - 100 @ lc = 4.0 A

Contextual Info: MOTOROLA Order this document by TIP3055/D SEMICONDUCTOR TECHNICAL DATA NPN TIP3055 Com plem entary Silicon Power Transistors PNP TIP2955 . . . designed for general-purpose switching and amplifier applications. • • • DC Current Gain — hpE = 2 0 -7 0 @ Iq = 4.0 Adc

transistor TIP3055 SOT-93

Contextual Info: TIP2955 PNP SILICON POWER TRANSISTOR ● Designed for Complementary Use with the TIP3055 Series ● 90 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.

c2688 L

Abstract: TIP 29 transistor texas instruments tip29 npn tip equivalent transistor c 243 TIP 34 pnp BD NPN transistors TLP298 1N914 TIP29A
Contextual Info: TYPES TIP29, TIP29A, TIP29B, TIP29C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWEFI-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP30, TIP30A, TIP30B, TIP30C • 30 W at 25°C Case Temperature • 1 A Rated Collector Current

TIP 2n3055

Abstract: transistor tip 5530 tip 147 TRANSISTOR equivalent TIP 122 transistor TIP 41 transistor transistor tip 3055 TIP 122 transistor APPLICATION NOTES transistor TIP 42 tip 127 TRANSISTOR equivalent TRANSISTOR tip 127
Contextual Info: T Y P E TIP3055 N-P-N SIN G LE-D IFFU SED M ESA SILICON POWER TRAN SISTO R FO R POWEiR A M P L IF IE R A N D H IG H -S P E E D SW IT C H IN G A P P L IC A T IO N S P L A S T IC -C A S E R E P L A C E M E N T F O R 2N3055 • 90 Watts at 25°C Case Temperature

DATASHEET OF TIP29

Abstract: tip29C OF TIP29 DATASHEET OF TRANSISTOR tip30 TIP29 transistor OF TRANSISTOR tip29 TIP29 Fairchild Semiconductor tip29
Contextual Info: TIP29 SERIES TIP29/29A/29B/29C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO-220 • Complementary to TIP30/30A/30B/30C ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Symbol : TIP29

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TIP29,A,B,C NPN TIP30,A,B,C(PNP) Features • 1.0 Amp Complementary Silicon Power Transistors Designed for use in general purpose amplifier and switching

Contextual Info: MCC TIP29,A,B,C NPN TIP30,A,B,C(PNP)
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • Mounting Torgue: 5 in-lbs Maximum Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates

TIP29

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# TIP29,A,B,C NPN TIP30,A,B,C(PNP) Features • • • 1.0 Amp Complementary Silicon Power Transistors Designed for use in general purpose amplifier and switching

I8212

Contextual Info: TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF PHILIPS INTERNATIONAL 5 bE D I 7 1 1 DflEb [IDM3 4 bb 7 G 0 « P H I N SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, for use in audio output stages and for general purpose amplifier and high-speed switching applications.

Contextual Info: TIP29, TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK • JULY 1968 - REVISED MARCH 1997 Designed for Complementary Use with the TIP30 Series T0-220 PACKAGE TOP VIEW • 30 W at 25°C Case Temperature

transistor tip 30c

Contextual Info: TIP30 SERIES TIP30/30A/30B/30C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS • C om plem ent to TIP 29/29A/29B/29C ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage Sym bol :T IP 3 0 Rating Unit - 40 V : TIP30A

morocco tip32c

Abstract: tip30c TIP30A TIP31A TIP31B TIP31C TIP32A TIP32B TIP29A TIP29B
Contextual Info: TIP29A/29B/29C TIP30A/30B/30C COMPLEMENTARY SILICON POWER TRANSISTORS • TIP31A, TIP31C, TIP32A AND TIP32C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP31A, TIP31B and TIP31C are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in

Contextual Info: TIP30F TIP30AF; TIP30BF T1P30CF; TIP30DF J SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, fo r use in audio output stages and for general purpose amplifier and high-speed switching applications.

Contextual Info: D E V E L O P M E N T DATA TIP3055T This data sheet contains advance information and specifications are subject to change without notice. SILICON EPITAXIAL-BASE POWER TRANSISTOR N-P-N transistor in a plastic envelope. With its p-n-p complement TIP295ST they are primarily intended