THC2484 Search Results

2n3904 2n3906

Abstract: bcy71 ALTERNATIVE 2N3904 geometry 2n3251a THC3251A
Contextual Info: BIPOLAR TRANSISTORS AND GEOMETRIES ELECTRICAL CHARACTERISTICS at TA = + 25°C *CBO 'c Max. v * BRJCBO Polarity (mA (V) Allegro Type V (V) Max. V Ib (V) (nA) (V) @ v rr 00 2N2222A THC2222A NPN 800 75 40 6.0 10 60 10 3.0 2N2484 THC2484 NPN 50 60 60 6.0

603 transistor npn

Abstract: 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906
Contextual Info: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) Device Allegro Type Type

Contextual Info: SPRAGUE/ 1 : SPRAGUE/SEMICOND 8514019 SPRAGUE! GROUP T3 D • SEMICONDS / ICS ÖS13Ö50 0003550 =5 T^âl^O 93D 0 3 5 5 8 P BIPOLAR TRANSISTOR CHIPS NPN Transistors T H ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO Device Type DC Current Gain

THC3251A

Abstract: pnp for 2n3019 312 2N3904 2N4033 2N3906 DS 2N3117 2n5401 2n3904 bcy71 ALTERNATIVE 2N2222A 2N2369
Contextual Info: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) — — Device Allegro

THC697

Abstract: THC699 THC718 THC760 THC760A THC915 THC916 THC917
Contextual Info: ALL E GR O M I C R O S Y S T E M S INC 8 5 1 4 0 1 9 S P R A GU E. “13 5 • 0504330 0003550 S E M I C O N D S / ICS 3 ■ AL 6R l'Alto 93 D 0 3 5 5 8 P BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘TH ’ Device Types E LE C T R IC A L CH ARACTERISTICS at TA = 25°C

SL 100 NPN Transistor

Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
Contextual Info: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE

THC697

Abstract: THC699 THC718 THC760 THC760A THC915 THC916 THC917 THC918 THC929
Contextual Info: BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘TH ’ Device Types ELECTRICAL CHARACTERISTICS al TA = 25°C DC Current Gain 'cB O Device Type Max. mA THC697 THC699 THC718 THC760 THC760A THC915 THC916 THC917 THC918 THC929 THC929A THC93Û THC930A THC956 THC981

2SC1844P

Abstract: PA6014b SO80G 2SC2784F 2SC100 LOW-POWER SILICON NPN 2sc1844-f 2sc1844 2SC1844F
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 BFR16 MPS2484 2N5961 2N6224 TP5961 TP6224 2S0763 2S0974 BC141-25 BC141-25 t"AbU;J4-10 2N2462 2N2466 BC431-1S 2SC1008 2SC1008 2SC1008 BC487B BC487B18 BC487B5 ~¥~J~lU 25 30 BSX63-1S BSX63-1S EN870 MMCM2484