TA259 Search Results

ISO14443

Abstract: TA259 CRX14 ISO14443-B SR176 SRIX512 13.56MHz Reader antenna designing antenna crx14
Contextual Info: TA259 TECHNICAL ARTICLE Designing Low Cost Large Volume Close Coupling Contactless Systems with ST Contactless Memories and Coupler c u d Christophe Mani EEPROM and Serial NVM Division, STMicroelectronics, Rousset, France The ability to identify, track, and update the information on objects: this is a facility that is now in

TA259

Abstract: SRT512 how vending machine process CRX14 ISO14443 ISO14443-B SR176 SRI512 bus ticketing machine antenna crx14
Contextual Info: TA259 Technical article Designing low-cost large-volume close-coupling contactless systems with ST contactless memories and coupler The ability to identify, track, and update the information on objects: this is a facility that is now in ever increasing demand. Radio frequency RF identification technology was

TA259

Abstract: ISO14443 SO16N Package Data information tags how vending machine work SRIX512 CRX14 ISO14443-B SR176 ISO-14443
Contextual Info: TA259 TECHNICAL ARTICLE Designing Low Cost Large Volume Close Coupling Contactless Systems with ST Contactless Memories and Coupler Christophe Mani EEPROM and Serial NVM Division, STMicroelectronics, Rousset, France The ability to identify, track, and update the information on objects: this is a facility that is now in

cs1m

Contextual Info: Ordering number:ENN6467 NPN Triple Diffused Planar Silicon Transistor 2SC5639 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).

BA7T

Abstract: tamagawa C259C GET-BC-0004 bc 8122 LDS100 high temperature reverse bias
Contextual Info: F RO M 2002Í S B <*> 1 9 : 2 9 / f B I 9 : 2 3 / X » S ^ E 5 0 2 4 Í 4 6 S 2 IMEC G E T —B C — 0 0 0 4 1/20 NEC Corporation T am agaw a P la n t 1763, S h im o m im ab e, N akahara-iku Kawasaki , Kanagawa 211-8661> Q u a l i f i c a t ion Test Report

FTS2005

Abstract: S2005
Contextual Info: Ordering number:ENN6347 N-Channel Silicon MOSFET FTS2005 Liquid Crystal Display Backlight Drive Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Mounting height 1.1mm. unit:mm 2166 [FTS2005] 0.65 0.425 5 4.5 6.4

40664 SCR

Abstract: CD4001AD ICAN-6267 scr 40430 CD4014AD RCA 40669 RCA 17853 siemens transistor manual CD2500E 40555 SCR
Contextual Info: VtC/1 Solid State DATABOOK Series C O S /M O S Digital Integrated Circuits This D A T A B O O K contains complete data and related appli­ cation notes on COS/M OS digital integrated circuits presently available from R C A Solid State Division as standard products.

Contextual Info: SMA4201 Ordering number : ENN8408 SMA4201 Si Monolithic Linear IC High Frequency Oscillator IC for Laser Diode Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Supply Voltage VCC 6.0 V Circuit Current 30 mA Allowable Power Dissipation

TA-2595

Abstract: 2sd2634
Contextual Info: Ordering number:ENN6474 NPN Triple Diffused Planar Silicon Transistor 2SD2634 Color TV Horizontal Deflection Output Applications Features Package Dimensions • High speed. · High breakdown voltage VCBO=1500V . · High reliability (Adoption of HVP process).

2N3670

Abstract: scr 2n3668 scr silicon controlled rectifiers 2N3668-2N3670 scr 2N3669 2N3669 2N4103 2N3688 scr RCA 2N3670 ta2621
Contextual Info: fi E SOLI» STATE "Üb 3 8 7 5 0 8 1 G E S O L ID S T A T E Silicon Controlled Rectifiers- dF 01E | 3 fl7 5 []fll D 01 7 k f l 4 17684 2N3668-2N3670, 2N4103 File Num ber 12.5-A Silicon Controlled Rectifiers 116 TERMINAL DESIGNATIONS For Low-Cost Power-Control and Power-Switching

tic 1260 scr texas

Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Contextual Info: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.

TC40H

Abstract: TC40H375
Contextual Info: TO SHIBA INTEGRATED CIRCUIT TECHNICAL DATA TC40H375P/F C 2M O S DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC40H 375 4 - B I T B IS T A B LE LATCH The TC40H375 is a 4-bit latch having ENABLE input terminal common in two circuits. When ENABLE input is at "H" level, DATA input

2SA2014

Abstract: 2SC5567 2SA20 IT00171
Contextual Info: Ordering number:ENN6321 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2014/2SC5567 DC/DC Converter Applications Applications Package Dimensions • Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2163 Features [2SA2014/2SC5567] · Adoption of MBIT processes.

scr 2n3668

Abstract: scr 2N3669 2N3688 scr RCA 2N3670 2N4103 2N3669 RCA 2N3669 2N3668 2N3668-2N3670 2N3670
Contextual Info: 2N3668-2N3670, 2N4103 File Num ber 116 TERMINAL DESIGNATIONS 12.5-A Silicon Controlled Rectifiers For Low-Cost Power-Control and Power-Switching Applications Features: • ■ ■ ■ ■ Low switching losses High dl/dt and dv/dt capabilities Low leakage currents, both forward and reverse

Contextual Info: Ordering number:ENN6465 NPN Triple Diffused Planar Silicon Transistor 2SC5637 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).

TA-2593

Contextual Info: Ordering number:ENN6466 NPN Triple Diffused Planar Silicon Transistor 2SC5638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).

2SC5638

Abstract: ENN6466
Contextual Info: Ordering number:ENN6466 NPN Triple Diffused Planar Silicon Transistor 2SC5638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).

FTS2005

Abstract: S2005
Contextual Info: Ordering number:ENN6347 N-Channel Silicon MOSFET FTS2005 Liquid Crystal Display Backlight Drive Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Mounting height 1.1mm. unit:mm 2166 [FTS2005] 0.65 0.425 5 4.5 6.4

SMA4201

Contextual Info: SMA4201 Ordering number : ENN8408 SMA4201 Si Monolithic Linear IC High Frequency Oscillator IC for Laser Diode Specifications Absolute Maximum Ratings at Ta=25°C Parameter Supply Voltage Symbol Conditions Ratings VCC ICC Circuit Current Allowable Power Dissipation

2SA1025

Abstract: 2SC23 2SC2547 2SA1031 2SA1082 2SC2396 2SC2543 2SC2544 2SC2545 2SC2546
Contextual Info: HITACHI 2SC2396, 2SC2543, 2SC2544 SILICON NPN EPITAXIAL LOW FREQ UEN CY AMPLIFIER Compltsmonlary pair with 2SA1025. 2SA1031 ar>rf 2SA1082 I. fcfliilttr IB. ^ , "T l~^ _ ! C« ic<w A - — =m Hi« V mi mmj (JE D E C TO-92) A BSO LUTE MAXIMUM RATINGS (Ta-25°C>

2n3773 power Amplifier circuit diagrams

Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Contextual Info: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete