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    T143R Search Results

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    T143R Price and Stock

    SEI Stackpole Electronics Inc

    SEI Stackpole Electronics Inc RNCF1206TKT143R

    B32678G1286K - Tape and Reel (Alt: RNCF1206TKT143R)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RNCF1206TKT143R Tape & Reel 1,000
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    • 1000 $0.77
    • 10000 $0.68
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    SEI Stackpole Electronics Inc RNCF2512BTT143R

    SMD Chip Resistor, 143 ohm, ? 0.1%, 750 mW, 2512 [6432 Metric], Thin Film, Precision - Tape and Reel (Alt: RNCF2512BTT143R)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RNCF2512BTT143R Tape & Reel 15 Weeks 4,000
    • 1 -
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    • 1000 -
    • 10000 $0.34
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    SEI Stackpole Electronics Inc RMCA0805FT143R

    SMD Chip Resistor, 143 ohm, ? 1%, 125 mW, 0805 [2012 Metric], Thick Film, Anti-Sulfur - Tape and Reel (Alt: RMCA0805FT143R)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RMCA0805FT143R Tape & Reel 18 Weeks 5,000
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    • 10000 $0.01
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    SEI Stackpole Electronics Inc RMCP1210FT143R

    SMD Chip Resistor, 143 ohm, ? 1%, 660 mW, 1210 [3225 Metric], Thick Film, High Power, General Purpose - Tape and Reel (Alt: RMCP1210FT143R)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RMCP1210FT143R Tape & Reel 18 Weeks 5,000
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    • 100 -
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    • 10000 $0.02
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    SEI Stackpole Electronics Inc RMCA1206FT143R-UP

    SMD Chip Resistor, 143 ohm, ? 1%, 750 mW, 1206 [3216 Metric], Thick Film, Anti-Sulfur, Ultra-High Power - Tape and Reel (Alt: RMCA1206FT143R-UP)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RMCA1206FT143R-UP Tape & Reel 18 Weeks 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.03
    Buy Now

    T143R Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BF990AR

    Contextual Info: • t.bS3T31 0G24737 TU' B A P X BF990AR b7E T> N AMER PHILIPS/DISCRETE SILICON N-CHANNEL DUAL GATE MOS-FET D epletion ty p e fie ld -e ffe c t tra n sisto r in a plastic SO T143R m ic ro m in ia tu re envelope w ith source and substrate interconnected, intended fo r U HF a p p lications, such as U H F television tuners and


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    bs3t31q024737bf990arot143r PDF

    K 3053 TRANSISTOR

    Abstract: TRANSISTOR m29 BF909 marking code dual gate mos BF909R marking 550 sot143 marking M29 PRs transistor BF909,235
    Contextual Info: Philips Semiconductors Product specification N-ohannel dual gate MOS-FETs FEATURES • Specially designed for use at 5 V supply voltage BF909; BF909R transistor consists of an amplifier M O S-FET with source and substrate interconnected and an internal bias circuit to


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    bf909bf909rmbc845ot143r+7k 3053 transistortransistor m29marking code dual gate mosmarking 550 sot143marking m29prs transistorbf909,235 PDF

    dual-gate

    Contextual Info: DISC RETE S E M IC O N D U C TO R S ATA S & flE E T BF 9 0 9 A; B F 9 0 9 A R Dual-gate MOS-FETs P relim inary specification File under D iscrete S em iconductors, SC 07 Philips Semiconductors 1998 M ar 06 PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification


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    dual-gate PDF

    bfg67

    Contextual Info: DISCRETE SEMICONDUCTORS BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Product specification Supersedes data of September 1995 Philips Sem iconductors 1998 Oct 02 PHILIPS Philips Semiconductors Product specification NPN 8 GHz wideband transistors


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    bfg67bfg67/xbfg67/xrsca60 PDF

    so 54 t

    Abstract: BF547B BF751 T143R BFG65
    Contextual Info: 54 RF/Microwave Devices RF W ideband Transistors Ratings V ic * Type No. BF547 B F547W BF689K BF747 BF747W BF748 BF751 BF763 B F G 16 A B F G 17 A B FG 25 A /X BFG31 BFG 32 B FG 33 BFG33/X BFG33/XR B FG 34 BFG35 BFG 55 B FG 65 B FG 67 B FG67/X BFG67/XR BFG90A


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    bf547f547wbf689kbf747+10bf747wbf748bf751bf763bfg31bfg33/xso 54 tbf547bt143rbfg65 PDF

    BF904

    Contextual Info: Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904; BF904R and substrate interconnected and an internal bias circuit to ensure good cross-m odulation perform ance during AGC. FEATURES • S pecially designed fo r use at 5 V supply voltage


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    bf904bf904r-302a-302b+2ot143bot143r PDF

    80500 TRANSISTOR

    Abstract: mje 2055 transistor lr 3303 KF 80500 LB 11911 0103 MA WJ 73 KF 80-500 NE68719 049E-9 transistor k 3562
    Contextual Info: NE687 SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz 4 ! • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fTof 13 GHz 18 SO T 343 STYLE 19 (3 PIN ULTRA SUPER MINI MOLD) 30 (SOT 323 STYLE)


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    ne687ne68718-t1ne68719-t1ne68730-t1+14ne68733-t1e68739-t1ne68739r-t124-hour80500 transistormje 2055transistor lr 3303kf 80500lb 119110103 ma wj 73kf 80-500ne68719049e-9transistor k 3562 PDF

    DIODE marking S4 69

    Contextual Info: DISCRETE SEMICONDUCTORS BF1108; BF1108R Silicon RF-switches Preliminary specification Philips Sem iconductors 1999 May 17 PHILIPS Philips Semiconductors Preliminary specification Silicon RF-switches BF1108; BF1108R FEATURES • S pecially designed fo r low loss R F-sw itching


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    bf1108bf1108rt143bsca64+2125004/00/01/pp12diode marking s4 69 PDF

    BF750

    Abstract: sot143r transistor
    Contextual Info: 1 P h H ip ^ S em lc o n d u c to r^ ^ ^ ^ H 7110flSb QO bflbbO MD? 1 P H I N Product specification NPN 7 GHz wideband transistor FEATURES BF750 PINNING PIN • High power gain • Low noise figure 3 DESCRIPTION 4 Code: V32 • Gold metallization ensures excellent reliability.


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    711002bbf750ot143rmsb035+1sot143r transistor PDF

    BF749

    Abstract: UHF transistor GHz 4 pin dual-emitter
    Contextual Info: ^£>53^31 0 0 2 4 1 ^ 2 Philips Sem iconductors T50 H A P X N AflER P H I L I P S / D I S C R E T E Product specification b7E ]>' NPN 5 GHz wideband transistor FEATURES BF749 PINNING • High power gain • Low noise figure • Gold metallization ensures excellent reliability.


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    bf749ot143ruhf transistor ghz4 pin dual-emitter PDF

    dual-gate

    Abstract: rg168 str 1096 BF1101WR
    Contextual Info: DISCRETE SEMICONDUCTORS BF1101 ; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 Philips Sem iconductors 1999 May 14 PHILIPS Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR


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    bf1101bf1101rbf1101wrmsb035+5sca64125004/00/02/pp16dual-gaterg168str 1096 PDF