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TT Electronics Resistors IBT1/4-3R3-5% Carbon Composite Resistor - 3.3 Ohm ±5% - 1/4W - EIA RS-172 - 6.3mm x 2.4mm Dia. - Axial Through Hole
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	IBT1/4-3R3-5%		99			1 $0.08 10 $0.08 100 $0.08 1000 $0.08 10000 $0.06	Buy Now
SEI Stackpole Electronics Inc RMCF1206FT143R Thick Film Resistor - 143 ohm ±1% - 0.25W - SMD 1206 - Tape&Reel
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	RMCF1206FT143R					1 - 10 - 100 - 1000 - 10000 $0.01	Buy Now
SEI Stackpole Electronics Inc RMCF0201FT143R Thick Film Chip Resistor - 143 ohm ±1% - 0.05W - SMD 0201 - Tape&Reel
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	RMCF0201FT143R					1 - 10 - 100 - 1000 - 10000 $0.00	Buy Now
SEI Stackpole Electronics Inc RMCF0402FT143R Thick Film Resistor - 143 ohm ±1% - 0.063W - SMD 0402 - Tape&Reel
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	RMCF0402FT143R					1 - 10 - 100 - 1000 - 10000 $0.00	Buy Now
SEI Stackpole Electronics Inc RMCF0805FT143R Thick Film Resistor - 143 ohm ±1% - 0.125W - SMD 0805 - Tape&Reel
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	RMCF0805FT143R					1 - 10 - 100 - 1000 - 10000 $0.00	Buy Now

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T143R Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BF990AR Contextual Info: • t.bS3T31 0G24737 TU' B A P X BF990AR b7E T> N AMER PHILIPS/DISCRETE SILICON N-CHANNEL DUAL GATE MOS-FET D epletion ty p e fie ld -e ffe c t tra n sisto r in a plastic SO T143R m ic ro m in ia tu re envelope w ith source and substrate interconnected, intended fo r U HF a p p lications, such as U H F television tuners and	OCR Scan	bs3t31 q024737 bf990ar ot143r	PDF
K 3053 TRANSISTOR Abstract: TRANSISTOR m29 BF909 marking code dual gate mos BF909R marking 550 sot143 marking M29 PRs transistor BF909,235 Contextual Info: Philips Semiconductors Product specification N-ohannel dual gate MOS-FETs FEATURES • Specially designed for use at 5 V supply voltage BF909; BF909R transistor consists of an amplifier M O S-FET with source and substrate interconnected and an internal bias circuit to	OCR Scan	bf909 bf909r mbc845 ot143r +7k 3053 transistor transistor m29 marking code dual gate mos marking 550 sot143 marking m29 prs transistor bf909,235	PDF
dual-gate Contextual Info: DISC RETE S E M IC O N D U C TO R S ATA S & flE E T BF 9 0 9 A; B F 9 0 9 A R Dual-gate MOS-FETs P relim inary specification File under D iscrete S em iconductors, SC 07 Philips Semiconductors 1998 M ar 06 PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification	OCR Scan	dual-gate	PDF
bfg67 Contextual Info: DISCRETE SEMICONDUCTORS BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Product specification Supersedes data of September 1995 Philips Sem iconductors 1998 Oct 02 PHILIPS Philips Semiconductors Product specification NPN 8 GHz wideband transistors	OCR Scan	bfg67 bfg67/x bfg67/xr sca60	PDF
so 54 t Abstract: BF547B BF751 T143R BFG65 Contextual Info: 54 RF/Microwave Devices RF W ideband Transistors Ratings V ic * Type No. BF547 B F547W BF689K BF747 BF747W BF748 BF751 BF763 B F G 16 A B F G 17 A B FG 25 A /X BFG31 BFG 32 B FG 33 BFG33/X BFG33/XR B FG 34 BFG35 BFG 55 B FG 65 B FG 67 B FG67/X BFG67/XR BFG90A	OCR Scan	bf547 f547w bf689k bf747 +10bf747w bf748 bf751 bf763 bfg31 bfg33/x so 54 t bf547b t143r bfg65	PDF
BF904 Contextual Info: Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904; BF904R and substrate interconnected and an internal bias circuit to ensure good cross-m odulation perform ance during AGC. FEATURES • S pecially designed fo r use at 5 V supply voltage	OCR Scan	bf904 bf904r -302a -302b +2ot143b ot143r	PDF
80500 TRANSISTOR Abstract: mje 2055 transistor lr 3303 KF 80500 LB 11911 0103 MA WJ 73 KF 80-500 NE68719 049E-9 transistor k 3562 Contextual Info: NE687 SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz 4 ! • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fTof 13 GHz 18 SO T 343 STYLE 19 (3 PIN ULTRA SUPER MINI MOLD) 30 (SOT 323 STYLE)	OCR Scan	ne687 ne68718-t1 ne68719-t1 ne68730-t1 +14ne68733-t1 e68739-t1 ne68739r-t1 24-hour 80500 transistor mje 2055 transistor lr 3303 kf 80500 lb 11911 0103 ma wj 73 kf 80-500 ne68719 049e-9 transistor k 3562	PDF
DIODE marking S4 69 Contextual Info: DISCRETE SEMICONDUCTORS BF1108; BF1108R Silicon RF-switches Preliminary specification Philips Sem iconductors 1999 May 17 PHILIPS Philips Semiconductors Preliminary specification Silicon RF-switches BF1108; BF1108R FEATURES • S pecially designed fo r low loss R F-sw itching	OCR Scan	bf1108 bf1108r t143b sca64 +2125004/00/01/pp12 diode marking s4 69	PDF
BF750 Abstract: sot143r transistor Contextual Info: 1 P h H ip ^ S em lc o n d u c to r^ ^ ^ ^ H 7110flSb QO bflbbO MD? 1 P H I N Product specification NPN 7 GHz wideband transistor FEATURES BF750 PINNING PIN • High power gain • Low noise figure 3 DESCRIPTION 4 Code: V32 • Gold metallization ensures excellent reliability.	OCR Scan	711002b bf750 ot143r msb035 +1sot143r transistor	PDF
BF749 Abstract: UHF transistor GHz 4 pin dual-emitter Contextual Info: ^£>53^31 0 0 2 4 1 ^ 2 Philips Sem iconductors T50 H A P X N AflER P H I L I P S / D I S C R E T E Product specification b7E ]>' NPN 5 GHz wideband transistor FEATURES BF749 PINNING • High power gain • Low noise figure • Gold metallization ensures excellent reliability.	OCR Scan	bf749 ot143r uhf transistor ghz 4 pin dual-emitter	PDF
dual-gate Abstract: rg168 str 1096 BF1101WR Contextual Info: DISCRETE SEMICONDUCTORS BF1101 ; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 Philips Sem iconductors 1999 May 14 PHILIPS Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR	OCR Scan	bf1101 bf1101r bf1101wr msb035 +5sca64 125004/00/02/pp16 dual-gate rg168 str 1096	PDF